IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0895870
(2004-07-21)
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등록번호 |
US-7608385
(2009-11-10)
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우선권정보 |
JP-2003-279265(2003-07-24) |
발명자
/ 주소 |
- Kojima, Rie
- Doi, Yukako
- Yamada, Noboru
|
출원인 / 주소 |
|
대리인 / 주소 |
Hamre, Schumann, Mueller & Larson, P.C.
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인용정보 |
피인용 횟수 :
1 인용 특허 :
5 |
초록
▼
The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material l
The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.
대표청구항
▼
What is claimed is: 1. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL1 consisting
What is claimed is: 1. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL1 consisting of La, Ga and In, and Zr, and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: ZrQ1L1T1O100-Q1-T1(atom %) where L1 is at least one element selected from the group GL1, and Q1 and T1 satisfy 1.0≦Q1≦31.6, 3.3≦T1≦38.8, and 20<Q1+T1<60. 2. The information recording medium according to claim 1, wherein L1 is Ga. 3. The information recording medium according to claim 1, wherein the oxide-based material layer contains a material that can be expressed by: (D1)X1(E1)100-X1(mol %) where D1 is an oxide of Zr, E1 is an oxide of at least one element selected from the group GL1, and X1 satisfies 5<X1<95. 4. The information recording medium according to claim 3, wherein D1 is ZrO2 and E1 is Ga2O3. 5. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and oxygen (O)), wherein the oxide-based material layer contains a material having a composition expressed by: M1Q2L3T2O100-Q2-T2(atom %) where M1 is a mixture of Zr and Hf, or Hf, L3 is at least one element selected from the group GL3, and Q2 and T2 satisfy 1.0≦Q2≦32.2, 1.7≦T2≦46.3, and 20<Q2+T2<60. 6. The information recording medium according to claim 5, wherein L3 is Ga. 7. The information recording medium according to claim 5, wherein the oxide-based material layer contains a material that can be expressed: (D2)X2(E3)100-X2(mol %) where D2 is an oxide of M1, E3 is an oxide of at least one element selected from the group GL3, and X2 satisfies 5<X2<95. 8. The information recording medium according to claim 7, wherein E3 is Ga2O3. 9. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Si, and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: ZrQ3SiR1L2T3O100-Q3-R1-T3 (atom %) where L2 is at least one element selected from the group GL2, and Q3, R1 and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60. 10. The information recording medium according to claim 9, wherein L2 is Ga. 11. The information recording medium according to claim 9, wherein the oxide-based material layer contains a material that can be expressed by: (ZrO2)X3(g)Z1(E2)100-X3-Z1 (mol %) where g is at least one compound selected from the group consisting of SiO2, Si3N4 and SiC, E2 is an oxide of at least one element selected from the group GL2, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90. 12. The information recording medium according to claim 11, wherein E2 is Ga2O3. 13. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Si, and oxygen (O), wherein the oxide-based material layer further contains at least one element selected from the group GK1 consisting of carbon (C), nitrogen (N) and Cr. 14. The information recording medium according to claim 13, wherein the oxide-based material layer contains a material having a composition expressed by: ZrQ3SiR1L2T3K1J1O 100-Q3-R1-T3-J1(atom %) where L2 is at least one element selected from the group GL2, and K1 is at least one element selected from the group GK1, and Q3, R1, T3 and J1 satisfy 0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and 20<Q3+R1+T3+J1<80. 15. The information recording medium according to claim 14, wherein L2 is Ga. 16. The information recording medium according to claim 14, wherein the oxide-based material layer contains a material that can be expressed by: (ZrO2)X3(g)Z1(E2)100-X3-Z1 (mol %) where g is at least one compound selected from the group consisting of SiO2, Si3N4 and SiC, E2 is an oxide of at least one element selected from the group GL2, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90. 17. The information recording medium according to claim 16, wherein E2 is Ga2O3. 18. The information recording medium according to claim 14, wherein the oxide-based material layer contains a material that can be expressed by: (ZrO2)X3(SiO2)Z2(E2) 100-X3-Z2-A1(mol %) where f is at least one compound selected from the group consisting of SIC, Si3N4, and Cr2O3, E2 is an oxide of at least one element selected from the group GL2, and X3, Z2 and A1 satisfy 10≦X3<90, 0<Z2≦50, 0<A1≦50, and 10<X3+Z2A1≦90. 