초록 ▼

Embodiments of the invention provide a device with a reverse-tapered gate electrode and a gate dielectric layer with a length close to that of the gate length. In an embodiment, this may be done by altering portions of a blanket dielectric layer with one or more angled ion implants, then removing th

Embodiments of the invention provide a device with a reverse-tapered gate electrode and a gate dielectric layer with a length close to that of the gate length. In an embodiment, this may be done by altering portions of a blanket dielectric layer with one or more angled ion implants, then removing the altered portions of the blanket dielectric layer.

대표청구항 ▼

We claim: 1. A method, comprising: forming a blanket dielectric layer on a substrate; forming a reverse-tapered gate electrode on the blanket dielectric layer, an exposed portion of the blanket dielectric layer being adjacent side walls of the gate electrode; implanting ions into the exposed portio

We claim: 1. A method, comprising: forming a blanket dielectric layer on a substrate; forming a reverse-tapered gate electrode on the blanket dielectric layer, an exposed portion of the blanket dielectric layer being adjacent side walls of the gate electrode; implanting ions into the exposed portion of the blanket dielectric layer, the ions being implanted at an angle between about that of a first sidewall angle of a first reverse-tapered gate electrode sidewall and about two degrees less than the first sidewall angle; and etching the exposed implanted portion to remove substantially all the exposed implanted portion and leave behind a gate dielectric layer. 2. The method of claim 1, wherein forming the reverse-tapered gate electrode comprises: forming a blanket gate electrode layer on a substrate; and removing portions of the blanket gate electrode layer to leave behind a gate electrode with a gate length adjacent the blanket dielectric layer, the gate electrode having reverse-tapered sidewalls so the gate electrode has an intermediate length further from the gate dielectric layer than the gate length, the intermediate length being greater than the gate length. 3. The method of claim 2, further comprising: forming, after forming the gate electrode and the gate dielectric layer, spacers adjacent the gate electrode sidewalls; removing the gate electrode to leave behind a trench between the spacers; and forming a replacement gate electrode in the trench. 4. The method of claim 3, wherein forming a replacement gate electrode in the trench comprises forming a first metal gate electrode layer, the first metal gate electrode layer being conformal to a bottom of the trench and side walls of the trench. 5. The method of claim 4, wherein the first metal gate electrode layer does not completely fill the trench and wherein forming a replacement gate electrode in the trench further comprises forming a second gate electrode layer on the first metal gate electrode layer in the trench. 6. The method of claim 2, wherein at least a portion of each of the reverse-tapered gate electrode sidewalls has a sidewall angle between the reverse-tapered gate electrode sidewalls and a top surface of the substrate, the sidewall angle being between about eighty-five degrees and about seventy-five degrees. 7. The method of claim 6, wherein the ions are implanted at an angle between about that of the sidewall angle and about two degrees less than the sidewall angle. 8. The method of claim 1, wherein at least a portion of the reverse-tapered gate electrode sidewalls has a sidewall angle between the gate electrode sidewalls and the substrate and wherein implanting ions further comprises: performing a second ion implantation process after the first ion implantation process, during which ions are implanted at an angle between about that of a second sidewall angle of a second reverse-tapered gate electrode sidewall opposite the first reverse-tapered gate electrode sidewall and about two degrees less than the second sidewall angle.