Methods for the deposition of conductive electronic features
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-005/12
B05D-003/02
출원번호
UP-0265179
(2002-10-04)
등록번호
US-7629017
(2009-12-16)
발명자
/ 주소
Kodas, Toivo T.
Hampden Smith, Mark J.
Vanheusden, Karel
Denham, Hugh
Stump, Aaron D.
Schult, Allen B.
Atanassova, Paolina
Kunze, Klaus
출원인 / 주소
Cabot Corporation
대리인 / 주소
Marsh Fischmann & Breyfogle LLP
인용정보
피인용 횟수 :
19인용 특허 :
105
초록▼
A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the dep
A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes copper metal for the formation of highly conductive copper features.
대표청구항▼
What is claimed is: 1. A method for the fabrication of a conductive feature on a substrate, said method comprising the steps of: (a) providing a precursor composition comprising a copper metal precursor compound, wherein said precursor composition has a viscosity not greater than 1000 centipoise; (
What is claimed is: 1. A method for the fabrication of a conductive feature on a substrate, said method comprising the steps of: (a) providing a precursor composition comprising a copper metal precursor compound, wherein said precursor composition has a viscosity not greater than 1000 centipoise; (b) depositing said precursor composition on said substrate using a direct-write tool; and (c) heating said precursor composition to a conversion temperature of not greater than about 300° C. to form a conductive feature having a resistivity of not greater than about 40 times the resistivity of bulk copper. 2. A method as recited in claim 1, wherein said conversion temperature is not greater than about 250° C. 3. A method as recited in claim 1, wherein said conversion temperature is not greater than about 200° C. 4. A method as recited in claim 1, wherein said conversion temperature is not greater than about 185° C. 5. A method as recited in claim 1, wherein said conductive feature has a minimum feature size of not greater than about 200 μm. 6. A method as recited in claim 1, wherein said conductive feature has a minimum feature size of not greater than about 100 μm. 7. A method as recited in claim 1, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition. 8. A method as recited in claim 1, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition. 9. A method as recited in claim 1, wherein said precursor composition further comprises a second metal precursor compound and wherein said conductive feature comprises a copper metal alloy. 10. A method as recited in claim 1, wherein said copper metal precursor compound comprises Cu-formate. 11. A method as recited in claim 1, wherein said precursor composition comprises an organic complexing agent. 12. A method as recited in claim 1, wherein said precursor composition comprises a complexing agent that is an amine compound. 13. A method as recited in claim 1, wherein said precursor composition comprises a complexing agent that is 3-amino-1-propanol. 14. A method as recited in claim 1, wherein said precursor composition comprises a complexing agent that is a metal precursor compound. 15. A method as recited in claim 1, wherein said precursor composition comprises a complexing agent selected from the group consisting of alcohols, amines, amides, boranes, borohydrates, borohydrides, and organosilanes. 16. A method as recited in claim 1, wherein said precursor composition comprises a crystallization inhibitor. 17. A method as recited in claim 1, wherein said precursor composition comprises a crystallization inhibitor that is ethylene glycol. 18. A method as recited in claim 1, wherein said heating step comprises heating at a rate of at least about 100° C. per minute. 19. A method as recited in claim 1, wherein said heating step comprises heating at a rate of at least about 1000° C. per minute. 20. A method as recited in claim 1, wherein said conductive feature is cooled after said heating step at a cooling rate of at least about 100° C. per minute. 21. A method as recited in claim 1, wherein said conductive feature is cooled after said heating step at a cooling rate of at least about 1000° C. per minute. 22. A method as recited in claim 1, wherein said precursor composition further comprises a surface tension modifier. 23. A method as recited in claim 1, wherein said precursor composition comprises a surface tension modifier that is an alcohol. 24. A method as recited in claim 1, wherein said precursor composition further comprises a reducing agent. 25. A method as recited in claim 1, wherein a reducing agent is formed in-situ in said precursor composition. 26. A method as recited in claim 1, wherein said precursor composition further comprises a reducing agent that is formic acid. 27. A method as recited in claim 1, wherein said precursor composition further comprises a reducing agent that is an amine compound. 28. A method as recited in claim 1, wherein said precursor composition further comprises a reducing agent that is 3-amino-1-propanol. 29. A method as recited in claim 1, wherein said heating step is performed in a reducing atmosphere. 30. A method as recited in claim 1, wherein said heating step is performed in an inert atmosphere. 31. A method as recited in claim 1, wherein said precursor composition further comprises particles. 32. A method as recited in claim 1, wherein said precursor composition further comprises metallic particles. 33. A method as recited in claim 1, wherein said precursor composition further comprises metallic nanoparticles. 34. A method as recited in claim 1, wherein said precursor composition further comprises nanoparticles that are capped with an organic compound. 35. A method as recited in claim 1, wherein said precursor composition further comprises nanoparticles that are capped with an amine-based organic compound. 36. A method as recited in claim 1, wherein said precursor composition further comprises from about 5 weight percent to about 50 weight percent nanoparticles. 37. A method as recited in claim 1, wherein said direct-write tool is selected from the group consisting of an ink-jet device, a syringe and an aerosol jet. 38. A method as recited in claim 1, wherein said direct-write tool is an ink-jet device. 39. A method as recited in claim 1, wherein said heating step comprises heating said precursor composition using a laser. 40. A method as recited in claim 1, wherein said heating step comprises heating said precursor composition in a furnace. 41. A method as recited in claim 1, wherein said conductive feature has a resistivity of not greater than about 20 times the resistivity of bulk copper. 42. A method as recited in claim 1, wherein said conductive feature has a resistivity of not greater than about 10 times the resistivity of bulk copper. 43. A method as recited in claim 1, wherein said conductive feature has a resistivity of not greater than about 6 times the resistivity of bulk copper. 44. A method as recited in claim 1, wherein said precursor composition has a viscosity not greater than 100 centipoise. 45. A method as recited in claim 1, wherein said precursor composition has a viscosity not greater than 50 centipoise. 46. A method as recited in claim 1, wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, cellulose-based materials (i.e. wood or paper), acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile, butadiene (ABS), flexible fiber board, non-woven polymeric fabric, cloth, metallic foil, semiconductors, ceramics, glass and combinations thereof.
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