초록 ▼

In a memory device, either a first portion or a second, smaller portion of data retrieved from a storage array is loaded into a data buffer in accordance with a prefetch mode selection and then output from the memory device via a signaling interface. A value that indicates a minimum number of cycles

In a memory device, either a first portion or a second, smaller portion of data retrieved from a storage array is loaded into a data buffer in accordance with a prefetch mode selection and then output from the memory device via a signaling interface. A value that indicates a minimum number of cycles of a clock signal that are to transpire between successive accesses to any one of the storage resources may be received and stored within a configuration circuit of the memory device. If the value indicates a number of clock cycles, N, that is less than a threshold number, the memory device may transfer data associated with a first address between the signaling interface and the data buffer during each of N cycles of the clock signal. If N is greater than or equal to the threshold number, the memory device may transfer the data associated with the first address between the signaling interface and the storage buffer during each of X cycles of the clock signal, and then transfer data associated with the second address between the signaling interface and the storage buffer during each of X cycles of the clock signal, where X is an integer value less than N.

대표청구항 ▼

What is claimed is: 1. An integrated-circuit memory device comprising: a storage array; a read data buffer coupled to the storage array via data lines and having control logic to load data conveyed on all the data lines into the read data buffer in response to assertion of a load signal in a first

What is claimed is: 1. An integrated-circuit memory device comprising: a storage array; a read data buffer coupled to the storage array via data lines and having control logic to load data conveyed on all the data lines into the read data buffer in response to assertion of a load signal in a first prefetch mode and, in a second prefetch mode, to select one of a plurality of subsets of the data lines in response to an address value and to load data conveyed on the address-selected subset of the data lines into the read data buffer in response to assertion of the load signal; and wherein the storage array includes a set of sense amplifiers to store data retrieved from selected storage cells within the storage array and wherein the data lines are coupled between the read data buffer and the set of sense amplifiers. 2. The integrated-circuit memory device of claim 1 further comprising column decoding circuitry to switchably connect all the data lines to respective sense amplifiers within the set of sense amplifiers in the first prefetch mode and to switchably connect the address-selected subset of the data lines to respective sense amplifiers within the set of sense amplifiers in the second prefetch mode. 3. The integrated-circuit memory device of claim 1 wherein the read data buffer includes a plurality of storage elements to store read data, and wherein the control logic includes multiplexer circuitry to switchably connect the address-selected subset of the data lines to a subset of the plurality of storage elements in the second prefetch mode. 4. The integrated-circuit memory device of claim 1 further comprising a programmable register to store a value that establishes either the first prefetch mode or the second prefetch mode within the integrated-circuit memory device. 5. A system comprising: a memory controller; a signaling path coupled to the memory controller; and an integrated-circuit memory device coupled to the signaling path and having: a storage array, a read data buffer coupled to the storage array via data lines and having control logic to load data conveyed on all the data lines into the read data buffer in response to assertion of a load signal in a first prefetch mode and, in a second prefetch mode, to select one of a plurality of subsets of the data lines in response to an address value and to load data conveyed on an address-selected subset of the data lines into the read data buffer in response to assertion of the load signal, and wherein the storage array includes a set of sense amplifiers to store data retrieved from selected storage cells within the storage array and wherein the data lines are coupled between the read data buffer and the set of sense amplifiers. 6. The system of claim 5 wherein the integrated-circuit memory device comprises a programmable register to store a prefetch mode value in response to an instruction from the memory controller, the prefetch mode value establishing either the first prefetch mode or the second prefetch mode within the integrated-circuit memory device. 7. A method of operation within an integrated-circuit memory device having a storage array, a read data buffer and data lines to convey data from the storage array to the read data buffer, the method comprising: in a first prefetch mode, loading data conveyed on all the data lines into the read data buffer in response to assertion of a load signal; in a second prefetch mode, selecting one of a plurality of subsets of the data lines in response to an address value and loading data conveyed on the address-selected subset of the data lines into the read data buffer in response to assertion of the load signal; and outputting the data loaded into the read data buffer from the memory device. 8. Computer-readable storage media comprising: information that includes a description of an integrated circuit memory device, the information including descriptions of: a storage array; data lines coupled to the storage array; and a read data buffer coupled to the storage array via the data lines and having control logic to load data conveyed on all the data lines into the read data buffer in response to assertion of a load signal in a first prefetch mode and, in a second prefetch mode, to select one of a plurality of subsets of the data lines in response to an address value and to load data conveyed on the address-selected subset of the data lines into the read data buffer in response to assertion of the load signal; and wherein the storage array includes a set of sense amplifiers to store data retrieved from selected storage cells within the storage array and wherein the data lines are coupled between the read data buffer and the set of sense amplifiers. 9. An integrated-circuit memory device comprising: a storage array; a read data buffer coupled to the storage array; data lines to convey data from the storage array to the read data buffer; means for loading data conveyed on all the data lines into the read data buffer in response to assertion of a load signal in a first prefetch mode; means for selecting one of a plurality of subsets of the data lines in response to an address value and loading data conveyed on the address-selected subset of the data lines into the read data buffer in response to assertion of the load signal in a second prefetch mode; and means for outputting the data loaded into the read data buffer from the integrated-circuit memory device.