Heating device for heating semiconductor wafers in thermal processing chambers
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
F27B-005/14
F27B-005/00
F26B-019/00
출원번호
UP-0399085
(2006-04-06)
등록번호
US-7608802
(2009-11-10)
발명자
/ 주소
Gat, Arnon
Bogart, Bob
출원인 / 주소
Mattson Technology, Inc.
대리인 / 주소
Dority & Manning, P.A.
인용정보
피인용 횟수 :
5인용 특허 :
195
초록▼
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present inven
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.
대표청구항▼
What is claimed: 1. A process for heating semiconductor substrates comprising the steps of: placing a semiconductor substrate in a processing chamber; heating the semiconductor substrate in the processing chamber with a first heating device; and heating the semiconductor substrate in the processing
What is claimed: 1. A process for heating semiconductor substrates comprising the steps of: placing a semiconductor substrate in a processing chamber; heating the semiconductor substrate in the processing chamber with a first heating device; and heating the semiconductor substrate in the processing chamber by a second heating device, the second heating device comprising a laser diode. 2. A process as defined in claim 1, wherein the laser diode is moved relative to the semiconductor wafer during the heating step. 3. A process as defined in claim 1, wherein the second heating device comprises a plurality of laser diodes. 4. A process as defined in claim 1, wherein the laser diode is configured to heat an outer edge of the semiconductor substrate. 5. A process as defined in claim 1, wherein the semiconductor substrate is heated simultaneously by the first heating device and the second heating device. 6. A process as defined in claim 1, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device. 7. A process as defined in claim 6, wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least one of the first heating device and the second heating device for heating the semiconductor substrate in a controlled manner. 8. A process as defined in claim 1, further comprising the step of rotating the semiconductor substrate during heating. 9. A process as defined in claim 7, wherein the controller controls both the first heating device and the second heating device. 10. A process as defined in claim 9, wherein the controller is configured to control the first heating device independently of the second heating device. 11. A process as defined in claim 1, wherein the second heating device emits a localized and focused source of light energy on the semiconductor substrate. 12. A process as defined in claim 2, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device. 13. A process as defined in claim 12, wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least one of the first heating device and the second heating device for heating the semiconductor substrate in a controlled manner. 14. A process as defined in claim 3, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device. 15. A process as defined in claim 14, wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least one of the first heating device and the second heating device for heating the semiconductor substrate in a controlled manner. 16. A process as defined in claim 5, wherein the laser diode is moved relative to the semiconductor wafer during the heating step. 17. A process as defined in claim 16, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device. 18. A process as defined in claim 17, wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least one of the first heating device and the second heating device for heating the semiconductor substrate in a controlled manner. 19. A process as defined in claim 7, wherein the controller is configured to control the second heating device based on information received from the temperature sensing device. 20. A process as defined in claim 11, wherein the second heating device is moved relative to the semiconductor wafer during the heating step. 21. A process as defined in claim 20, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device. 22. A process as defined in claim 21, wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least one of the first heating device and the second heating device for heating the semiconductor substrate in a controlled manner. 23. A process for heating semiconductor substrates comprising: placing a semiconductor substrate in a processing chamber; heating the semiconductor substrate by emitting light energy onto the substrate from a plurality of light energy sources, the light energy sources forming an irradiance distribution across a surface of the semiconductor substrate; rotating the semiconductor substrate during heating; and selectively tuning the irradiance distribution across the surface of the semiconductor substrate by emitting energy from at least one tuning device onto a determined location of the semiconductor substrate, the tuning device comprising a laser diode. 24. A process as defined in claim 23, wherein the at least one tuning device is moved relative to the semiconductor substrate when selectively tuning the irradiance distribution of the plurality of light energy sources. 25. A process as defined in claim 23, wherein the irradiance distribution of the plurality of light energy sources is selectively tuned by a plurality of laser diodes. 26. A process as defined in claim 23, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device. 27. A process as defined in claim 26, wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least the plurality of light energy sources or the tuning device for heating the semiconductor substrate in a controlled manner. 