초록

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

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What is claimed is: 1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni

What is claimed is: 1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising a triethanolamine salt of lauryl sulfate. 2. The electroless deposition composition of claim 1 wherein the triethanolamine salt of lauryl sulfate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 3. The electroless deposition composition of claim 1 further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO32-, HSO3-, hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 4. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an ammonium laureth sulfate. 5. The electroless deposition composition of claim 4 wherein the ammonium laureth sulfate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 6. The electroless deposition composition of claim 4 further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO32-, HSO3-, hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 7. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an alkyldiphenyloxide disulfonate. 8. The electroless deposition composition of claim 7 wherein the alkyldiphenyloxide disulfonate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 9. The electroless deposition composition of claim 7 wherein the leveler is diphenyl oxide disulfonic acid. 10. The electroless deposition composition of claim 7 further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO32-, HSO3-, hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 11. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising a triethanolamine salt of lauryl sulfate. 12. The method of claim 11 wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 13. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an ammonium laureth sulfate. 14. The method of claim 13 wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 15. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an alkyldiphenyloxide disulfonate. 16. The method of claim 15 wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 17. The method of claim 15 wherein the leveler is diphenyl oxide disulfonic acid.