IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0032970
(2005-01-11)
|
등록번호 |
US-7651594
(2010-02-24)
|
우선권정보 |
JP-2002-115774(2002-04-18); JP-2002-115775(2002-04-18) |
발명자
/ 주소 |
- Komada, Minoru
- Kishimoto, Yoshihiro
|
출원인 / 주소 |
- Dai Nippon Printing Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
23 인용 특허 :
1 |
초록
▼
An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the pres
An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm−1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between grains of 30 nm or shorter. Still more, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, has a composition wherein the barrier layer is a silicon oxi-nitride film, and the silicon oxi-nitride film has an atomic ratio in a range of Si:O:N:C=100:60 to 90:60 to 90:20 to 40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration is in a range of 820 to 930 cm−1, a film density is in a range of 2.9 to 3.2 g/cm3, and a distance between grains is 30 nm or shorter.
대표청구항
▼
What is claimed is: 1. A method for manufacturing a barrier film, comprising forming, as a barrier layer, a silicon oxi-nitride film having an atomic ratio of Si100O60-90N60-90C20-40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibrat
What is claimed is: 1. A method for manufacturing a barrier film, comprising forming, as a barrier layer, a silicon oxi-nitride film having an atomic ratio of Si100O60-90N60-90C20-40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration is in a range of 820 to 930 cm−1, a film density in a range of 2.9 to 3.2 g/cm3 and a distance between grains of 30 nm or shorter, on a substrate film which is composed of resin, using silicon nitride (Si3N4) having a sintered density of 60% or higher as a target, in the presence of an oxygen gas by a sputtering method. 2. The method for manufacturing a barrier film according to claim 1, wherein the sputtering method is a RF sputtering method. 3. A method for manufacturing a barrier film, comprising forming, as a barrier layer, a silicon oxi-nitride film having an atomic ratio of Si100O60-90N60-90C20-40, a maximum peak of infrared-ray absorption due to Si—O stretching vibration and Si—N stretching vibration in a range of 820 to 930 cm−1, a film density in a range of 2.9 to 3.2 g/cm3 and a distance between grains of 30 nm or shorter, on a substrate film which is composed of resin, using silicon having an electric resistivity of 0.2 Ωcm or less as a target in the presence of an oxygen gas and a nitrogen gas by a sputtering method. 4. The method for manufacturing a barrier film according to claim 3, wherein the sputtering method is a dual magnetron sputtering method or a RF sputtering method. 5. The method for manufacturing a barrier film according to claim 1, wherein a resin layer is provided on the substrate film in advance, and the barrier layer is formed on the resin layer. 6. The method for manufacturing a barrier film according to claim 3, wherein a resin layer is provided on the substrate film in advance, and the barrier layer is formed on the resin layer.
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