초록 ▼

The invention relates to a high-dielectric constant metal/ceramic/polymer composite material and a method for producing an embedded capacitor. As ceramic particles having a relatively small size are bound to the surface of metal particles having a relatively large size by mixing, the occurrence of p

The invention relates to a high-dielectric constant metal/ceramic/polymer composite material and a method for producing an embedded capacitor. As ceramic particles having a relatively small size are bound to the surface of metal particles having a relatively large size by mixing, the occurrence of percolation can be prevented without coating the metal particles, and at the same time, the capacitance of an embedded capacitor can be increased. In addition, a process for coating the surface of the metal particles can be omitted, thus contributing to the simplification of the overall preparation procedure.

대표청구항 ▼

What is claimed is: 1. A composite dielectric material comprising a resin, metal particles and ceramic particles wherein the metal particles have an average diameter of 0.1-7.5 μm and the ceramic particles have an average diameter of below 50% of that of the metal particles, and wherein the ce

What is claimed is: 1. A composite dielectric material comprising a resin, metal particles and ceramic particles wherein the metal particles have an average diameter of 0.1-7.5 μm and the ceramic particles have an average diameter of below 50% of that of the metal particles, and wherein the ceramic particles are bound to the surface of the metal particles. 2. The composite dielectric material according to claim 1, wherein the metal particles have a rough surface and a surface roughness of 0.01 to 0.5 microns. 3. The composite dielectric material according to claim 1, wherein the metal is selected from the group consisting of Cu, Ni, Ag, Al, Zn, Co, Fe, Cr, Mn, and mixtures thereof. 4. The composite dielectric material according to claim 1, wherein the ceramic particles are particles of at least one ferroelectric material selected from the group consisting of BaTiO3, PbTiO3, CaTiO3, SrTiO3, PMN, PMN-PT, PZT, PZN-PT and PMT-PT. 5. The composite dielectric material according to claim 1, wherein the ceramic particles are present in an amount of 1-40% by volume. 6. A capacitor using the composite dielectric material according to any one of claims 1 to 5. 7. A multilayer printed circuit board in which the capacitor according to claim 6 is formed in a circuit. 8. A module substrate comprising the capacitor according to claim 6 embedded therein and a semiconductor chip mounted thereon. 9. A composite dielectric material comprising a resin, metal particles in an amount of 1-30% by volume and ceramic particles, wherein the ceramic particles are bound to the surface of the metal particles. 10. A composite dielectric material comprising a resin, metal particles and ceramic particles, wherein the ceramic particles are bound to the surface of the metal particles, and wherein the ceramic particles are doped with an additive selected from oxides (2+, 3+ and 5+) of Mn, Mg, Sr, Ca, Y and Nb, oxides of lanthanide elements Ce, Dy, Ho, Yb and Nd, and mixtures thereof. 11. A method for preparing a composite dielectric material by mixing 1-30% by volume of metal particles and 1-40% by volume of ceramic particles in 30-98% by volume of a resin, and ball milling the mixture to bind the ceramic particles having a relatively low ductility to the metal particles have a relatively high ductility. 12. The method according to claim 11, wherein the resin is selected from polymethylmethacrylate (PMMA), epoxy resins, bisphenol A type epoxy resins, novolac type epoxy resins, polyfunctional epoxy resins, and combinations thereof. 13. The method according to claim 11, wherein the metal is selected from the group consisting of Cu, Ni, Ag, Al, Zn, Co, Fe, Cr, Mn, and mixtures thereof. 14. The method according to claim 11, wherein the ceramic particles are particles of at least one ferroelectric material selected from the group consisting of BaTiO3, PbTiO3, CaTiO3, SrTiO3, PMN, PMN-PT, PZT, PZN-PT, and PMT-PT. 15. The method according to claim 11, wherein the metal particles have an average diameter of 0.1-7.5 μm and the ceramic particles have an average diameter below 50% of that of the metal particles. 16. Composite dielectric material comprising 1-30% by volume of metal particles and 1-40% by volume of ceramic particles in 30-98% by volume of a resin, wherein the ceramic particles are bound to the surface of the metal particles. 17. The composite dielectric material according to claim 16, wherein the metal particles have a rough surface and a surface roughness of 0.01 to 0.5 microns. 18. The composite dielectric material according to claim 16, wherein the metal is selected from the group consisting of Cu, Ni, Ag, Al, Zn, Co, Fe, Cr, Mn, and mixtures thereof. 19. The composite dielectric material according to claim 16, wherein the metal particles are present in an amount of 1-30% by volume. 20. The composite dielectric material according to claim 16, wherein the ceramic particles are particles of at least one ferroelectric material selected from the group consisting of BaTiO3, PbTiO3, CaTiO3, SrTiO3, PMN, PMN-PT, PZT, PZN-PT and PMT-PT. 21. The composite dielectric material according to claim 16, wherein the ceramic particles are doped with an additive selected from oxides (2+, 3+, and 5+) of Mn, Mg, Sr, Ca, Y and Nb, oxides of lanthanide elements Ce, Dy, Ho, Yb and Nd, and mixtures thereof. 22. The composite dielectric material according to claim 16, wherein the ceramic particles are present in an amount of 1-40% by volume. 23. The composite dielectric material according to claim 16, wherein the metal particles have an average diameter of 0.1-7.5 μm and the ceramic particles have an average diameter below 50% of that of the metal particles. 24. A capacitor using the composite dielectric material according to claim 16. 25. A multilayer printed circuit board in which the capacitor according to claim 24 is formed in a circuit. 26. A module substrate comprising the capacitor according to claim 24 embedded therein and a semiconductor chip mounted thereon.