28. A process as defined in claim 23, wherein the at least one tuning device emits focused light energy on the semiconductor substrate. 29. A process as defined in claim 23, wherein the plurality of light energy sources are horizontally oriented with respect to the semiconductor substrate. 30. A process as defined in claim 23, wherein the plurality of light energy sources comprise tungsten halogen lamps. 31. A process as defined in claim 23, wherein the irradiance distribution of the plurality of light energy sources is selectively tuned in order to more uniformly heat the semiconductor substrate. 32. A process for heating semiconductor substrates comprising the steps of: placing a semiconductor substrate in a processing chamber; heating the semiconductor substrate with a plurality of light energy sources that emit light energy onto the semiconductor substrate, the light energy sources being positioned so as to form an irradiance distribution across a surface of the semiconductor substrate, the light energy sources being horizontally oriented with respect to the semiconductor substrate; and further heating the semiconductor substrate by emitting further amounts of light energy onto the semiconductor substrate from at least one tuning device, the tuning device being generally vertically oriented with respect to the semiconductor substrate and emitting sufficient amounts of light energy to heat the substrate. 33. A process as defined in claim 32, further comprising the step of rotating the semiconductor substrate during heating. 34. A process as defined in claim 32, wherein the at least one tuning device emits localized and focused light energy onto a particular location of the semiconductor substrate. 35. A process as defined in claim 32, wherein the at least one tuning device is positioned to heat an outer edge of the semiconductor substrate. 36. A process as defined in claim 32, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device. 37. A process as defined in claim 36, wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least the plurality of light energy sources or the tuning device for heating the semiconductor substrate in a controlled manner. 38. A process as defined in claim 32, wherein the horizontally oriented light energy sources comprise tungsten halogen lamps. 39. A process as defined in claim 32, wherein at least three tuning devices emit light energy onto the semiconductor substrate during heating. 40. A process for heating semiconductor substrates comprising the steps of: placing a semiconductor substrate in a processing chamber; heating the semiconductor substrate in the processing chamber with a first heating device; and heating the semiconductor substrate in the processing chamber by a second heating device, the second heating device comprising a plurality of laser diodes. 41. A process for heating semiconductor substrates comprising the steps of: placing a semiconductor substrate in a processing chamber; heating the semiconductor substrate in the processing chamber with a first heating device; and heating the semiconductor substrate in the processing chamber by a second heating device, the second heating device comprising a laser diode, and wherein the laser diode is configured to heat an outer edge of the semiconductor substrate. 42. A process as defined in claim 41, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device and wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least one of the first heating device and the second heating device. 43. A process as defined in claim 41, further comprising the step of rotating the semiconductor substrate during heating. 44. A process for heating semiconductor substrates comprising the steps of: placing a semiconductor substrate in a processing chamber; heating the semiconductor substrate in the processing chamber with a first heating device; and heating the semiconductor substrate in the processing chamber by a second heating device, the second heating device comprising a laser diode and wherein the semiconductor substrate is heated simultaneously by the first heating device and the second heating device. 45. A process as defined in claim 44, further comprising the step of sensing the temperature of the semiconductor substrate during processing using at least one temperature sensing device and wherein the at least one temperature sensing device is in communication with a controller, the controller receiving temperature information from the temperature sensing device and, in turn, controlling at least one of the first heating device and the second heating device. 46. A process as defined in claim 44, further comprising the step of rotating the semiconductor substrate during heating. 47. A process as defined in claim 44, wherein the second heating device comprises a plurality of laser diodes. 48. A process as defined in claim 44, wherein the laser diode is configured to heat an outer edge of the semiconductor substrate.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (195)
Ahern Brian S. (Boxboro MA) Weyburne David W. (Maynard MA), Actively cooled effusion cell for chemical vapor deposition.
Najm Habib N. (Dallas TX) Moslehi Mehrdad M. (Dallas TX) Banerjee Somnath (Dallas TX) Velo Lino A. (Dallas TX), Apparatus and method for determining wafer temperature using pyrometry.
Anderson Roger N. (San Jose CA) Deacon Thomas E. (San Jose CA) Carlson David K. (Santa Clara CA), Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity.
Eichman Eric C. (Phoenix AZ) Sommer Bruce A. (Phoenix AZ) Churley Michael J. (Tempe AZ) Ramsey W. Chuck (Tempe AZ), Apparatus for elimination of low temperature ammonia salts in TiCl4NH3CVD reaction.
