Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-005/12
H01L-021/4763
출원번호
UP-0923037
(2007-10-24)
등록번호
US-7651725
(2010-02-24)
발명자
/ 주소
Yau, Wai-Fan
Cheung, David
Jeng, Shin-Puu
Liu, Kuowei
Yu, Yung-Cheng
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson & Sheridan
인용정보
피인용 횟수 :
3인용 특허 :
106
초록▼
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can a
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
대표청구항▼
What is claimed is: 1. A method for forming an integrated circuit structure, comprising: depositing one or more layers, wherein at least one layer comprises a low dielectric constant material comprising silicon, oxygen, and carbon; defining openings in the one or more layers; lining the openings wi
What is claimed is: 1. A method for forming an integrated circuit structure, comprising: depositing one or more layers, wherein at least one layer comprises a low dielectric constant material comprising silicon, oxygen, and carbon; defining openings in the one or more layers; lining the openings with a dielectric material comprising silicon, oxygen, and carbon; and filling the openings with a conductive material. 2. A method for forming an integrated circuit structure, comprising: depositing a plurality of conformal layers, wherein at least one conformal layer comprises a low dielectric constant material comprising silicon, oxygen, and carbon; defining contact/via openings in the plurality of conformal layers; lining the contact/via openings with a dielectric material comprising silicon, oxygen, and carbon; and filling the contact/via openings with a conductive material. 3. A method for forming an integrated circuit structure, comprising: depositing one or more layers, wherein at least one layer comprises a low dielectric constant material deposited by oxidizing an organo silane compound having the general structure defining openings in the one or more layers; lining the openings with a dielectric material comprising silicon, oxygen, and carbon; and filling the openings with a conductive material. 4. The method of claim 3, wherein the organo silane compound has the structure SiHa(CH3)b(C2H5)c(C6H5)d, where a=1 to 3, b=0 to 3, c=0 to 3, d=0 to 3, and a+b+c+d=4, or the structure Si2He(CH3)f(C2H5)g(C6H5)h, where e=1 to 5, f=0 to 5, g=0 to 5, h=0 to 5, and e+f+g+h=6. 5. The method of claim 3, wherein the organo silane compound has the structure SiHn(CH3)4-n, where n=1 to 3, or the structure Si2Hm(CH3)6-m, where m=1 to 5. 6. The method of claim 3, wherein the organo silane compound is methyl silane.
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Goel Arvind (Buffalo NY) Bray Donald J. (East Amherst NY) Martin Steven C. (Williamsville NY) Blakely Keith A. (Buffalo NY), Capacitive thin films using diamond-like nanocomposite materials.
Haluska Loren A. (Midland MI) Michael Keith W. (Midland MI) Tarhay Leo (Sanford MI), Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors.
O\Neal Harry E. (San Diego CA) Ring Morey A. (San Diego CA) Martin John G. (El Cajon CA), Chemical vapor deposition (CVD) of silicon dioxide films using oxygen-silicon source reactants and a free radical promot.
Farmer Peter H. (Longmeadow MA) Ho Stanley S. (Wilbraham MA) Riek Raymond F. (Wilbraham MA) Woodard Floyd E. (Olivette MO), Composite solar/safety film and laminated window assembly made therefrom.
Vines Landon B. (San Antonio TX) Koenigseder Sigmund A. (San Antonio TX) Cain John L. (Taylor TX) Lee Chang-Ou (San Antonio TX) Fujishiro Felix (San Antonio TX), Densification in an intermetal dielectric film.
Roberts David A. (Carlsbad CA) Hochberg Arthur K. (Solana Beach CA), Deposition of silicon dioxide films at temperatures as low as 100 degree C. by LPCVD using organodisilane sources.
Hochberg Arthur K. (1037 Santa Queta Solana Beach CA 92075) O\Meara David L. (632 S. Freeman Oceanside CA 92054), Deposition of silicon oxide films using alkylsilane liquid sources.
Lane Andrew P. (Westminster TX) Webb Douglas A. (Allen TX) Frederick Gene R. (Mesquite TX), Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride.
Cohen Stephen A. (Wappingers Falls NY) Edelstein Daniel C. (New Rochelle NY) Grill Alfred (White Plains NY) Paraszczak Jurij R. (Pleasantville NY) Patel Vishnubhai V. (Yorktown NY), Diamond-like carbon for use in VLSI and ULSI interconnect systems.
Grill Alfred ; Hummel John Patrick ; Jahnes Christopher Vincent ; Patel Vishnubhai Vitthalbhai ; Saenger Katherine Lynn, Dual damascene processing for semiconductor chip interconnects.
Laxman Ravi K. (Encinitas CA) Hochberg Arthur K. (Solana Beach CA) Roberts David A. (Escondido CA) Vrtis Raymond N. (LaCosta CA), Fluorine doped silicon oxide process.
Petrmichl Rudolph H. (Center Valley PA) Knapp Bradley J. (Kutztown PA) Kimock Fred M. (Macungie PA) Daniels Brian K. (Emmaus PA), Highly abrasion-resistant, flexible coatings for soft substrates.
