초록

An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.

대표청구항 ▼

The invention claimed is: 1. A method of conducting atomic layer deposition, comprising, in the sequence set forth: providing a deposition chamber, a draw control chamber located downstream from said deposition chamber, and a draw control gas source; flowing control gas from said draw control gas s

The invention claimed is: 1. A method of conducting atomic layer deposition, comprising, in the sequence set forth: providing a deposition chamber, a draw control chamber located downstream from said deposition chamber, and a draw control gas source; flowing control gas from said draw control gas source into and through said draw control chamber to determine a deposition chamber pressure; conducting a first chemical dosage stage, said first chemical dosage stage comprising flowing a first chemical reactant gas through said deposition chamber at a selected first-dosage flow rate and at a selected first-dosage pressure that is independent of said first-dosage flow rate; conducting a first purge stage by flowing a first purge gas through said deposition chamber at a selected first purge flow rate and at a selected first purge pressure that is independent of said first-purge flow rate; conducting a second chemical dosage stage, said second chemical dosage stage comprising flowing a second chemical reactant gas through said deposition chamber at a selected second-dosage flow rate and at an independently selected second-dosage pressure that is independent of said second-dosage flow rate; and conducting a second purge stage by flowing a second purge gas through said deposition chamber at a selected second purge flow rate and at a selected second purge pressure that is independent of said second purge flow rate. 2. A method as in claim 1 wherein a single purge gas source supplies said first purge gas and said second purge gas. 3. A method as in claim 1 wherein said first purge flow rate is greater than said first-dosage flow rate. 4. A method as in claim 3 wherein a ratio of said first purge flow rate to said first-dosage flow rate exceeds 1.5. 5. A method as in claim 3 wherein a ratio of said first purge flow rate to said first-dosage flow rate exceeds 20. 6. A method as in claim 3 wherein a ratio of said first purge flow rate to said first-dosage flow rate exceeds 100. 7. A method as in claim 1 wherein said second purge flow rate is greater than said second-dosage flow rate. 8. A method as in claim 7 wherein a ratio of said second purge flow rate to said second-dosage flow rate exceeds 1.5. 9. A method as in claim 7 wherein a ratio of said second purge flow rate to said second-dosage flow rate exceeds 20. 10. A method as in claim 7 wherein a ratio of said second purge flow rate to said second-dosage flow rate exceeds 100. 11. A method as in claim 1 wherein said first purge flow rate is greater than said first-dosage flow rate, and said second purge flow rate is greater than said second-dosage flow rate. 12. A method as in claim 1 wherein said conducting said first chemical dosage stage, said first purge stage, said second chemical dosage stage, and said second purge stage in sequence comprises conducting said sequence in less than 3 seconds. 13. A method as in claim 1 wherein said conducting said first chemical dosage stage, said first purge stage, said second chemical dosage stage, and said second purge stage in sequence comprises conducting said sequence in less than 1 second. 14. A method as in claim 1 wherein said conducting said first chemical dosage stage, said first purge stage, said second chemical dosage stage, and said second purge stage in sequence comprises conducting said sequence in less than 0.5 second. 15. A method as in claim 1, further comprising: initiating said first chemical dosage stage by initially flowing said first chemical reactant gas at a first transient flow rate, said first transient flow rate being initially substantially greater than said first-dosage flow rate. 16. A method as in claim 1, further comprising: initiating said second chemical dosage stage by initially flowing said second chemical reactant gas at a second transient flow rate, said second transient flow rate being initially substantially greater than said second-dosage flow rate. 17. A method as in claim 1 wherein said flowing a first chemical reactant gas at a selected first-dosage flow rate and at an independently selected first-dosage pressure comprises: controlling said first-dosage flow rate of said first chemical reactant gas into said deposition chamber; and independently substantially matching a first-chemical draw of said first chemical reactant gas out of said deposition chamber to said first-dosage flow rate; and wherein said flowing said first purge gas through said deposition chamber at said selected first purge flow rate and at said independently selected first purge pressure comprises: controlling said first purge flow rate of said first purge gas into said deposition chamber; and independently substantially matching a first purge-draw of said first purge gas out of said deposition chamber to said first purge flow rate. 18. A method as in claim 17 wherein said independently substantially matching said first-chemical draw of said first chemical reactant gas out of said deposition chamber comprises controlling a first-dosage draw pressure downstream from said deposition chamber; and wherein said independently substantially matching said first purge-draw of said first purge gas out of said deposition chamber comprises controlling a first purge-draw pressure downstream from said deposition chamber. 19. A method as in claim 18 wherein said controlling said first-dosage draw pressure comprises flowing draw gas at a first-dosage draw-gas flow rate through said draw control chamber and controlling said first-dosage draw-gas flow rate to achieve said first-dosage draw pressure, and said controlling said first purge-draw pressure comprises flowing draw gas at a first-purge draw-gas flow rate through said draw control chamber and controlling said first-purge draw-gas flow rate to achieve said first-purge draw pressure. 