Takahashi Mitsukazu (Kyoto JPX) Chiba Takatoshi (Kyoto JPX) Nishii Kiyofumi (Kyoto JPX), Apparatus for heat-treating wafer by light-irradiation and device for measuring temperature of substrate used in such ap.
Cord Bernhard,DEX ; Schuller Karl-Heinz,DEX ; Zejda Jaroslav,DEX, Apparatus for heating a transparent substrate utilizing an incandescent lamp and a heating disk emitting infrared wavele.
Sheets Ronald E. (Santa Ana CA), Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivatio.
Erikson Carl A. (Schenectady NY) Anthony Thomas R. (Schenectady NY) Cline Harvey E. (Schenectady NY) Ludke Siegwalt (Scotia NY) Fielding John O. (Ballston Lake NY), Apparatus for practicing temperature gradient zone melting.
Fielding John O. (Ballston Lake NY) Erikson Carl A. (Schenectady NY) Anthony Thomas R. (Schenectady NY) Cline Harvey E. (Schenectady NY) Ludke Siegwalt (Scotia NY), Apparatus for practising temperature gradient zone melting.
Gat Anita S. (Palo Alto CA) Westerberg Eugene R. (Palo Alto CA), Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers.
Scapple Robert Y. (Los Angeles CA) Peters John W. (Malibu CA) Linder Jacques F. (Palos Verdes CA) Yee Edward M. (Canyon Country CA), Barrel reactor and method for photochemical vapor deposition.
Ahern Brian S. (Boxboro MA) Weyburne David W. (Maynard MA), Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer.
Beinglass Israel (Sunnyvale CA) Venkatesan Mahalingam (San Jose CA) Gronet Christian M. (San Carlos CA), Depositing polysilicon films having improved uniformity and apparatus therefor.
Gisdakis Spyridon (Munich DEX) Hoepfner Joachim (Planegg DEX), Device for the implementation of a curing process at a semiconductor wafer and method for curing a semiconductor wafer.
Anderson Roger N. (Santa Clara CA) Martin John G. (Cranford NJ) Meyer Douglas (Tempe AZ) West Daniel (Sunnyvale CA) Bowman Russell (San Jose CA) Adams David V. (San Jose CA), Double-dome reactor for semiconductor processing.
Stephen J. Fonash ; Ali Kaan Kalkan ; Robert H. Detig, Electrostatic printing of a metallic toner applied to solid phase crystallization and silicidation.
Fonash Stephen J. ; Kalkan Ali Kaan ; Detig Robert H., Electrostatic printing of a metallic toner to produce a polycrystalline semiconductor from an amorphous semiconductor.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Tanaka Sumi (Yamanashi-ken JPX) Fujikawa Yuichiro (Yamanashi-ken JPX) Yonenaga Tomihiro (Yamanashi-ken JPX) Lee Hideki (Nirasaki JPX), Film deposition processing device having transparent support and transfer pins.
Ishii Kaoru (Garland TX) Wilkinson Thomas F. (Garland TX) Dwyer Stephen J. (Dallas TX) Cooper Rick (Farmers Branch TX), Heating lamp assembly for ccvd reactors.
Moslehi Mehrdad M. (Dallas TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), High performance multi-zone illuminator module for semiconductor wafer processing.
Chang Mei (Cupertino CA) Wang David N. K. (Cupertino CA) White John M. (Hayward CA) Maydan Dan (Los Altos Hills CA), Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films.
Versteeg Vera A. (Rochester NY) Avedisian C. Thomas (Ithaca NY) Raj Rishi (Ithaca NY), Method and apparatus for CVD using liquid delivery system with an ultrasonic nozzle.
Sorrell Furman Y. (Cary NC) Gyurcsik Ronald S. (Raleigh NC) Harris John A. (Clarksville VA), Method and apparatus for controlling rapid thermal processing systems.
Moslehi Mehrdad M. (Dallas TX), Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid.
Robinson McDonald (Paradise Valley AZ) Behee Ronald D. (Tempe AZ) deBoer Wiebe B. (Amersfoort AZ NLX) Johnson Wayne L. (Phoenix AZ), Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus.
Robinson McDonald (Paradise Valley AZ) Behee Ronald D. (Tempe AZ) deBoer Wiebe B. (Amersfoort AZ NLX) Johnson Wayne L. (Phoenix AZ), Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus.
Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX) Jucha Rhett B. (Celeste TX) Loewenstein Lee M. (Plano TX), Method for cleanup processing chamber and vacuum process module.
Kakoschke Ronald (Munich DEX), Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors.
Sheets Ronald E. (Santa Ana CA), Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation la.
Inoue, Satoshi; Shimoda, Tatsuya, Method of separating thin film device, method of transferring thin film device, thin film device, active matrix substrate and liquid crystal display device.
Moslehi Mehrdad M. (Dallas TX) Matthews Robert (Plano TX) Davis Cecil J. (Greenville TX), Multi zone illuminator with embeded process control sensors and light interference elimination circuit.
Moslehi Mehrdad M. (Dallas TX) Matthews Robert (Plano TX) Davis Cecil J. (Greenville TX), Multi-zone illuminator with embedded process control sensors.
Adams David V. (San Jose CA) Anderson Roger N. (Santa Clara CA) Deacon Thomas E. (San Jose CA), Pressure-resistant thermal reactor system for semiconductor processing.
Grim Karen A. (Reading PA) Singh Shobha (Summit NJ) Van Uitert LeGrand G. (Morristown NJ) Zydzik George J. (Columbia NJ), Procedure for rapid thermal annealing of implanted semiconductors.
Tseng Meng C. (Saratoga CA) Telford Susan (Cupertino CA) Chang Mei (Cupertino CA), Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas.
McNeilly ; Michael A. ; Benzing ; Walter C. ; Locke ; Jr. ; Richard M., Process for preparing semiconductor wafers with substantially no crystallographic slip.
Davis Cecil J. (Greenville TX) Freeman Dean W. (Garland TX) Matthews Robert T. (Plano TX) Tomlin Joel T. (Garland TX) Jucha Rhett B. (Celeste TX), Processing apparatus and method.
Davis Cecil J. (Greenville TX) Freeman Dean W. (Garland TX) Matthews Robert T. (Plano TX) Tomlin Joel T. (Garland TX), Processing apparatus for wafers.
Brors Daniel L. (Fremont CA) Lane Larry R. (San Jose CA) Goldsborough Mark W. (Santa Clara CA) Samsel Jason M. (Milpitas CA) van Mastrigt Max (San Jose CA) Foster Robert (San Francisco CA), Rapid thermal cvd apparatus.
Fiory Anthony T. (Summit NJ), Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for pra.
Najm Habib N. (Dallas TX) Huang Steve S. (Richardson TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Semiconductor wafer heater with infrared lamp module with light blocking means.
Anderson Roger N. (San Jose CA) Hey H. Peter W. (San Jose CA) Beinglass Israel (Sunnyvale CA) Venkatesan Mahalingam (San Jose CA), Semiconductor wafer process chamber with susceptor back coating.
Anderson Roger N. (San Jose CA) Hey H. Peter W. (San Jose CA) Beinglass Israel (Sunnyvale CA) Venkatesan Mahalingam (San Jose CA), Semiconductor wafer process chamber with suspector back coating.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.
Bowman Russell (San Jose CA) Anderson Roger N. (San Jose CA), Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus.
Nakagawa Toshiyuki (Fuchu JPX) Takahashi Nobuyuki (Fuchu JPX) Akimoto Takashi (Fuchu JPX), Temperature control system for semiconductor wafer or substrate.
Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
Moslehi Mehrdad M. (Palo Alto CA) Saraswat Krishna C. (Santa Clara County CA), Thermal/microwave remote plasma multiprocessing reactor and method of use.
Adams David V. (San Jose) Anderson Roger N. (Santa Clara) Deacon Thomas E. (San Jose CA), Thermally processing semiconductor wafers at non-ambient pressures.
Inoue, Satoshi; Shimoda, Tatsuya; Miyazawa, Wakao, Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus.
Hauser John R. (Raleigh NC) Sorrell Furman Y. (Cary NC) Wortman Jimmie J. (Chapel Hill NC), Three-zone rapid thermal processing system utilizing wafer edge heating means.
Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing apparatus.
Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing method.
Carlson, David Keith; Kuppurao, Satheesh; Beckford, Howard; Diniz, Herman; Patalay, Kailash Kiran; Burrows, Brian Hayes; Campbell, Jeffrey Ronald; Zhu, Zouming; Li, Xiaowei; Sanchez, Errol Antonio, Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.