$\require{mediawiki-texvc}$
  • 검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
  • 검색연산자
검색연산자 기능 검색시 예
() 우선순위가 가장 높은 연산자 예1) (나노 (기계 | machine))
공백 두 개의 검색어(식)을 모두 포함하고 있는 문서 검색 예1) (나노 기계)
예2) 나노 장영실
| 두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색 예1) (줄기세포 | 면역)
예2) 줄기세포 | 장영실
! NOT 이후에 있는 검색어가 포함된 문서는 제외 예1) (황금 !백금)
예2) !image
* 검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색 예) semi*
"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"

특허 상세정보

Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/331    H01L-021/8222   
미국특허분류(USC) 438/312; 438/320; 438/350; 257/197; 257/E21.371
출원번호 UP-0267553 (2005-11-04)
등록번호 US-7651919 (2010-02-24)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Schwegman, Lundberg & Woessner, P.A.
인용정보 피인용 횟수 : 1  인용 특허 : 73
초록

A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; and forming an emitter region over the compound base region including forming a first emitter layer within the emitter region and doping the first emitter layer with a pre-determined percentage of at least one element associated with the compound base region. In one implementation, an emitter region is formed including multiple emitter layers to en...

대표
청구항

We claim: 1. A method for fabricating a heterojunction bipolar transistor (HBT), the method comprising: providing a substrate including a collector region; forming a compound base region over the collector region; and forming a single crystal silicon cap region over the compound base region having an n-type doping level; forming a base electrode above the base region and contacting a peripheral portion of at least one of the compound base region and the single crystal cap region; and forming a compound emitter region over the single crystal silicon cap ...

이 특허에 인용된 특허 (73)

