A voltage-resistant switch comprising a first switching contact and a second switching contact, and an MOS switching transistor having a source terminal, a drain terminal and a gate terminal, wherein the source terminal of the MOS switching transistor is connected to the second switching contact, an
A voltage-resistant switch comprising a first switching contact and a second switching contact, and an MOS switching transistor having a source terminal, a drain terminal and a gate terminal, wherein the source terminal of the MOS switching transistor is connected to the second switching contact, and the drain terminal of the MOS switching transistor is connected to the first switching contact. The voltage-resistant switch has a switching monitoring unit with a control input and a protection output and a protection switch with a switching input, wherein the switching input is connected to the protection output of the switching monitoring unit and the protection switch is arranged and adapted to electrically connect the gate terminal of the first MOS switching transistor to the source terminal of the first MOS switching transistor in dependence on a protection signal.
대표청구항▼
What is claimed is: 1. A voltage-resistant switch, said switch comprising: a first switching contact; a second switching contact; a first MOS switching transistor having a source terminal, a drain terminal, and a gate terminal, and wherein the source terminal of the first MOS switching transistor i
What is claimed is: 1. A voltage-resistant switch, said switch comprising: a first switching contact; a second switching contact; a first MOS switching transistor having a source terminal, a drain terminal, and a gate terminal, and wherein the source terminal of the first MOS switching transistor is connected to the second switching contact, and the drain terminal of the first MOS switching transistor is connected to the first switching contact, and wherein the voltage-switch is adapted for switching a potential which is to be applied to or which is applied to the first or the second switching contact; and a switching monitoring unit with a control input and a protection output which is connected to a switching input of a protection switch, and wherein said protection switch electrically connects the gate terminal of the first MOS switching transistor to the source terminal of the first MOS switching transistor in dependence on a protection signal when the switching monitoring unit outputs the protection signal to a protection input of the protection switch, and wherein the switching monitoring unit is adapted to produce and output said protection signal in dependence on a potential at either said gate terminal or said source terminal of said first MOS switching transistor to provide protection against exceeding a breakdown voltage of said first MOS switching transistor, wherein the switching monitoring unit includes a control output connected to the gate terminal of the first MOS switching transistor, and wherein the switching monitoring unit is adapted for acting on the gate terminal of the first MOS switching transistor with a control potential for turning on or for blocking the first MOS switching transistor, between the source terminal and the gate terminal of the first MOS switching transistor, and wherein the switching monitoring unit is adapted to select the control potential from a number of predetermined control potentials in dependence on a predetermined switching potential that is to be switched by said voltage-resistant switch, or a first potential which is applied to or is to be applied to the first switching contact and is to be switched by said voltage-resistant switch and/or a second potential which is applied to or is to be applied to the second switching contact and is to be switched by said voltage-resistant switch, in a predetermined manner. 2. The voltage-resistant switch of claim 1 wherein the protection switch includes a first MOS protection transistor having a switching input formed by a gate terminal, and wherein a drain terminal of the first MOS protection transistor is connected to the gate terminal of the first MOS switching transistor, and a source terminal of the first MOS protection transistor is connected to the source terminal of the first MOS switching transistor, and wherein the switching monitoring unit is adapted, in a blocking condition of the first MOS switching transistor, to act on the gate terminal of the first MOS protection transistor with a switching-through potential such that the first MOS protection transistor turns on and, when the first MOS switching transistor is turned on, to act on the gate terminal of the first MOS protection transistor with a blocking potential such that the first MOS protection transistor blocks. 3. The voltage-resistant switch of claim 2 further comprising a second MOS switching transistor being connected in series with the first MOS switching transistor such that a source terminal of the second MOS switching transistor is connected to the source terminal of the first MOS switching transistor, and the drain terminal of the first MOS switching transistor is connected to the first switching contact, and a drain terminal of the second MOS switching transistor is connected to the second switching contact. 4. The voltage-resistant switch of claim 3 wherein a gate terminal of the second MOS switching transistor is connected separately to the switching monitoring unit and the switching monitoring unit is adapted, in dependence on a potential which is to be applied to or is applied to the first switching contact and/or a potential which is to be applied to or is applied to the second switching contact, to act on the gate terminals of the MOS switching transistors respectively, independently of each other with a control potential which is predetermined for the respective MOS switching transistors. 5. The voltage-resistant switch of claim 4 wherein the switching monitoring unit includes a center potential terminal connected to the source terminals of the MOS switching transistors, and wherein the switching monitoring unit is adapted, upon blocking of the MOS switching transistors, to act on the center potential terminal with a center potential such that a respective predetermined potential difference between the center potential tenninal and the gate terminals of the MOS switching transistors is not exceeded. 6. The voltage-resistant switch of claim 5 wherein the gate terminal of the first MOS switching transistor is connected to a gate terminal of the second MOS switching transistor. 