초록 ▼

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photovoltaic devices, e.g., organic solar cells. Further, it is directed to an optimized organic solar cell comprising multiple stacked subcells in series. High pow

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photovoltaic devices, e.g., organic solar cells. Further, it is directed to an optimized organic solar cell comprising multiple stacked subcells in series. High power conversion efficiency are achieved by fabrication of a photovoltaic cell comprising multiple stacked subcells with thickness optimization and employing an electron blocking layer.

대표청구항 ▼

What is claimed is: 1. An organic photosensitive optoelectronic device comprising: an anode, a first subcell comprising an electron donor layer and an electron acceptor layer; a second subcell comprising an electron donor layer and an electron acceptor layer; an electron-hole recombination zone con

What is claimed is: 1. An organic photosensitive optoelectronic device comprising: an anode, a first subcell comprising an electron donor layer and an electron acceptor layer; a second subcell comprising an electron donor layer and an electron acceptor layer; an electron-hole recombination zone contacting an organic semiconductor layer of the first subcell and an organic semiconductor layer of the second subcell; and a cathode, wherein, the electron-hole recombination zone is less than about 20 Å in thickness; and wherein, upon illumination of the device, the current generated in the first subcell and the current generated in the second subcell differ by less than about 10%. 2. The device of claim 1, wherein the device further comprises additional subcells separated by electron-hole recombination zones, wherein the current generated by each subcell differs by less than about 10%. 3. The device of claim 1, wherein the device further comprises an exciton blocking layer. 4. The device of claim 3, wherein the exciton blocking layer comprises BCP. 5. The device of claim 1, wherein the electron-hole recombination zone is a semitransparent metal layer. 6. The device of claim 5, wherein the semitransparent metal layer is selected from a layer of Ag, Li, LiF, Al, Ti and Sn. 7. The device of claim 6, wherein the semitransparent metal layer is a layer of Ag. 8. The device of claim 5, wherein the semitransparent metal layer is about 5 Å in thickness. 9. The device of claim 5, wherein the semitransparent metal layer is composed of nanoparticles. 10. The device of claim 1, wherein the device further comprises an anode-smoothing layer. 11. The device of claim 10, wherein the anode-smoothing layer comprises PEDOT. 12. The device of claim 1, wherein the electron donor layer comprises a pthalocyanine or a porphyrin, and the electron acceptor layer comprises a perylene, naphthalene, fullerene or nanotubule.