초록 ▼

An interconnect structure which includes a metal-containing cap located atop each conductive feature that is present within a dielectric material is provided in which a surface region of the metal-containing cap is oxidized prior to the subsequent deposition of any other dielectric material thereon.

An interconnect structure which includes a metal-containing cap located atop each conductive feature that is present within a dielectric material is provided in which a surface region of the metal-containing cap is oxidized prior to the subsequent deposition of any other dielectric material thereon. Moreover, metal particles that are located on the surface of the dielectric material between the conductive features are also oxidized at the same time as the surface region of the metal-containing cap. This provides a structure having a reduced leakage current. In accordance with the present invention, the oxidation step is performed after electroless plating of the metal-containing cap and prior to the deposition of a dielectric capping layer or an overlying interlayer or intralevel dielectric material.

대표청구항 ▼

What is claimed is: 1. An interconnect structure comprising: a dielectric material having at least one conductive feature embedded therein, said at least one conductive feature having a surface that is coplanar with an upper surface of the dielectric material; a metal-containing cap having a thickn

What is claimed is: 1. An interconnect structure comprising: a dielectric material having at least one conductive feature embedded therein, said at least one conductive feature having a surface that is coplanar with an upper surface of the dielectric material; a metal-containing cap having a thickness from about 1 to about 20 nm disposed on said at least one conductive feature, said metal-containing cap having an oxidized surface region having a thickness that is less than 5 nm located upon an unoxidized lower region, wherein an outer edge of the metal-containing cap is aligned to an outer edge of the at least one conductive feature; and completely oxidized metal particles located on said surface of said dielectric material adjacent said at least one conductive feature. 2. The interconnect structure of claim 1 wherein said dielectric material is one of SiO2, a silsesquioxane, a C doped oxide that includes atoms of Si, C, O and H, or a thermosetting polyarylene ether. 3. The interconnect structure of claim 1 wherein said at least one conductive feature is a via, a line or a combination thereof. 4. The interconnect structure of claim 1 wherein said at least one conductive feature comprises Cu, W, Al or alloys thereof. 5. The interconnect structure of claim 4 wherein said at least one conductive feature comprises Cu or a Cu-containing alloy. 6. The interconnect structure of claim 1 wherein said at least one conductive feature is separated in part from said dielectric material by a diffusion barrier. 7. The interconnect structure of claim 1 wherein said metal-containing cap comprises elemental Go, elemental Ni, CoP, CoWP, CoB, CoWB, NiP, NiWP or NiWB. 8. The interconnect structure of claim 7 wherein said metal-containing cap comprises CoWP or CoP. 9. The interconnect structure of claim 1 further comprising at least one other dielectric material covering said metal-containing cap and said oxidized metal particles, wherein said at least one other dielectric material comprises one of a dielectric capping layer, or a second dielectric material that is the same or different from said dielectric material including said at least one conductive feature embedded therein. 10. An interconnect structure comprising: a dielectric material having at least one Cu-containing conductive feature embedded therein, said at least one Cu-containing conductive feature having a surface that is coplanar with an upper surface of the dielectric material; a CoWP or CoP cap having a thickness from about 1 nm to about 20 nm disposed on said at least one conductive feature, said CoWP or CoP having an oxidized surface region having a thickness that is less than 5 nm located upon an unoxidized lower region, wherein an outer edge of the CoWP or CoP cap is alianed to an outer edae of the at least one Cu-containing conductive feature; and completely oxidized Co particles located on said surface of said dielectric material adjacent said at least one Cu-containing conductive feature. 11. The interconnect structure of claim 10 further comprising at least one other dielectric material covering said CoWP of CoP cap and said oxidized Co particles, wherein said at least one other dielectric material comprises one of a dielectric capping layer or a second dielectric material that is the same or different from said dielectric material including said at least one Cu-containing conductive feature embedded therein.