19. The information recording medium according to claim 18, wherein E2 is Ga2O3. 20. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Cr, and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: ZrQ4CrUL2T4O100-Q4-U-T4 (atom %) where L2 is at least one element selected from the group GL2, and Q4, U and T4 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60. 21. The information recording medium according to claim 20 wherein L2 is Ga. 22. The information recording medium according to claim 20, wherein the oxide-based material layer contains a material that can be expressed by: (ZrO2)X4(Cr2O3)(E2) 100-X4-A2(mol %) where E2 is an oxide of at least one element selected from the group GL2, and X4 and A2 satisfy 10≦X4<90, 0<A2≦40, and 10<X4+A2≦90. 23. The information recording medium according to claim 22, wherein E2 is Ga2O3. 24. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Cr, and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: ZrQ4CrUL2T4SiR2K2J2 O100-Q4-U-T4-R2-J2(atom %) where L2 is at least one element selected from the group GL2, and K2 is at least one element selected from the group GK2 consisting of nitrogen (N) and carbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, 0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85. 25. The information recording medium according to claim 24, wherein L2 is Ga. 26. The information recording medium according to claim 24, wherein the oxide-based material layer contains a material that can be expressed by: (ZrO2)X4(Cr2O3)A2 (h)Z3(E2)100-X4-A2-Z3(mol %) where h is at least one compound selected from the group consisting of Si3N4 and SiC, E2 is an oxide of at least one element selected from the group GL2, and X4, A2, and Z3 satisfy 10≦X4<90, 0<A2≦40, 0<Z3≦40, and 10<X4+A2+Z3≦90. 27. The information recording medium according to claim 26, wherein E2 is Ga2O3. 28. The information recording medium according to claim 1, further comprising at least one recording layer. 29. The information recording medium according to claim 28, wherein a phase change is caused in the recording layer. 30. The information recording medium according to claim 29, wherein the recording layer comprises any one material selected from the group consisting of Ge--Sb--Te, Ge--Sn--Sb--Te, Ge--Bi--Te, Ge--Sn--Bi--Te, Ge--Sb--Bi--Te, Ge--Sn--Sb--Bi--Te, Ag--In--Sb--Te and Sb--Te. 31. The information recording medium according to claim 30, wherein a thickness of the recording layer is 20 nm or less. 32. The information recording medium according to claim 28, wherein the oxide-based material layer is provided in contact with at least one surface of the recording layer. 33. The information recording medium according to claim 28, comprising a plurality of recording layers, wherein at least one of the plurality of recording layers is said recording layer. 34. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL1 consisting of La, Ga and in, at least one element selected from the group GL consisting of Al, Mg and Y, and Zr, and oxygen (O)), wherein the oxide-based material layer contains a material having a composition expressed by: ZrQ1L1T1LT7O100-Q1-T1-T7 (atom %) where L1 is at least one element selected from the group GL1, L is at least one element selected from the group GL, and Q1, T1 and T7 satisfy 1.0≦Q1≦32.2, 1.7≦T1+T7≦46.3, and 20<Q1+T1<60. 35. The information recording medium according to claim 5, further comprising at least one recording layer. 36. The information recording medium according to claim 9, further comprising at least one recording layer. 37. The information recording medium according to claim 20, further comprising at least one recording layer. 38. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, at least one element selected from the group GL4 consisting of Ce, Al and In, and M1 (where M1 is a mixture of Zr and Hf, or Hf), and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: M1Q2L3T5L4T6O100-Q2-T5-T6 (atom %) where M1 is a mixture of Zr and Hf, or Hf, L3 is at least one element selected from the group GL3, L4 is at least one element selected from the group GL4, and Q2, T5 and T6 satisfy 1.0≦Q2≦32.2, 1.7≦T5+T6≦46.3, and 20<Q2+T5+T6<60. 39. The information recording medium according to claim 38, wherein the oxide-based material layer contains a material that can be expressed: (D2)100-X5-X6(E4)X6(E3)X5(mol %) Where D2 is an oxide of M1, E3 is an oxide of at least one element selected from the group GL3, E4 is an oxide of at least one element selected from the group GL4, and X5 and X6 satisfy 5≦X5+X6≦95. 40. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg, and Y, and Si, and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: M1Q3SiR1L3T3O100-Q3-R1-T3 (atom %) where L3 is at least one element selected from the group GL3, and Q3, R1 and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60. 41. The information recording medium according to claim 40, wherein L3 is Ga. 42. The information recording medium according to claim 40, wherein the oxide-based material layer contains a material that can be expressed by: (D2)X3(g)Z1(E3)100-X3-Z1(mol %) where D2 is an oxide of M1, g is at least one compound selected from the group consisting of SiO2, Si3N4 and SiC, E3 is an oxide of at least one element selected from the group GL3, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90. 43. The information recording medium according to claim 42, wherein E3 is Ga2O3. 44. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg, and Y, and Si, and oxygen (O), wherein the oxide-based material layer further contains at least one element selected from the group GK1 consisting of carbon (C), nitrogen (N) and Cr. 45. The information recording medium according to claim 44, wherein the oxide-based material layer contains a material having a composition expressed by: M1Q3SiR1L3T3K1J1O 100-Q3-R1-T3-J1(atom %) where K1 is at least one element selected from the group GK1, L3 is at least one element selected from the group GL3, and Q3, R1, T3 and J1 satisfy 0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and 20<Q3+R1+T3+J1<80. 46. The information recording medium according to claim 45, wherein L3 is Ga. 47. The information recording medium according to claim 45, wherein the oxide-based material layer contains a material that can be expressed by: (D2)X3(g)Z1(E3)100-X3-Z1(mol %) where D2 is an oxide of M1, g is at least one compound selected front the group consisting of SiO2, Si3N4 and SiC, E3 is an oxide of at least one element selected from the group GL3, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90. 48. The information recording medium according to claim 47, wherein E3 is Ga2O3. 49. The information recording medium according to claim 45, wherein the oxide-based material layer contains a material that can be expressed by: (D2)X3(SiO2)Z2(f)A1 (E3)100-X3-Z2-A1(mol %) where D2 is an oxide of M1, f is at least one compound selected from the group consisting of SiC, Si3N4, and Cr2O3, E3 is an oxide of at least one element selected from the group GL3, and X3, Z2 and A1 satisfy 10≦X3<90, 0<Z2≦50, 0<A1≦50, and 10<X3+Z2+A1≦90. 50. The information recording medium according to claim 49, wherein E3 is Ga2O3. 51. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and Cr, and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: M1Q4CrUL3T4O100-Q4-U-T4 (atom %) where L3 is at least one element selected from the group GL3, and Q4, U and T4 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60. 52. The information recording medium according to claim 51, wherein L3 is Ga. 53. The information recording medium according to claim 51, wherein the oxide-based material layer contains a material that can be expressed by: (D2)X4(Cr2O3)A2(E3) 100-X4-A2(mol %) where D2 is an oxide of M1, E3 is an oxide of at least one element selected from the group GL3, and X4 and A2 satisfy 10≦X4<90, 0<A2≦40, and 10<X4+A2≦90. 54. The information recording medium according to claim 53, wherein E3 is Ga2O3. 55. An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising: an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and Cr, and oxygen (O), wherein the oxide-based material layer contains a material having a composition expressed by: M1Q4CrUL3T4SiR2K2J2 O100-Q4-U-T4-R2-J2(atom %) where L3 is at least one element selected from the group GL3, and K2 is at least one element selected from the group GK2 consisting of nitrogen (N) and carbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, 0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85. 56. The information recording medium according to claim 55, wherein L3 is Ga. 57. The information recording medium according to claim 55, wherein the oxide-based material layer contains a material that can be expressed by: (D2)X4(Cr2O3)A2( h)Z3(E3)100-X4-A2-Z3(mol %) where D2 is an oxide of M1, h is at least one compound selected from the group consisting of Si3N4 and SiC, E3 is an oxide of at least one element selected from the group GL3, and X4, A2, and Z3 satisfy 10≦X4<90, 0<A2≦40, 0<Z3≦40, and 10<X4+A2+Z3≦90. 58. The information recording medium according to claim 57, wherein E3 is Ga2O3.
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