20. A method as in claim 1 wherein said flowing a first chemical reactant gas at a selected first-dosage flow rate and at an independently selected first-dosage pressure comprises: controlling said first-dosage flow rate of said first chemical reactant gas into said deposition chamber; and independently intentionally generating a mismatch between said first-dosage flow rate and a first-chemical draw of said first chemical reactant gas out of said deposition chamber by controlling a draw pressure downstream from said deposition chamber, so that said first-dosage pressure in said deposition chamber substantially changes during a pressure-transition period to reduce substantially said mismatch, thereby substantially matching said first-chemical draw to said first-dosage flow rate. 21. A method as in claim 1 wherein said flowing a second chemical reactant gas at a selected second-dosage flow rate and at an independently selected second-dosage pressure comprises: controlling said second-dosage flow rate of said second chemical reactant gas into said deposition chamber; and independently substantially matching a second-chemical draw of said second chemical reactant gas out of said deposition chamber to said second-dosage flow rate; and wherein said flowing said second purge gas through said deposition chamber at said selected second purge flow rate and at said independently selected second purge pressure comprises: controlling said second purge flow rate of said second purge gas into said deposition chamber; and independently substantially matching a second purge-draw of said second purge gas out of said deposition chamber to said second purge flow rate. 22. A method as in claim 21 wherein said independently substantially matching said second-chemical draw of said second chemical reactant gas out of said deposition chamber comprises controlling a second-dosage draw pressure downstream from said deposition chamber; wherein said independently substantially matching said second purge-draw of said second purge gas out of said deposition chamber comprises controlling a second purge-draw pressure downstream from said deposition chamber. 23. A method as in claim 22 wherein said controlling said second-dosage draw pressure comprises flowing draw gas at a second-dosage draw-gas flow rate through a draw control chamber and controlling said second-dosage draw-gas flow rate to achieve said second-dosage draw pressure, and said controlling said second purge-draw pressure comprises flowing draw gas at a second-purge draw-gas flow rate through said draw control chamber and controlling said second-purge draw-gas flow rate to achieve said second-purge draw pressure. 24. A method as in claim 1 wherein said flowing a second chemical reactant gas at a selected second-dosage flow rate and at an independently selected second-dosage pressure comprises: controlling said second-dosage flow rate of said second chemical reactant gas into said deposition chamber; and independently intentionally generating a mismatch between said second-dosage flow rate and a second-chemical draw of said second chemical reactant gas out of said deposition chamber by controlling a draw pressure downstream from said deposition chamber, so that said second-dosage pressure in said deposition chamber substantially changes during a pressure-transition period to reduce substantially said mismatch, thereby substantially matching said second-chemical draw to said second-dosage flow rate. 25. A method as in claim 1 wherein said flowing said first chemical reactant gas through said deposition chamber comprises providing a first reactant-gas source having a known first-source pressure, and flowing first chemical reactant gas from said first reactant-gas source through a first-source FRE into said deposition chamber. 26. A method as in claim 25, further comprising: filling a first booster chamber with first chemical reactant gas at substantially said known first-source pressure during a time period not including said first chemical dosage stage, said first booster chamber being located downstream from said first-source FRE and upstream from said deposition chamber; subsequent to filling said first booster chamber, initiating said first chemical dosage stage by opening a first chemical shut-off valve, said first chemical shut-off valve being in serial fluidic communication between said first booster chamber and said deposition chamber, thereby initially flowing said first chemical reactant gas at a first transient flow rate, said first transient flow rate being initially substantially greater than said first-dosage flow rate. 27. A method as in claim 1 wherein said flowing said second chemical reactant gas through said deposition chamber comprises providing a second reactant-gas source having a known second-source pressure, and flowing second chemical reactant gas from said second reactant-gas source through a second-source FRE into said deposition chamber. 28. A method as in claim 27, further comprising: filling a second booster chamber with second chemical reactant gas at substantially said known second-source pressure during a time period not including said second chemical dosage stage, said second booster chamber being located downstream from said second-source FRE and upstream from said deposition chamber; and subsequent to filling said second booster chamber, initiating said second chemical dosage stage by opening a second chemical shut-off valve, said second chemical shut-off valve being in serial fluidic communication between said second booster chamber and said deposition chamber, thereby initially flowing said second chemical reactant gas at a second transient flow rate, said second transient flow rate being initially substantially greater than said second-dosage flow rate.