초록 ▼

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: forming a first insulating film over a semiconductor substrate; forming a second insulating film over the first insulating film; forming a first opening that reaches the first insulating film in the se

What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: forming a first insulating film over a semiconductor substrate; forming a second insulating film over the first insulating film; forming a first opening that reaches the first insulating film in the second insulating film by irradiating the second insulating film with laser light and a second opening that reaches the semiconductor substrate in the first insulating film and the second insulating film by irradiating the first insulating film and the second insulating film with laser light; and forming a gate electrode through the first opening and an electrode through the second opening by a droplet discharging method or a printing method, wherein the gate electrode is in contact with the first insulating film, and wherein the electrode is in contact with the semiconductor substrate. 2. A method according to claim 1, wherein a diameter of each of the first opening and the second opening is 3 nm or more and 2000 nm or less. 3. A method according to claim 1, wherein the first opening and the second opening are a columnar shape, an L shape, a U shape, or a shape drawing an arc. 4. A method according to claim 1, wherein the first opening and the second opening are formed by moving a focal position of the laser light to an X direction, a Y direction, or a Z direction. 5. A method according to claim 1, wherein the laser light is oscillated with a pulse width of the laser light being 1 femtosecond or more and 10 picoseconds or less. 6. A method according to claim 1, wherein the laser light has a fundamental wave emitted from a laser oscillator of which laser repetition frequency is 10 MHz or more. 7. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; forming a first insulating film over the semiconductor layer; forming a second insulating film over the first insulating film; forming a first opening that reaches the first insulating film in the second insulating film by irradiating the second insulating film with laser light and a second opening that reaches the semiconductor layer in the first insulating film and the second insulating film by irradiating the first insulating film and the second insulating film with laser light; and forming a gate electrode through the first opening and an electrode through the second opening by a droplet discharging method or a printing method, wherein the gate electrode is in contact with the first insulating film, and wherein the electrode is in contact with the semiconductor layer. 8. A method according to claim 7, wherein a diameter of each of the first opening and the second opening is 3 nm or more and 2000 nm or less. 9. A method according to claim 7, wherein the first opening and the second opening, are a columnar shape, an L shape, a U shape, or a shape drawing an arc. 10. A method according to claim 7, wherein the first opening and the second opening are formed by moving a focal position of the laser light to an X direction, a Y direction, or a Z direction. 11. A method according to claim 7, wherein the laser light is oscillated with a pulse width of the laser light being 1 femtosecond or more and 10 picoseconds or less. 12. A method according to claim 7, wherein the laser light has a fundamental wave emitted from a laser oscillator of which laser repetition frequency is 10 MHz or more.