Petrmichl Rudolph Hugo (Center Valley PA) Knapp Bradley J. (Kutztown PA) Kimock Fred M. (Macungie PA) Daniels Brian Kenneth (Emmaus PA), Highly abrasion-resistant, flexible coatings for soft substrates.
Knapp Bradley J. (Kutztown PA) Kimock Fred M. (Macungie PA) Petrmichl Rudolph H. (Center Valley PA) Galvin Norman D. (Easton PA), Ion beam process for deposition of highly abrasion-resistant coatings.
Petrmichl Rudolph Hugo ; Mahoney Leonard Joseph ; Venable III Ray Hays ; Galvin Norman Donald ; Knapp Bradley J. ; Kimock Fred Michael, Ion beam process for deposition of highly wear-resistant optical coatings.
Okano Haruo (Tokyo JPX) Noguchi Sadahisa (Tokyo JPX) Sekine Makoto (Yokohama JPX), Method for forming a film on a substrate by activating a reactive gas.
Fiordalice Robert W. (Austin TX) Maniar Papu D. (Austin TX) Klein Jeffrey L. (Austin TX), Method for forming inlaid interconnects in a semiconductor device.
Chiang Chien ; Fraser David B., Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections.
Clark Terence J. (Princeton NJ) Hanagan Michael J. (Princeton NJ) Cruse Richard W. (Kendall Park NJ) Szalai Veronika A. (Rocky Hill NJ) Rohman Stephen J. (Plainsboro NJ) Mininni Robert M. (Skillman N, Method for passivating the inner surface by deposition of a ceramic coating of an apparatus subject to coking, apparatus.
Egitto Frank Daniel (Binghamton NY) Matienzo Luis Jesus (Endicott NY) Morrison ; Jr. Bruce Otho (Vestal NY), Method for producing a diffusion barrier and polymeric article having a diffusion barrier.
Chow Melanie M. (Poughquag NY) Cronin John E. (Milton VT) Guthrie William L. (Hopewell Junction NY) Kaanta Carter W. (Essex Junction VT) Luther Barbara (Devon PA) Patrick William J. (Newburgh NY) Per, Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive line.
Bennett Brian R. (Redford MA) Lorenzo Joseph P. (Stow MA) Vaccaro Kenneth (Medford MA), Method for the deposition of high quality silicon dioxide at low temperature.
Antonelli Joseph A. (Riverton NJ) Lin Tyau-Jeen (Chadds Ford PA) Yang Duck J. (Wilmington DE) Yasuda Hirotsugu (Columbia MO), Method of coating metal using low temperature plasma and electrodeposition.
Sato Nobuyoshi (Chiba JPX) Tokunaga Kyoji (Chiba JPX) Katagiri Tomoharu (Chiba JPX) Hashimoto Tsuyoshi (Chiba JPX) Ohta Tomohiro (Chiba JPX), Method of forming interlayer-insulating film using ozone and organic silanes at a pressure above atmospheric.
Foo Pang-Dow (Berkeley Heights NJ) Manocha Ajit S. (Allentown PA) Miner John F. (Piscataway NJ) Pai Chien-Shing (Bridgewater NJ), Method of forming oxide layers by bias ECR plasma deposition.
Havemann Robert H. (Garland TX) Jeng Shin-Puu (Plano TX) Gnade Bruce E. (Rowlett TX) Cho Chih-Chen (Richardson TX), Method of making an interconnect structure with an integrated low density dielectric.
Smits Jacobus W. M. (Eindhoven NLX), Method of providing silicon dioxide layer on a substrate by means of chemical reaction from the vapor phase at a low pre.
Beekman Knut,GBX ; Kiermasz Adrian,GBX ; McClatchie Simon,GBX ; Taylor Mark Philip,GBX ; Timms Peter Leslie,GBX, Methods and apparatus for treating a semiconductor substrate.
Dobuzinsky David M. (Hopewell Junction NY) Matsuda Tetsuo (Poughkeepsie NY) Nguyen Son V. (Hopewell Junction NY) Ryan James G. (Newton CT) Shapiro Michael (Beacon NY), PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element.
Wang David N. (Cupertino CA) White John M. (Hayward CA) Law Kam S. (Union City CA) Leung Cissy (Union City CA) Umotoy Salvador P. (Pittsburg CA) Collins Kenneth S. (San Jose CA) Adamik John A. (San R, Plasma-enhanced CVD process using TEOS for depositing silicon oxide.
Chhabra Navjot (Boise ID) Powell Eric A. (Boise ID) Morgan Rodney D. (Boise ID), Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced.
Friedt Jean-Marie (Tokyo JPX) Claverie Pierre (Tsuchiura JPX) Perrin Jme (Paris FRX), Process for producing a deposit of an inorganic and amorphous protective coating on an organic polymer substrate.
Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
Angelopoulos Marie ; Babich Katherina ; Grill Alfred ; Halle Scott David ; Mahorowala Arpan Pravin ; Patel Vishnubhai Vitthalbhai, Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof.
Sachdev Harbans S. (Wappingers Falls NY) Sachdev Krishna G. (Wappingers Falls NY), Use of plasma polymerized organosilicon films in fabrication of lift-off masks.
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