초록 ▼

This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication. A power semiconductor, the semiconductor comprising: a power device, said power device ha

This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication. A power semiconductor, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device; and wherein said power semiconductor includes an electrically insulating layer between said semiconductor substrate and said power device, said electrically insulating layer having a thickness of at least 5 μm.

대표청구항 ▼

The invention claimed is: 1. A power semiconductor, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device, wherein said power semiconductor incl

The invention claimed is: 1. A power semiconductor, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device, wherein said power semiconductor includes multiple electrically insulating layers between said semiconductor substrate and said power device, said electrically insulating layers having a combined thickness of at least 5 μm, wherein said insulating layers are at least partially defined by a plurality of interleaved metallization layers such that layers of each adjacent pair of said insulating layers are partially isolated from one another vertically by a corresponding interleaved metallization layer, wherein the plurality of metallization layers have metal fins extending into a plurality of said electrical insulating layers and have a via connection between layers of each adjacent pair of the metallization layers and between one of said electrical contact regions of said power device and the metallization layer adjacent thereto; and whereby said metallization layers having said metal fins and via connections form a heatsink extending from the one of said electrical contact regions of said power device through said plurality of metallization layers all the way to the last electrically insulating layer towards said semiconductor substrate to enhance thermal conduction from said power device to said semiconductor substrate. 2. A power semiconductor as claimed in claim 1 wherein said electrically insulating layers have a combined thickness of at least 10 μm. 3. A power semiconductor as claimed in claim 1 wherein said power device is fabricated on a surface of a semiconductor, and wherein said semiconductor surface faces said semiconductor substrate. 4. A power semiconductor as claimed in claim 1 wherein said semiconductor substrate is wafer-bonded to the insulating layer directly adjacent thereto. 5. A power semiconductor as claimed in claim 1 wherein said power device comprises a lateral device. 6. A power semiconductor as claimed in claim 5 including contact metallization for making electrical contact to said first and second electrical contact regions, and wherein at least a portion of said contact metallization extends substantially completely vertically through said lateral device from a surface of said device facing said substrate to an opposite surface of said device. 7. A power semiconductor as claimed in claim 1 wherein said power device comprises a vertical device. 8. A power semiconductor as claimed in claim 1 further comprising a further electrically insulating layer over said power device on an opposite side of said power device to said multiple insulating layers, said further electrically insulating layer being comprised of a buried oxide layer. 9. A vertical power semiconductor rated from 50V to 1.2 kV, the semiconductor comprising: a layer of silicon within which a power device is formed, said power device having electrical contact regions and a drift region therebetween; a silicon substrate; a plurality of insulating layers between said layer of silicon including said power device and said semiconductor substrate, said plurality of insulating layers having a combined thickness of at least 5 μm; and wherein said insulating layers are at least partially defined by one or more interleaved metallization layers such that layers of each adjacent pair of said insulating layers are partially isolated from one another vertically by a corresponding interleaved metallization layer; and wherein, where a plurality of metallization layers are provided, said plurality of metallization layers have a via connection between layers of each adjacent pair of the metallization layers; and wherein said power device is inverted such that said electrical contact regions of said device are contacted by via connections of the metallization layer adjacent thereto for making external electrical connections to said device from surfaces facing towards said silicon substrate. 10. A vertical power semiconductor as claimed in claim 9 further comprising a further insulating layer over said layer of silicon including said power device and on an opposite side of said power device to said multiple insulating layers; and wherein said further insulating layer is substantially planar with substantially flat and parallel upper and lower surfaces. 11. A vertical power semiconductor as claimed in claim 10 wherein said silicon substrate is wafer bonded to the insulating layer adjacent thereto. 12. A vertical power semiconductor as claimed in claim 9 wherein said insulating layers have substantially flat and parallel upper and lower surfaces. 13. A lateral semiconductor-on-insulator device comprising: a semiconductor substrate; multiple insulating layers on said semiconductor substrate, said insulating layers having a combined thickness of at least 5 μm; and a lateral semiconductor device on said insulating layers, said lateral semiconductor device having: a first region of a first conductivity type; a second region of a second conductivity type laterally spaced apart from said first region; a drift region extending in a lateral direction between said first region and said second region; and at least one electrode connection to one of said first and second regions made to a surface of said device adjacent said insulating layer, wherein said insulating layers are at least partially defined by a plurality of interleaved metallization layers such that layers of each adjacent pair of said insulation layers are partially isolated from one another vertically by a corresponding interleaved metallization layer; wherein the plurality of metallization layers have metal fins extending into a plurality of said electrical insulating layers and have a via connection between layers of each adjacent pair of the metallization layers and a further via connection forming at least part of said at least one electrode connection; and whereby said metallization layers having said metal fins and via connections form a heatsink extending from said at least one of said first and second regions of said lateral semiconductor device through said plurality of metallization layers all the way to the last electrically insulating layer towards said semiconductor substrate to enhance thermal conduction from said lateral semiconductor device to said semiconductor substrate. 14. A lateral semiconductor-on-insulator device as claimed in claim 13 wherein said drift region comprises interdigitated first and second zones. 15. A power semiconductor as claimed in claim 8 further comprising a protective dielectric layer over said second insulating layer. 16. A vertical power semiconductor rated from 50V to 1.2 kv, the semiconductor comprising: a power device, said power device having first and second electrical contact regions and a drift region extending therebetween; and a semiconductor substrate mounting said device, wherein said vertical power semiconductor includes multiple electrically insulating layers between said semiconductor substrate and said power device, said insulating layers are at least partially defined by one or more interleaved metallization layers such that layers of each adjacent pair of said insulation layers are partially isolated from one another vertically by a corresponding interleaved metallization layer, said insulating and metallization layers having a combined thickness of at least 5 μm: and wherein said one or more interleaved metallization layers have a via connection between one of said electrical contact regions of said power device and the metallization layer adjacent thereto and, where a plurality of metallization layers are provided, said plurality of metallization layers have a via connection between layers of each adjacent pair of the metallization layers; and wherein said vertical power semiconductor includes a conducting layer disposed between said semiconductor substrate and said plurality of electrically insulating layers, said conducting layer substantially isolating the plurality of electrically insulating layers vertically from the semiconductor substrate, the conducting layer having a via connection to the interleaved metallization layer adjacent thereto; and wherein said semiconductor substrate is wafer-bonded to said conducting layer; and wherein a first high power electrical contact to said device is at an underside of said device, on an opposite side of said device to said multiple electrically insulating layers, and a second high power electrical contact is made by means of said one or more metallization layers and said conducting layer and said via connections. 17. A vertical power semiconductor, the semiconductor comprising: a layer of silicon within which a power device is formed; a silicon substrate; a first insulating layer between said layer of silicon including said power device and said semiconductor substrate; a second insulating layer over said layer of silicon including said power device and on an opposite side of said power device to said first layer; wherein said second insulating layer is comprised of a buried oxide layer; and a third protective insulating layer over said second insulating layer, said third protective insulating layer being comprised of a different material from said second insulating layer; wherein said second and third insulating layers have at least one electrical connection etched through said second and third layers to make contact with said device.