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특허 상세정보

Techniques for forming shallow junctions

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/425    G21K-005/10   
미국특허분류(USC) 438/215; 438/514; 250/492.21
출원번호 UP-0733467 (2007-04-10)
등록번호 US-7642150 (2010-02-11)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 5  인용 특허 : 13
초록

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

대표
청구항

The invention claimed is: 1. A method for forming shallow junctions, the method comprising the steps of: generating an ion beam comprising molecular ions based on ZnCxFy, wherein Z represents one or more atomic species other than carbon or hydrogen; and causing the ion beam to impact a semiconductor wafer. 2. The method according to claim 1, wherein the impact of the ion beam causes at least one portion of the semiconductor wafer to be amorphized prior to ion implantation of dopants into the semiconductor wafer. 3. The method according to claim 2, ...

이 특허에 인용된 특허 (13)

  1. Kyoichi Suguro JP; Katsuya Okumura JP. Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device. USP2002046365492.
  2. Goto Kenichi,JPX ; Kase Masataka,JPX ; Matsuo Jiro,JPX ; Yamada Isao,JPX ; Takeuchi Daisuke,JPX ; Toyoda Noriaki,JPX ; Shimada Norihiro,JPX. Boron doping by decaborane. USP2000016013332.
  3. Heung Leung K. ; Wicks George G. ; Lee Myung W.. Composition for absorbing hydrogen from gas mixtures. USP1999105965482.
  4. Todd, Michael A.. Dopant precursors and processes. USP2004066743738.
  5. Fuse Genshu (Toyonaka JPX). Large angle ion implantation method. USP1993065223445.
  6. Shepodd Timothy J. (330 Thrasher Ave. Livermore ; Alameda County CA 94550) Phillip Bradley L. (20976 Fairmount Blvd. Shaker Heights ; Cuyahoga County OH 44120). Materials for the scavanging of hydrogen at high temperatures. USP1997045624598.
  7. Syvret,Robert George; Campion,Beth Ann; Cooper,Gregory Alan; Schork,Joan Marie. Method for nitrogen trifluoride production. USP2006016984366.
  8. Sato Hiroya (Tenri JPX) Kinosada Toshiaki (Izumi JPX) Nakagawa Yasuhito (Nara JPX). Method for the production of a semiconductor device by implanting fluorocarbon ions. USP1992105158897.
  9. Matsunaga, Yasuhiko; Foad, Majeed Ali. Method of ion implantation. USP2003066583018.
  10. Ling Peiching ; Tien Tien. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of h. USP1999015863831.
  11. Ling Peiching ; Tien Tien. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility. USP2000086109207.
  12. Ling Peiching ; Tien Tien. Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements o. USP1998065763319.
  13. Kamata Tadashi (3-12-10-406 ; Minami-cho Kokubunji-shi ; Tokyo JPX) Honda Mitsuharu (250 ; Hitachi-wakakusaryo ; 657-5 Nogami ; Ohme-shi ; Tokyo JPX) Sugiura Jun (1-22-16 ; Kichijojihigashi-cho Musas. Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method. USP1993095244820.