Defectivity and process control of electroless deposition in microelectronics applications
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/02
출원번호
UP-0243876
(2005-10-05)
등록번호
US-7615491
(2009-11-23)
발명자
/ 주소
Chen, Qingyun
Valverde, Charles
Paneccasio, Vincent
Petrov, Nicolai
Stritch, Daniel
Witt, Christian
Hurtubise, Richard
출원인 / 주소
Enthone Inc.
대리인 / 주소
Senniger Powers LLP
인용정보
피인용 횟수 :
2인용 특허 :
35
초록
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
대표청구항▼
What is claimed is: 1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni
What is claimed is: 1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, (b) a reducing agent selected from the group consisting of a phosphorus-based reducing agent, a borane-based reducing agent, and a combination thereof, and (c) an oxygen scavenger selected from the group consisting of SO32-, HSO3-, or a combination thereof. 2. The electroless deposition composition of claim 1 wherein the oxygen scavenger is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 1 g/L. 3. The electroless deposition composition of claim 1 wherein the oxygen scavenger is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 0.3 g/L. 4. The electroless deposition composition of claim 1 further comprising a grain refiner comprising a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof. 5. The electroless deposition composition of claim 1 further comprising a stabilizer compound selected from the group consisting of an aminobenzoic acid, an hydroxybenzoic acid, a molybdenum oxide, a vanadium oxide, a rhenium oxide, salts thereof, derivatives thereof, and combinations thereof. 6. The electroless deposition composition of claim 1 further comprising a leveler selected from the group consisting of diphenyl oxide disulfonic acids, triethanolamine salts of lauryl sulfate, ammonium laureth sulfates, alkylbenzene sulfonates, dodecylbenzene sulfonic acids, alkyldiphenyloxide disulfonate, low molecular weight polypropylene glycol, and combinations thereof. 7. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising: contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, (b) a reducing agent selected from the group consisting of a phosphorus-based reducing agent, a borane-based reducing agent, and a combination thereof, and (c) an oxygen scavenger selected from the group consisting of SO32-, HSO3-, or a combination thereof. 8. The method of claim 7 wherein the oxygen scavenger is present in the electroless deposition composition at a concentration between about 0.01 g/L and about 1 g/L. 9. The method of claim 7 wherein the electroless deposition composition further comprises a grain refiner comprising a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof. 10. The method of claim 7 wherein the electroless deposition composition further comprises a stabilizer compound selected from the group consisting of an aminobenzoic acid, an hydroxybenzoic acid, a molybdenum oxide, a vanadium oxide, a rhenium oxide, salts thereof, derivatives thereof, and combinations thereof. 11. The method of claim 7 wherein the electroless deposition composition further comprises a leveler selected from the group consisting of diphenyl oxide disulfonic acids, triethanolamine salts of lauryl sulfate, ammonium laureth sulfates, alkylbenzene sulfonates, dodecylbenzene sulfonic acids, alkyldiphenyloxide disulfonate, low molecular weight polypropylene glycol, and combinations thereof.
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이 특허에 인용된 특허 (35)
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Beckenbaugh William M. (East Amwell Township ; Hunterdon County NJ) Goldman Patricia J. (Ewing Township ; Mercer County NJ) Morton Kim L. (Delaware Township ; Hunterdon County NJ), Method of depositing a metal on a surface.
Gabe, David R.; Cobley, Andrew J.; Barstad, Leon R.; Kapeckas, Mark J.; Reddington, Erik; Sonnenberg, Wade; Buckley, Thomas, Plating bath and method for depositing a metal layer on a substrate.
Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
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