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A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric la

A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.

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What is claimed is: 1. An electronic device comprising: a substrate; a dielectric layer disposed above substrate, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide being a bimetal oxide (HfxTayOz x>0, y>0, z>0), the hafnium tantalum oxide layer structur

What is claimed is: 1. An electronic device comprising: a substrate; a dielectric layer disposed above substrate, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide being a bimetal oxide (HfxTayOz x>0, y>0, z>0), the hafnium tantalum oxide layer structured as one or more monolayers; and a conductive layer on and contacting the dielectric layer. 2. The electronic device of claim 1, wherein the dielectric layer is disposed as a capacitor dielectric in a capacitor of a dynamic random access memory. 3. The electronic device of claim 1, wherein the dielectric layer is disposed as a capacitor dielectric in a capacitor of an analog integrated circuit. 4. The electronic device of claim 1, wherein the dielectric layer is disposed as a capacitor dielectric in a capacitor of a radio frequency integrated circuit. 5. The electronic device of claim 1, wherein the dielectric layer is disposed as a capacitor dielectric in a capacitor of a mixed signal integrated circuit. 6. The electronic device of claim 1, wherein the dielectric layer includes a nanolaminate containing the hafnium tantalum oxide layer. 7. The electronic device of claim 6, wherein the nanolaminate includes a HfOx layer. 8. The electronic device of claim 6, wherein the nanolaminate includes a TaOx layer. 9. The electronic device of claim 6, wherein the nanolaminate is disposed as a dielectric in a NROM flash memory. 10. The electronic device of claim 1, wherein the dielectric layer is essentially the hafnium tantalum oxide layer. 11. The electronic device of claim 1, wherein the hafnium tantalum oxide layer is a hafnium-rich hafnium tantalum oxide layer. 12. The electronic device of claim 1, wherein the hafnium tantalum oxide layer is a tantalum-rich hafnium tantalum oxide layer. 13. The electronic device of claim 1, wherein the hafnium tantalum oxide layer is doped with zirconium. 14. The electronic device of claim 1, wherein the hafnium tantalum oxide layer is doped with a lanthanide. 15. The electronic device of claim 1, wherein the dielectric layer includes a dielectric nitride. 16. The electronic device of claim 1, wherein the dielectric layer includes a dielectric metal silicate. 17. The electronic device of claim 1, wherein the dielectric layer includes a dielectric metal oxide in which the metal is a metal other than tantalum or hafnium. 18. An electronic device comprising: a substrate; a source region and a drain region separated by a body region in the substrate; a dielectric layer above the body region, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide being a bimetal oxide (HfxTayOz x>0, y>0, z>0), the hafnium tantalum oxide layer structured as one or more monolayers; and a gate above the dielectric layer. 19. The electronic device of claim 18, wherein the gate is a control gate and the dielectric layer is an inter-gate dielectric disposed between the control gate and a floating gate. 20. The electronic device of claim 18, wherein the electron device includes a memory. 21. The electronic device of claim 20, wherein the dielectric layer is a gate insulator of a transistor in a memory array of the memory. 22. The electronic device of claim 20, wherein the memory includes a second dielectric layer having a hafnium tantalum oxide layer as a dielectric of a capacitor in the memory. 23. The electronic device of claim 20, wherein the memory includes a flash memory device. 24. The electronic device of claim 23, wherein the dielectric layer is an inter-gate insulator between the gate configured as a control gate and a floating gate of a transistor in the flash memory device. 25. The electronic device of claim 23, wherein the dielectric layer is a gate insulator between the gate configured as a floating gate and the body region configured as a channel of a transistor in the flash memory device. 26. The electronic device of claim 18, wherein the dielectric layer is a gate insulator in a silicon CMOS device. 27. A system comprising: a controller; an integrated circuit coupled to the controller, wherein at least one of the controller or integrated circuit includes: a substrate; a source region and a drain region separated by a body region in the substrate; a dielectric layer above the body region, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide being a bimetal oxide (HfxTayOz x>0, y>0, z>0), the hafnium tantalum oxide layer structured as one or more monolayers; and a gate above the dielectric layer. 28. The system of claim 27, wherein the gate is a control gate and the dielectric layer is an inter-gate dielectric disposed between the control gate and a floating gate. 29. The system of claim 27, wherein the body region has a nitrated surface onto which the dielectric layer is disposed. 30. The system of claim 27, wherein the integrated circuit includes a memory. 31. The system of claim 27, wherein the controller includes a processor. 32. The system of claim 27, wherein the integrated circuit includes a mixed signal integrated circuit. 33. The system of claim 27, wherein the system includes an information handling system. 34. The system of claim 33, wherein the information handling system includes a wireless system. 35. The system of claim 27, wherein the system includes a fiber optic system or an electro-optic system.