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A method for bonding two components together including the steps of providing a first component, providing a second component, and locating a first eutectic bonding material between the first and second component. The first eutectic bonding material includes at least one of germanium, tin, or silico

A method for bonding two components together including the steps of providing a first component, providing a second component, and locating a first eutectic bonding material between the first and second component. The first eutectic bonding material includes at least one of germanium, tin, or silicon. The method further includes the step of locating a second eutectic bonding material between the first and second component and adjacent to the first eutectic bonding material. The second eutectic bonding material includes gold. The method further includes the step of heating the first and second eutectic bonding materials to a temperature above a eutectic temperature of an alloy of the first and second eutectic bonding materials to allow a hypoeutectic alloy to form out of the first and second eutectic bonding materials. The method includes the further step of cooling the hypoeutectic alloy to form a solid solution alloy bonding the first and second components together.

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What is claimed is: 1. A method for bonding two components together comprising the steps of: providing a first component; providing a second component; locating a first eutectic bonding material between said first and second component, said first eutectic bonding material comprising at least one of

What is claimed is: 1. A method for bonding two components together comprising the steps of: providing a first component; providing a second component; locating a first eutectic bonding material between said first and second component, said first eutectic bonding material comprising at least one of germanium, tin, or silicon; locating a second eutectic bonding material between said first and second component and adjacent to said first eutectic bonding material, said second eutectic bonding material comprising gold, wherein the first and second bonding materials are provided as separate layers; after locating said first and second bonding materials, heating said first and second eutectic bonding materials to a temperature above a eutectic temperature of an alloy of said first and second eutectic bonding materials to allow a hypoeutectic alloy to form out of said first and second eutectic bonding materials; and forming a solid solution alloy from said hypoeutectic alloy, said solid solution alloy having a generally uniform composition and bonding said first and second components together. 2. The method of claim 1 wherein said first and second components both include a plurality of microstructures located thereon. 3. The method of claim 1 wherein said solid solution alloy has a melting temperature of at least about 361° C. 4. The method of claim 1 wherein said solid solution alloy has a melting temperature of at least about 450° C. 5. The method of claim 1 wherein said solid solution alloy has a melting temperature of at least about 1000° C. 6. The method of claim 1 wherein said solid solution alloy contains at least about 97 atomic percent gold. 7. The method of claim 1 wherein said heating step includes forming a liquid phase at a boundary of said first and second eutectic bonding materials, allowing said liquid phase to grow until substantially all of said first eutectic bonding material is in a liquid state, and allowing said first eutectic bonding material to completely diffuse into said second eutectic bonding material. 8. The method of claim 1 wherein said first and second bonding materials are provided in relative amounts to form a solid solution alloy. 9. The method of claim 1 wherein said first providing step includes providing said first component with a layer of said first and second eutectic bonding materials located thereon and wherein said second providing step includes providing said second component with a layer of said first and second eutectic bonding materials located thereon. 10. The method of claim 9 wherein said locating step includes locating said first and second components such that said first eutectic bonding materials of said first and second components are located adjacent to each other. 11. The method of claim 9 wherein said first providing step includes providing said first component with an adhesion layer and a diffusion-blocking layer located thereon and wherein said first and second eutectic bonding materials of said first component are located on said adhesion layer and said diffusion blocking layer of said first component, and wherein said second providing step includes providing said second component with an adhesion layer and a diffusion-blocking layer located thereon and wherein said first and second eutectic bonding materials of said second component are located on said adhesion layer and said diffusion blocking layer of said second component. 12. The method of claim 1 wherein said first eutectic bonding material is germanium and said second eutectic bonding material is gold, said eutectic temperature is about 361° C., said solid solution alloy has an atomic percentage of germanium of less than about 3% and has a melting temperature of greater than about 450° C. 13. The method of claim 12 wherein said heating step includes heating said first and second eutectic bonding materials to a temperature of at least about 500° C. 14. The method of claim 1 wherein said first and second components are silicon wafers or portions of silicon wafers. 