  1. William Pressnall ; Frank D. Poag ; Richard L. Guldi. Apparatus and method for cleaning a vertical furnace pedestal and cap. USP2002096442867.
  2. Strobush Brian L. ; Ludemann Thomas J. ; Yonkoski Roger K.. Apparatus and method for drying a coating on a substrate employing multiple drying subzones. USP1999035881476.
  3. Wang Wen-Yi,TWX ; Chen Yi-Kun,TWX ; Lin Chia-Hsin,TWX ; Chang Wen-Tsam,TWX. Apparatus for disassembling an injector head. USP2001036199255.
  4. Enicks,Darwin Gene; Carver,Damian. Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement. USP2007117300849.
  5. Krutsick, Thomas J.. Bipolar transistor having an emitter comprised of a semi-insulating material. USP2003046555852.
  6. Delage Sylvain (Bures Sur Yvette FRX) Poisson Marie-Antoinette (Paris FRX) Brylinski Christian (Neuilly Sur Seine FRX) Blanck Herve (Arcueil FRX). Bipolar transistor with optimized structure. USP1997095668388.
  7. Tan, Samantha. Cleaning of semiconductor process equipment chamber parts using organic solvents. USP2003086607605.
  8. Delaney Joseph Baxter ; Bracey Kirk Edwin. Collector up heterojunction bipolar transistor. USP1998055757039.
  9. Curran Patrick A. (Plano TX). Composition double heterojunction transistor. USP1988094771326.
  10. Bardina Juan (Menlo Park CA) Gonzalez Mikel (San Jose CA). Decontamination apparatus for semiconductor wafer handling equipment. USP1984034437479.
  11. George Mark (23 N. 12th St. Allentown PA 18102). Delivery of reactive gas from gas pad to process tool. USP1992085137047.
  12. Chu,Jack Oon; Jagannathan,Basanth; Grill,Alfred; Meyerson,Bernard Steele; Ott,John Albrecht. Epitaxial and polycrystalline growth of SiGeCand SiCalloy layers on Si by UHV-CVD. USP2007027183576.
  13. Burghartz Joachim N. (Shrub Oak NY). Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI. USP1996125583059.
  14. Hafizi Madjid. Fully self-aligned submicron heterojunction bipolar transistor. USP1998035729033.
  15. Redemann Eric J. ; Vu Kim N.. Gas panel. USP1999115992463.
  16. Crabbe Emmanuel F. (Chappaqua NY) Harame David L. (Mohegan Lake NY) Meyerson Bernard S. (Yorktown Heights NY) Patton Gary (Poughkeepsie NY) Stork Johannes M. C. (Yorktown Heights NY). Graded bandgap single-crystal emitter heterojunction bipolar transistor. USP1994105352912.
  17. Dubon-Chevallier Chantal (Chatillon FRX) Dangla Jean (Les Ulis FRX) Benchimol Jean-Louis (Palaiseau FRX) Alexandre Francois (Vitry Sur Seine FRX). Heterojunction bipolar transistor. USP1995055412233.
  18. Frei, Michel Ranjit; King, Clifford Alan; Ma, Yi; Mastrapasqua, Marco; Ng, Kwok K. Heterojunction bipolar transistor. USP2003016509242.
  19. Lunardi Leda M. (New Providence) Malik Roger J. (Warren) Ryan Robert W. (Piscataway NJ). Heterojunction bipolar transistor. USP1991035001534.
  20. Nii Keita (Kyoto JPX). Heterojunction bipolar transistor. USP1993095247192.
  21. Oda Katsuya,JPX ; Ohue Eiji,JPX ; Onai Takahiro,JPX ; Washio Katsuyoshi,JPX. Heterojunction bipolar transistor. USP1999105962880.
  22. Toyoda, Kenji; Yuki, Koichiro; Takagi, Takeshi; Ohnishi, Teruhito; Kubo, Minoru. Heterojunction bipolar transistor. USP2004076759697.
  23. Washio, Katsuyoshi; Hayami, Reiko; Shimamoto, Hiromi; Kondo, Masao; Oda, Katsuya; Oue, Eiji; Tanabe, Masamichi. Heterojunction bipolar transistor. USP2003076600178.
  24. Ozkan, Cengiz S.; Salmi, Abderrahmane. Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe). USP2003036531369.
  25. Moll, Nicolas J.; Houng, Yu-Min. Heterojunction bipolar transistor (HBT) having an improved emitter-base junction. USP2004026696710.
  26. Nakagawa Atsushi (Katano JPX). Heterojunction bipolar transistor and its integration method. USP1994075329145.
  27. Yoshioka, Akira; Nozu, Tetsuro. Heterojunction bipolar transistor and its manufacturing method. USP2004066756615.
  28. Suzumura, Isao; Oda, Katsuya; Washio, Katsuyoshi. Heterojunction bipolar transistor and method for production thereof. USP2003126667489.
  29. Torvik, John Tarje; Pankove, Jacques Isaac. Heterojunction bipolar transistor containing at least one silicon carbide layer. USP2005036870204.
  30. Yamazaki Toru (Tokyo JPX). Heterojunction bipolar transistor having particular Ge distributions and gradients. USP1995085440152.
  31. Chau, Hin Fai; Dunnrowicz, Clarence John; Chen, Yan; Lee, Chien Ping. Heterojunction bipolar transistor having wide bandgap material in collector. USP2004106806513.
  32. El-Sharawy El-Badawy Amien ; Hashemi Majid M.. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction. USP1999065912481.
  33. Smith Colin (Bawdsey GB2) Welbourn Anthony D. (Ipswich GB2). Heterojunction bipolar transistor with SiGe. USP1991045006912.
  34. Morizuka Kouhei (Yokohama JPX). Heterojunction bipolar transistor with base electrode having Schottky barrier contact to the emitter. USP1994075331186.
  35. Huang, Feng-Yi. Heterojunction bipolar transistor with silicon-germanium base. USP2003066573539.
  36. Imai Kiyotaka (Tokyo JPX). Heterojunction bipolar transistor with silicon-germanium base. USP1996045506427.
  37. Babcock, Jeffrey A.; Pinto, Angelo; Howard, Gregory E.. Lateral heterojunction bipolar transistor. USP2004096794237.
  38. Paul Francis Grosshart. Manifold for modular gas box system. USP2002026349744.