7. The voltage-resistant switch of claim 6 further comprising a second MOS protection transistor is connected to the source terminal at least of the first MOS switching transistor, and the drain terminal of the first MOS protection transistor is connected to the gate terminal at least of the first MOS switching transistor, and the gate terminal of the first MOS protection transistor is connected to a gate terminal of the second MOS protection transistor. 8. The voltage-resistant switch of claim 7 wherein each MOS switching transistor includes a bulk terminal, the bulk terminal being connected to the respective source terminal. 9. The voltage resistant switch of claim 8 wherein each MOS protection transistor includes a bulk terminal, the bulk terminal being connected to the respective source terminal. 10. The voltage-resistant switch of claim 9 wherein the MOS switching transistors and the MOS protection transistors are in the form of asymmetrical MOS transistors. 11. The voltage-resistant switch of claim 10 wherein the MOS switching transistors and the MOS protection transistors are in the form of insulated gate bipolar transistors. 12. The voltage-resistant switch of claim 11 wherein the voltage-resistant switch is monolithically integrated. 13. A cardiac pacemaker or defibrillator, said cardiac pacemaker or defibrillator comprising a voltage-resistant switch wherein said voltage-resistant switch includes a first switching contact, a second switching contact, and a first MOS switching transistor having a source terminal, a drain terminal, and a gate terminal wherein the source terminal of the first MOS switching transistor is connected to the second switching contact, and the drain terminal of the first MOS switching transistor is connected to the first switching contact, and wherein the voltage-resistant switch is adapted for switching a potential which is to be applied to or which is applied to the first or the second switching contact, and wherein the voltage-resistant switch also includes a switching monitoring unit with a control input and a protection output which is connected to a switching input of a protection switch, and wherein said protection switch electrically connects the gate terminal of the first MOS switching transistor to the source terminal of the first MOS switching transistor in dependence on a protection signal when the switching monitoring unit outputs the protection signal to a protection input of the protection switch, and wherein the switching monitoring unit is adapted to produce and output said protection signal in dependence on a potential at either said gate terminal or said source terminal of said first MOS switching transistor to provide protection against exceeding a breakdown voltage of said first MOS switching transistor, wherein the switching monitoring unit includes a control output connected to the gate terminal of the first MOS switching transistor, and wherein the switching monitoring unit is adapted for acting on the gate terminal of the first MOS switching transistor with a control potential for turning on or for blocking the first MOS switching transistor, between the source terminal and the gate terminal of the first MOS switching transistor, and wherein the switching monitoring unit is adapted to select the control potential from a number of predetermined control potentials in dependence on a predetermined switching potential that is to be switched by said voltage-resistant switch, or a first potential which is applied to or is to be applied to the first switching contact and is to be switched by said voltage-resistant switch and/or a second potential which is applied to or is to be applied to the second switching contact and is to be switched by said voltage-resistant switch, in a predetermined manner. 14. A stimulation unit for the stimulation of a heart, said stimulation unit comprising: a capacitor for the storage of electrical charge for a stimulation signal; and a voltage-resistant switch including a first switching contact, a second switching contact, and a first MOS switching transistor having a source terminal, a drain terminal, and a gate terminal wherein the source terminal of the first MOS switching transistor is connected to the second switching contact, and the drain terminal of the first MOS switching transistor is connected to the first switching contact, and wherein the voltage-resistant switch is adapted for switching a potential which is to be applied to or which is applied to the first or the second switching contact, and wherein the voltage-resistant switch also includes a switching monitoring unit with a control input and a protection output which is connected to a switching input of a protection switch, and wherein said protection switch electrically connects the gate terminal of the first MOS switching transistor to the source terminal of the first MOS switching transistor in dependence on a protection signal when the switching monitoring unit outputs the protection signal to a protection input of the protection switch, and wherein the switching monitoring unit is adapted to produce and output said protection signal in dependence on a potential at either said gate terminal or said source terminal of said first MOS switching transistor to provide protection against exceeding a breakdown voltage of said first MOS switching transistor, and wherein the voltage-resistant switch is operatively connected to the capacitor such that discharging of the capacitor takes place by way of the voltage-resistant switch, wherein the switching monitoring unit includes a control output connected to the gate terminal of the first MOS switching transistor, and wherein the switching monitoring unit is adapted for acting on the gate terminal of the first MOS switching transistor with a control potential for turning on or for blocking the first MOS switching transistor, between the source terminal and the gate terminal of the first MOS switching transistor, and wherein the switching monitoring unit is adapted to select the control potential from a number of predetermined control potentials in dependence on a predetermined switching potential that is to be switched by said voltage-resistant switch, or a first potential which is applied to or is to be applied to the first switching contact and is to be switched by said voltage-resistant switch and/or a second potential which is applied to or is to be applied to the second switching contact and is to be switched by said voltage-resistant switch, in a predetermined manner. 15. The stimulation unit of claim 14 further comprising a control unit, wherein the control unit is connected to the voltage-resistant switch and is adapted to switch stimulation ignals, for the stimulation of a heart, with the voltage-resistant switch.
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이 특허에 인용된 특허 (9)
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