Tungsten-doped tin-fluorophosphate glasses are described herein which exhibit excellent humidity resistance, thermal resistance, and have a low glass transition temperature which makes them suitable for low temperature sealing applications, such as for encapsulating electronic components. In one emb
Tungsten-doped tin-fluorophosphate glasses are described herein which exhibit excellent humidity resistance, thermal resistance, and have a low glass transition temperature which makes them suitable for low temperature sealing applications, such as for encapsulating electronic components. In one embodiment, these glasses comprise 55-75% Sn, 4-14% P, 6-24% O, 4-22% F, and 0.15-15% W on a weight percent elemental basis.
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What is claimed is: 1. A homogeneous glass comprising: Sn (55-75 wt %) P (4-14 wt %) O (6-24 wt %) F (4-22 wt %) W (0.5-15 wt %) and having a glass transition temperature Tg<160° C. 2. The homogeneous glass of claim 1, wherein a source of said W is tungstic acid (H2WO4). 3. The homogeneous
What is claimed is: 1. A homogeneous glass comprising: Sn (55-75 wt %) P (4-14 wt %) O (6-24 wt %) F (4-22 wt %) W (0.5-15 wt %) and having a glass transition temperature Tg<160° C. 2. The homogeneous glass of claim 1, wherein a source of said W is tungstic acid (H2WO4). 3. The homogeneous glass of claim 1, having a pale coloration which is suitable for sealing light emitting devices. 4. The homogeneous glass of claim 1, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (58-68 wt %) P (5-11 wt %) O (11-21 wt %) F (6-13 wt %) W (1-10 wt %). 5. The homogeneous glass of claim 1, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (59-68 wt %) P (6-11 wt %) O (13-20 wt %) F (6-11 wt %) W (1-6 wt %). 6. The homogeneous glass of claim 1, having a weight gain of less than 2% after exposure to air at atmospheric pressure, a temperature of 85° C., and a moisture content of 85% relative humidity, for a period of at least 1000 hours. 7. An encapsulated article, comprising: a device encapsulated in a homogenous glass including, in weight percent on an elemental basis, 55-75% Sn, 4-14% P, 6-24% O, 4-22% F, and 0.15-15% W, said homogenous glass having a glass transition temperature Tg<160° C. 8. The encapsulated article of claim 7, wherein a source of said W is tungstic acid (H2WO4). 9. The encapsulated article of claim 7, wherein said device is a selected one of: an organic-electronic device including: an OLED; a PLED, a photovoltaic; and a thin film transistor; a thin-film sensor; an optoelectronic device including: an optical switch; and a waveguide; a photovoltaic device; a food container; or a medicine container. 10. A method for encapsulating a device, said method comprising the steps of: depositing a homogeneous glass over at least a portion of said device; and heat treating said homogeneous glass that was deposited over said at least a portion of said device, wherein said homogeneous glass has a glass transition temperature Tg<160° C. and has a composition: Sn (55-75 wt %) P (4-14 wt %) O (6-24 wt %) F (4-22 wt %) W (0.5-15 wt %). 11. The method of claim 10, wherein a source of said W is tungstic acid (H2WO4). 12. The method of claim 10, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (58-68 wt %) P (5-11 wt %) O (11-21 wt %) F (6-13 wt %) W (1-10 wt %). 13. The method of claim 10, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (59-68 wt %) P (6-11 wt %) O (13-20 wt %) F (6-11 wt %) W (1-6 wt %). 14. The method of claim 10, wherein said device is a selected one of: an organic-electronic device including: an OLED; a PLED, a photovoltaic; and a thin film transistor; a thin-film sensor; an optoelectronic device including: an optical switch; and a waveguide; a photovoltaic device; a food container; or a medicine container. 15. A package comprising: a plate; and a sealing glass plate which includes a swelled portion that is a hermetic seal which connects said plate to said sealing glass plate and also creates a gap between said plate and said sealing glass plate, wherein said sealing glass plate has a glass transition temperature Tg<160° C. and has a composition: Sn (55-75 wt %) P (4-14 wt %) O (6-24 wt %) F (4-22 wt %) W (0.5-15 wt %). 16. The package of claim 15, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (58-68 wt %) P (5-11 wt %) O (11-21 wt %) F (6-13 wt %) W (1-10 wt %). 17. The package of claim 15, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (59-68 wt %) P (6-11 wt %) O (13-20 wt %) F (6-11 wt %) W (1-6 wt %). 18. A package comprising: a first plate; a second plate; and a frit made from a homogeneous glass, wherein said frit was heated in a manner that caused said frit to melt and form a hermetic seal which connects said first plate to said second plate, wherein said homogeneous glass has a glass transition temperature Tg<160° C. and has a composition: Sn (55-75 wt %) P (4-14 wt %) O (6-24 wt %) F (4-22 wt %) W (0.5-15 wt %). 19. The package of claim 18, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (58-68 wt %) P (5-11 wt %) O (11-21 wt %) F (6-13 wt %) W (1-10 wt %). 20. The package of claim 18, wherein said homogenous glass has an O/F ratio greater than 0.85 and has a preferred composition: Sn (59-68 wt %) P (6-11 wt %) O (13-20 wt %) F (6-11 wt %) W (1-6 wt %).
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