  39. Hardin George T. (Knoxville TN). Manifolding means for electrical and/or pneumatic control units and parts and methods therefor. USP1982104352532.
  40. Malik, Roger J.. Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process. USP2003046541346.
  41. Enicks,Darwin Gene. Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement. USP2008107439558.
  42. Harris James M. ; Selser Michael J. ; Weber Walter A.. Method for attaching a micromechanical device to a manifold, and fluid control system produced thereby. USP2001126325886.
  43. Arai Masatoshi,JPX ; Segawa Mizuki,JPX ; Yabu Toshiki,JPX. Method for fabricating a semiconductor device having a nitrogen diffusion layer. USP1999105972783.
  44. Ryum Byung-Ryul,KRX ; Han Tae-Hyeon,KRX ; Cho Deok-Ho,KRX ; Lee Soo-Min,KRX ; Pyun Kwang-Eui,KRX. Method for fabricating heterojunction bipolar transistor. USP1998085798277.
  45. Klaus F. Schuegraf. Method for fabricating lateral PNP heterojunction bipolar transistor and related structure. USP2002106459104.
  46. U'Ren, Gregory D.. Method for fabrication of emitter of a transistor and related structure. USP2004096797578.
  47. Shideler, Jay A.. Method for forming a SiGe heterojunction bipolar transistor having reduced base resistance. USP2005036861323.
  48. Hafizi Madjid (Santa Monica CA) Stanchina William E. (Thousand Oaks CA). Method for making fully self-aligned submicron heterojunction bipolar transistor. USP1997095665614.
  49. Ahlgren David (Wappingers Falls NY) Chu Jack (Long Island City NY) Revitz Martin (Poughkeepsie NY) Ronsheim Paul (Wappingers Falls NY) Saccamango Mary (Patterson NY) Sunderland David (Hopewell Juncti. Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile. USP1997085656514.
  50. Meyerson Bernard S. (Yorktown Heights NY). Method of dopant enhancement in an epitaxial silicon layer by using germanium. USP1994055316958.
  51. Schuppen Andreas,DEX ; Dietrich Harry,DEX ; Konig Ulf,DEX. Method of fabricating a heterobipolar transistor. USP1998105821149.
  52. Mohammad S. Noor (Hopewell Junction NY). Method of fabricating a triple heterojunction bipolar transistor. USP1996065523243.
  53. Hsu, Sheng Teng; Tweet, Douglas James; Ulrich, Bruce Dale; Ying, Hong. Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate. USP2003046555874.
  54. Kalnitsky, Alexander; Rowlandson, Michael; Liao, Ken; Scheer, Robert F.. Method of forming a super self-aligned hetero-junction bipolar transistor. USP2005036861324.
  55. El-Sharawy El-Badawy Amien ; Hashemi Majid M.. Method of forming heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction. USP2001016171920.
  56. Chang, Charles E.; Pierson, Richard L.; Zampardi, Peter J.; Asbeck, Peter M.. Methods and apparatus for a composite collector double heterojunction bipolar transistor. USP2003056563145.
  57. Ellie Yieh ; Li-Qun Xia ; Srinivas Nemani. Methods and apparatus for shallow trench isolation. USP2002036352591.
  58. Rubin Richard H. (Fairfield NJ) Petrone Benjamin J. (Netcong NJ) Heim Richard C. (Mountain View CA) Pawenski Scott M. (Wappingers Falls NY). Modular processing apparatus for processing semiconductor wafers. USP1989084852516.
  59. Morgan, Rodney D.. Multiple connection socket assembly for semiconductor fabrication equipment and methods employing same. USP2003076598279.
  60. Rench Michael E. (Garland TX) Schilling Ted D. (Rowlett TX). Multiple valve assembly and process. USP1995095449294.
  61. Feng-Yi Huang. Process for forming a silicon-germanium base of a heterojunction bipolar transistor. USP2002076417059.
  62. Huang Feng-Yi. Process for forming a silicon-germanium base of heterojunction bipolar transistor. USP2001066251738.
  63. Sakurai Shinya,JPX ; Kobayashi Yukio,JPX. Process for producing surface-modified rubber, surface-modified rubber, and sealing material. USP2000066074698.
  64. Imai Kiyotaka (Tokyo JPX). Process of producing heterojunction bipolar transistor with silicon-germanium base. USP1996025494836.
  65. Moslehi Mehrdad M. (Dallas TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX). Programmable multizone gas injector for single-wafer semiconductor processing equipment. USP1995095453124.
  66. Lorenz, Andrew K.; Mobley, Scott R.. Purging apparatus. USP1983054383547.
  67. Wu Beuan P. F.,TWX. Semiconductor device fabrication system. USP2000086099599.
  68. Jeffrey B. Casady ; Michael S. Mazzola ; Stephen E. Saddow. Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications. USP2002066410396.
  69. Lanzerotti, Louis D.; Ronan, Brian P.; Voldman, Steven H.. Silicon germanium heterojunction bipolar transistor with carbon incorporation. USP2003126670654.
  70. Loechelt, Gary H.. Structure and method of making a high performance semiconductor device having a narrow doping profile. USP2004076764918.
  71. Mohammad S. Noor (Hopewell Junction NY). Triple heterojunction bipolar transistor. USP1995065426316.
  72. Danner ; Jr. Harold J. (117 Oravetz Rd. Auburn WA 98002) Holmes William B. (15454 - 139th Ave. SE. Renton WA 98058) Barron Wesley (5000 Dairy Rd. Kamloops ; B.C. CAX). Vacuum insulated container. USP1994055316171.
  73. El-Badawy Amien El-Sharawy ; Majid M. Hashemi. Vertical heterojunction bipolar transistor. USP2002076423990.