|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||438/215; 438/514; 250/492.21|
|발명자 / 주소|
|출원인 / 주소|
|인용정보||피인용 횟수 : 5 인용 특허 : 13|
Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.
The invention claimed is: 1. A method for forming shallow junctions, the method comprising the steps of: generating an ion beam comprising molecular ions based on ZnCxFy, wherein Z represents one or more atomic species other than carbon or hydrogen; and causing the ion beam to impact a semiconductor wafer. 2. The method according to claim 1, wherein the impact of the ion beam causes at least one portion of the semiconductor wafer to be amorphized prior to ion implantation of dopants into the semiconductor wafer. 3. The method according to claim 2, ...