초록 ▼

A gas sensing mechanism and a gas sensor based on a semiconducting carbon nanotube diode structure are disclosed. The gas sensor operates by detecting the change in conductivity characteristic of the current vs. voltage behavior of an I--N, or I--P junction, in the carbon nanotube. In the presence o

A gas sensing mechanism and a gas sensor based on a semiconducting carbon nanotube diode structure are disclosed. The gas sensor operates by detecting the change in conductivity characteristic of the current vs. voltage behavior of an I--N, or I--P junction, in the carbon nanotube. In the presence of electrophilic gas species at the I--N junction, or nucleophilic gas species at the I--P junction, a P--N, or N--P, junction is created by doping of the carbon nanotube by the respective gas species. The resulting change from the undoped, instrinsic i-type to p-type, or n-type, creates a diode structure whose conductivity characteristics can be measured with high accuracy and selectivity.

대표청구항 ▼

What is claimed is: 1. A gas sensing device for selectively detecting electrophilic species comprising: an insulating substrate; two conducting electrode pads deposited on said substrate, separated by a gap greater than about 10 nm; and semiconducting carbon nanotube material deposited on said two

What is claimed is: 1. A gas sensing device for selectively detecting electrophilic species comprising: an insulating substrate; two conducting electrode pads deposited on said substrate, separated by a gap greater than about 10 nm; and semiconducting carbon nanotube material deposited on said two electrode pads forming a conduction path, wherein about one half of said carbon nanotube material is in an undoped, instrinsic i-type electronic state and the remaining portion of said nanotube material is doped with a nucleophilic species to form an n-type semiconductor, such that an I--N junction is formed, wherein a P--N junction diode is formed in the presence of said electrophilic species; and circuitry connected to said electrode pads for measuring the conductivity characteristics of the diode structure, wherein the circuitry is configured to detect the presence of said electrophilic species by detecting the presence of a knee in a current-voltage curve for the semiconducting carbon nanotube material. 2. The device of claim 1, wherein the carbon nanotube material comprises single-walled carbon nanotubes. 3. The device of claim 1, further comprising: a backgate electrode layer connected to the diode structure for applying a DC bias to the diode structure. 4. The device of claim 1, further comprising: a filter coating of chemoselective film applied on the i-type portion of the carbon nanotube material. 5. The device of claim 1, wherein the electrophilic species comprises oxygen gas, chemical warfare agents, or other electron acceptor gasses. 6. The device of claim 1, further comprising: circuitry for detecting individual electrophilic species by registering and analyzing said conductivity characteristics of said individual electrophilic species; and circuitry for providing an output signal upon said detecting of said individual electrophilic species. 7. A gas sensing device for selectively detecting nucleophilic species comprising: an insulating substrate; two conducting electrode pads deposited on said substrate, separated by a gap greater than about 10 nm; and semiconducting carbon nanotube material deposited on said two electrode pads forming a conduction path, wherein about one half of said carbon nanotube material is in an undoped, instrinsic i-type electronic state and the remaining portion of said nanotube material is doped with an electrophilic species to form a p-type semiconductor, such that an I--P junction is formed, wherein an N--P junction diode is formed in the presence of said nucleophilic species; and circuitry connected to said electrode pads for measuring the conductivity characteristics of the diode structure, wherein the circuitry is configured to detect the presence of said nucleophilic species by detecting the presence of a knee in a current-voltage curve for the semiconducting carbon nanotube material. 8. The device of claim 7, wherein the carbon nanotube material comprises single-walled carbon nanotubes. 9. The device of claim 7, further comprising: a backgate electrode layer connected to the diode structure for applying a DC bias to the diode structure. 10. The device of claim 7, further comprising: a filter coating of chemoselective film applied on the i-type portion of the carbon nanotube material. 11. The device of claim 7, wherein the nucleophilic species comprises sarin, tabun, DMMP, soman, other chemical warfare agents or other electron donating gasses. 12. The device of claim 7, further comprising: circuitry for detecting individual nucleophilic species by registering and analyzing said conductivity characteristics of said individual nucleophilic species; and circuitry for providing an output signal upon said detecting of said individual nucleophilic species. 13. The device of claim 1, wherein the circuitry is configured to identify the electrophilic gas by determining a voltage intercepted by a slope line of a portion of the current-voltage curve that is beyond the knee and correlating the electrophilic gas to an electrophilic gas having a calibrated voltage intercept that corresponds to the voltage intercept determined. 14. The device of claim 7, wherein the circuitry is configured to identify the nucleophilic gas by determining a voltage intercepted by a slope line of a portion of the current-voltage curve that is beyond the knee and correlating the nucleophilic gas to a nucleophilic gas having a calibrated voltage intercept that corresponds to the voltage intercept determined. 15. The device of claim 1, wherein the circuitry is configured to measure the concentration of the electrophilic gas in parts per billion after the electrophilic gas has been identified as a calibrated electrophilic gas by applying a probe voltage and measuring a resulting current and determining the concentration of the electrophilic gas from a lookup table for the calibrated electrophilic gas using the applied voltage and the measured current. 16. The device of claim 7, wherein the circuitry is configured to measure the concentration of the nucleophilic gas in parts per billion after the nucleophilic gas has been identified as a calibrated nucleophilic gas by applying a probe voltage and measuring a resulting current and determining the concentration of the nucleophilic gas from a lookup table for the calibrated nucleophilic gas using the applied voltage and the measured current.