IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0696693
(2003-10-29)
|
등록번호 |
US-7619263
(2009-11-27)
|
발명자
/ 주소 |
- Shur, Michael
- Ryzhii, Victor
- Gaska, Remigijus
|
출원인 / 주소 |
- Sensor Electronic Technology, Inc.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
6 인용 특허 :
10 |
초록
▼
A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma waves are generated in the carrier gas using a laser pulse. The frequency of the plasma waves, and as a res
A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma waves are generated in the carrier gas using a laser pulse. The frequency of the plasma waves, and as a result, the generated radiation are adjusted using a voltage applied to the semiconducting device.
대표청구항
▼
What is claimed is: 1. A method of managing radiation, the method comprising: providing a semiconducting device having a two-dimensional carrier gas, wherein the semiconducting device comprises at least one of: a heterodimensional diode, a field effect transistor array, a heterodimensional diode ar
What is claimed is: 1. A method of managing radiation, the method comprising: providing a semiconducting device having a two-dimensional carrier gas, wherein the semiconducting device comprises at least one of: a heterodimensional diode, a field effect transistor array, a heterodimensional diode array, or an array of rectifying contacts; exciting the carrier gas by generating a laser pulse with a laser and shining the laser pulse directly onto the semiconducting device, wherein the laser pulse has a duration of approximately twenty femtoseconds; and adjusting a frequency of the radiation to a desired frequency using a voltage applied to the semiconducting device. 2. The method of claim 1, wherein the radiation comprises at least one of: terahertz radiation or microwave radiation. 3. The method of claim 1, wherein the adjusting adjusts at least one of: a gate bias voltage or a drain bias voltage. 4. The method of claim 1, wherein the exciting includes shining the laser pulse onto at least one of: a top side or a bottom side of the semiconducting device. 5. The method of claim 1, wherein a photon energy of the laser pulse exceeds 1.42 electron Volts. 6. A method of generating radiation using a field effect transistor, the method comprising: generating a laser pulse having a duration of approximately twenty femtoseconds with a laser and shining the laser pulse directly onto at least one of: a gate-source spacing, a gate, a gate-drain spacing, or a substrate of the field effect transistor; and adjusting a frequency of the radiation to a desired frequency by adjusting a carrier density of carriers in a channel of the field effect transistor, wherein the adjusting includes adjusting a gate length for the gate. 7. A method of generating radiation using a field effect transistor, the method comprising: generating a laser pulse having a duration of approximately twenty femtoseconds with a laser and shining the laser pulse directly onto the field effect transistor; and adjusting a frequency of the radiation to a desired frequency by adjusting a carrier density of carriers in a channel of the field effect transistor, wherein the field effect transistor comprises a transparent gate, and wherein the laser pulse is shone onto the transparent gate. 8. A method of generating radiation using a field effect transistor, the method comprising: generating a laser pulse having a duration of approximately twenty femtoseconds with a laser and shining the laser pulse directly onto the field effect transistor; and adjusting a frequency of the radiation to a desired frequency by adjusting a carrier density of carriers in a channel of the field effect transistor, wherein the adjusting uses a bias voltage applied to a periodic grating gate of the field effect transistor. 9. A method of generating radiation using a field effect transistor, the method comprising: generating a laser pulse having a duration of approximately twenty femtoseconds with a laser and shining the laser pulse directly onto at least one of: a gate-source spacing, a gate, a gate-drain spacing, or a substrate of the field effect transistor; and adjusting a frequency of the radiation to a desired frequency by adjusting a carrier density of carriers in a channel of the field effect transistor, wherein the radiation comprises at least one of: terahertz radiation or microwave radiation. 10. A method of generating radiation using a field effect transistor, the method comprising: generating a laser pulse with a laser and shining the laser pulse directly onto at least one of: a gate-source spacing, a gate, a gate-drain spacing, or a substrate of the field effect transistor; and adjusting a frequency of the radiation to a desired frequency by adjusting a carrier density of carriers in a channel of the field effect transistor, wherein the laser pulse has a duration of approximately twenty femtoseconds. 11. The method of claim 10, wherein the shining excites plasma oscillations and wherein an active layer in the field effect transistor traps the plasma oscillations as plasma waves. 12. A method of generating radiation using a heterodimensional diode, the method comprising: generating a laser pulse having a duration of approximately twenty femtoseconds with a laser and shining the laser pulse directly onto at least one of a top side or a bottom side of the heterodimensional diode; and adjusting a frequency of the radiation to a desired frequency using a voltage applied to the heterodimensional diode to adjust a frequency of a plasma wave in a two-dimensional carrier gas in the heterodimensional diode. 13. The method of claim 12, further comprising adjusting the frequency of the radiation by using a plurality of heterodimensional diodes. 14. The method of claim 12, wherein the shining shines the laser pulse onto at least one of: a gate, an active layer, or a barrier layer of the heterodimensional diode, the method further comprising generating a second laser pulse with a second laser and shining the second laser pulse directly onto a substrate of the heterodimensional diode. 15. The method of claim 12, wherein the heterodimensional diode includes at least one ohmic contact and at least one rectifying contact. 16. The method of claim 12, wherein the radiation comprises at least one of: terahertz radiation or microwave radiation. 17. A method of managing radiation, the method comprising: providing a field effect transistor having a two-dimensional carrier gas and a periodic grating gate; exciting the carrier gas by generating a laser pulse having a duration of approximately twenty femtoseconds with a laser, and shining the laser pulse directly on the field effect transistor; and adjusting a frequency of the radiation to a desired frequency using a voltage applied to the field effect transistor. 18. A method of managing radiation, the method comprising: providing a semiconducting device having a two-dimensional carrier gas, wherein the semiconducting device comprises at least one of: a heterodimensional diode, a field effect transistor array, a heterodimensional diode array, or an array of rectifying contacts; exciting the carrier gas by shining a laser pulse having a duration of approximately twenty femtoseconds onto the semiconducting device; and adjusting a frequency of the radiation to a desired frequency using a voltage applied to the semiconducting device. 19. A method of managing radiation, the method comprising: providing a field effect transistor having a two-dimensional carrier gas and a periodic grating gate; exciting the carrier gas by generating a laser pulse having a duration of approximately twenty femtoseconds with a laser, and shining the laser pulse directly on the field effect transistor; and adjusting a frequency of the radiation to a desired frequency using a voltage applied to the field effect transistor, wherein the radiation comprises at least one of: terahertz radiation or microwave radiation.
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