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Process for electroless copper deposition

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
  • H01L-021/3205
  • H01L-021/4763
출원번호 UP-0385037 (2006-03-20)
등록번호 US-7651934 (2010-02-24)
발명자 / 주소
  • Lubomirsky, Dmitry
  • Weidman, Timothy W.
  • Shanmugasundram, Arulkumar
  • Kovarsky, Nicolay Y.
  • Wijekoon, Kapila
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan
인용정보 피인용 횟수 : 16  인용 특허 : 144

초록

Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper e

대표청구항

The invention claimed is: 1. A method for forming a conductive material within a feature on a substrate comprising: depositing a seed layer selectively onto a bottom surface of a feature on a substrate while sidewalls of the feature remain substantially free of the seed layer during a collimated ph

이 특허에 인용된 특허 (144)

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이 특허를 인용한 특허 (16)

  1. Richardson, Thomas B.; Shao, Wenbo; Lin, Xuan; Wang, Cai; Paneccasio, Jr., Vincent; Abys, Joseph A.; Zhang, Yun; Hurtubise, Richard; Wang, Chen, Copper filling of through silicon vias.
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