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Flexible circuit having overvoltage protection 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01C-007/10
출원번호 UP-0679061 (2007-02-26)
등록번호 US-7609141 (2009-11-10)
발명자 / 주소
  • Harris, Edwin James
  • Pachla, Timothy
  • Vyas, Tushar
출원인 / 주소
  • Littelfuse, Inc.
대리인 / 주소
    Duane Morris LLP
인용정보 피인용 횟수 : 22  인용 특허 : 172

초록

A first voltage variable material ("VVM") includes an insulative binder, first conductive particles with a core and a shell held in the insulating binder and second conductive particles without a shell held in the insulating binder; a second VVM includes an insulating binder, first conductive partic

대표청구항

The invention is claimed as follows: 1. A flexible circuit having overvoltage protection comprising: a first flexible layer; a plurality of signal conductors applied to the first flexible layer; at least one ground conductor positioned adjacent to at least one of the signal conductors; a layer of v

이 특허에 인용된 특허 (172)

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  9. Kosowsky, Lex; Fleming, Robert, Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same.
  10. Kosowsky, Lex; Fleming, Robert, Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same.
  11. Kosowsky, Lex; Fleming, Robert, Geometric configuration or alignment of protective material in a gap structure for electrical devices.
  12. Kosowsky, Lex; Fleming, Robert, Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles.
  13. Kosowsky, Lex; Fleming, Robert, Method for electroplating a substrate.
  14. Kosowsky, Lex, Methods for fabricating current-carrying structures using voltage switchable dielectric materials.
  15. Biskeborn, Robert G.; Gentrup, Myron H.; Iben, Icko E. T.; Lam, Ho-Yiu, Protection of device from electrostatic discharge (ESD) damage.
  16. Biskeborn, Robert G.; Gentrup, Myron H.; Iben, Icko E. T.; Lam, Ho-Yiu, Protection of device from electrostatic discharge (ESD) damage.
  17. Kosowsky, Lex, Semiconductor devices including voltage switchable materials for over-voltage protection.
  18. Fleming, Robert; Kosowsky, Lex; Shang, Shurui; Graydon, Bhret; Chen, Xiaofeng; Irvin, Glen, Substrates having voltage switchable dielectric materials.
  19. Kosowsky, Lex; Graydon, Bhret; Moustafaev, Djabbar; Shang, Shurui; Fleming, Robert, Substrates having voltage switchable dielectric materials.
  20. Shang, Shurui; Fleming, Robert, Substrates having voltage switchable dielectric materials.
  21. Kosowsky, Lex; Fleming, Robert; Wu, Junjun; Saraf, Pragnya; Ranganathan, Thangamani, Voltage switchable dielectric material containing conductive core shelled particles.
  22. Kosowsky, Lex; Fleming, Robert, Voltage switchable dielectric material having bonded particle constituents.
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