초록 ▼

It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing sub

It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a film over a first substrate; forming an element over the film; forming an insulating film over the element; forming a terminal electrode over the insulating film; forming a protective layer over the termi

What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a film over a first substrate; forming an element over the film; forming an insulating film over the element; forming a terminal electrode over the insulating film; forming a protective layer over the terminal electrode; removing a part of the protective layer to expose a part of the terminal electrode; peeling the film, the element, the insulating film, the terminal electrode and the protective layer from the first substrate; pasting a second substrate to the film with an adhesive material; and pressure-bonding an FPC to the part of the terminal electrode so that the terminal electrode is electrically connected to the FPC. 2. A method for manufacturing a semiconductor device according to claim 1, wherein the first substrate is a glass substrate and the second substrate is a flexible plastic film. 3. A method for manufacturing a semiconductor device according to claim 1, wherein the element is a thin film transistor. 4. A method for manufacturing a semiconductor device comprising: forming a metal oxide film over a first substrate; forming an element over the metal oxide film; forming an insulating film over the element; forming a terminal electrode over the insulating film; forming a protective layer over the terminal electrode; removing a part of the protective layer to expose a part of the terminal electrode; peeling the metal oxide film, the element, the insulating film, the terminal electrode, and the protective layer from the first substrate; pasting a second substrate to the metal oxide film with an adhesive material; and pressure-bonding an FPC to the part of the terminal electrode so that the terminal electrode is electrically connected to the FPC. 5. A method for manufacturing a semiconductor device according to claim 4, wherein the first substrate is a glass substrate and the second substrate is a flexible plastic film. 6. A method for manufacturing a semiconductor device according to claim 4, wherein the element is a thin film transistor. 7. A method for manufacturing a semiconductor device according to claim 4, wherein the protective layer is a resin. 8. A method for manufacturing a semiconductor device comprising: forming a metal oxide film over a first substrate; forming an element over the metal oxide film; forming an insulating film over the element; forming a terminal electrode over the insulating film; forming a first protective layer over the terminal electrode; removing a part of the first protective layer to expose a part of the terminal electrode; forming a second protective layer over the first protective layer; removing a part of the first substrate; pasting a third substrate to the second protective layer with a first two-sided tape; pasting a fourth substrate to the first substrate with a second two-sided tape; peeling the metal oxide film, the element, the insulating film, the terminal electrode, the first protective layer and the second protective layer from the first substrate, the second two-sided tape, and the fourth substrate; pasting a second substrate to the metal oxide film with an adhesive material; peeling the metal oxide film, the element, the insulating film, the terminal electrode, and the first protective layer from the third substrate, the first two-sided tape, and the second protective layer; and pressure-bonding an FPC to the part of the terminal electrode so that the terminal electrode is electrically connected to the FPC. 9. A method for manufacturing a semiconductor device according to claim 8, wherein the part of the terminal electrode and the FPC are in contact with an anisotropic conductive film. 10. A method for manufacturing a semiconductor device according to claim 8, wherein the first substrate is a glass substrate and the second substrate is a flexible plastic film. 11. A method for manufacturing a semiconductor device according to claim 8, wherein the element is a thin film transistor. 12. A method for manufacturing a semiconductor device according to claim 8, wherein the first protective layer is a resin. 13. A method for manufacturing a semiconductor device according to claim 1, wherein the protective layer is a resin. 14. A method for manufacturing a semiconductor device according to claim 1, wherein the part of the terminal electrode and the FPC are in contact with an anisotropic conductive film. 15. A method for manufacturing a semiconductor device according to claim 4, wherein the part of the terminal electrode and the FPC are in contact with an anisotropic conductive film.