15. The method of claim 1 wherein at least one of said first and second components is a ceramic material. 16. The method of claim 1 wherein said second eutectic bonding material includes a scavenging material which reacts with said first eutectic bonding material and reduces the concentration of said first eutectic bonding material during at least one of said heating step or said step of forming a solid solution alloy. 17. The method of claim 16 wherein said scavenging material is nickel, platinum, or chromium. 18. The method of claim 1 wherein said hypoeutectic alloy has a melting temperature that is at least about 400° C. greater than said temperature to which said first and second eutectic bonding materials are heated during said heating step. 19. A method for bonding two components together comprising the steps of: providing a first component; providing a second component; locating a first and a second eutectic bonding material between said first and second components, wherein the first and second bonding materials are provided as separate layers; after locating said first and second bonding materials, heating said first and second eutectic bonding materials to a temperature less than about 500° C. to allow a hypoeutectic alloy to form out of said first and second eutectic bonding materials; and forming a solid solution alloy from said hypoeutectic alloy, said solid solution alloy bonding said first and second components together in the manner of transient liquid phase eutectic bonding, wherein said solid solution alloy has a generally uniform composition and a melting temperature of greater than about 500° C. 20. The method of claim 19 wherein said first eutectic bonding material is at least one of germanium, tin or silicon, and wherein said second eutectic bonding material is gold. 21. The method of claim 19 wherein said solid solution alloy has at least about 97 atomic percent gold. 22. The method of claim 19 wherein said heating step includes forming a liquid phase at a boundary of said first and second eutectic bonding materials, allowing said liquid phase to grow until substantially all of said first eutectic bonding material is in a liquid state, and allowing said first eutectic bonding material to completely diffuse into said second eutectic bonding material. 23. The method of claim 19 wherein said first and second components are ceramics, silicon wafers or portions of silicon wafers. 24. The method of claim 19 wherein said hypoeutectic alloy has a melting temperature that is at least about 400° C. greater than said temperature to which said first and second eutectic bonding materials are heated during said heating step. 25. A method for bonding two components together comprising the steps of: providing a first component; providing a second component; locating a first and a second eutectic bonding material between said first and second components, wherein the first and second bonding materials are provided as separate layers; after locating said first and second bonding materials, heating said first and second eutectic bonding materials to an elevated temperature to allow a hypoeutectic alloy to form out of said first and second eutectic bonding materials; and forming a generally uniform solid solution from said hypoeutectic alloy, said solid solution alloy bonding said first and second components together, wherein said solid solution alloy has a melting temperature that is at least about 400° C. greater than said elevated temperature. 26. The method of claim 25 wherein said solid solution alloy has a melting temperature that is at least about 500° C. greater than said elevated temperature. 27. The method of claim 25 wherein said solid solution alloy has a melting temperature that is at least about 640° C. greater than said elevated temperature. 28. The method of claim 25 wherein said heating step and said step of forming a solid solution are carried out in the manner of transient liquid phase bonding. 29. The method of claim 1 wherein at least one of said first or second components includes a spacer located thereon, and wherein the method further includes the step of applying compressive pressure to urge said first and second components toward each other, and wherein said spacer limits the movement of said first and second components toward each other when said compressive pressure is applied. 30. The method of claim 1 wherein at least one of said first or second components includes at least one containment well formed therein, and wherein the method includes allowing a liquid form of at least one of said first or second eutectic bonding materials to flow into said at least one containment well. 31. The method of claim 19 wherein at least one of said first or second components includes a spacer located thereon, and wherein the method further includes the step of applying compressive pressure to urge said first and second components toward each other, and wherein said spacer limits the movement of said first and second components toward each other when said compressive pressure is applied. 32. The method of claim 25 wherein at least one of said first or second components includes a spacer located thereon, and wherein the method further includes the step of applying compressive pressure to urge said first and second components toward each other, and wherein said spacer limits the movement of said first and second components toward each other when said compressive pressure is applied.