초록 ▼

Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target. Embodiments of a sputtering target assembly with welded sputtering target tiles are also provided. In one embodiment, a method for welding sputtering target tiles in an electron beam w

Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target. Embodiments of a sputtering target assembly with welded sputtering target tiles are also provided. In one embodiment, a method for welding sputtering target tiles in an electron beam welding chamber comprises providing strips or powder of sputtering target material on a pre-determined at least one interfacial line between at least two sputtering target tiles, that are yet to be placed, on a surface of support, placing the at least two sputtering target tiles side by side with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line on top of the strips or powder of sputtering target material, pumping out the gas in the electron beam welding chamber, preheating the at least two sputtering target tiles and the strips or powder of sputtering target material to a pre-heat temperature less than the temperature at which the at least two target tiles begin to melt, undergo a change in physical state, or undergo substantial decomposition, and welding the at least two sputtering target tiles placed side by side into a large sputtering target.

대표청구항 ▼

What is claimed is: 1. A method for welding sputtering target tiles, comprising: placing at least two sputtering target tiles side by side on a surface of support with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line; placing strips or powder of s

What is claimed is: 1. A method for welding sputtering target tiles, comprising: placing at least two sputtering target tiles side by side on a surface of support with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line; placing strips or powder of sputtering target material under the at least one interfacial line between the at least two target tiles before welding the at least two sputtering target tiles; and welding the at least two sputtering target tiles placed side by side into a sputtering target. 2. The method of claim 1, wherein the gap spacing of the at least one interfacial line between the edges of the at least two sputtering target tiles is less than 0.5 mm. 3. The method of claim 1, wherein the gap spacing of the at least one interfacial line between the edges of the at least two sputtering target tiles is less than 0.05 mm. 4. The method of claim 1, wherein the welding is selected from the group consisting of electron beam welding, laser welding and friction stir welding. 5. The method of claim 1, further comprising: pre-heating the at least two sputtering target tiles and the strips or powder of sputtering target material placed under the at least one interfacial line between the at least two target tiles before welding to a pre-heat temperature less than the temperature at which target tiles begin to melt, undergo a change in physical state, or undergo substantial decomposition. 6. The method of claim 5, wherein the at least two sputtering target tiles and the strips or powder of sputtering target material placed under the at least one interfacial line between the at least two target tiles are pre-heated to at least one half of the melting temperature of the sputtering target material. 7. The method of claim 6, wherein the at least two sputtering target tiles and the strips or powder of sputtering target material placed under the at least one interfacial line between the at least two target tiles are pre-heated to at least three fifths of the melting temperature of the sputtering target material. 8. The method of claim 4, wherein the welding technique is electron beam welding and the welding is performed at a pressure less than 10−4 Torr. 9. The method of claim 1, wherein the sputtering target material is selected from the group consisting of aluminum, copper, gold, nickel, tin, molybdenum, chromium, zinc, palladium, stainless steel, palladium alloys, tin alloy, aluminum alloy, copper alloy, and indium tin oxide (ITO). 10. The method of claim 1, wherein the sputtering surface area of the sputtering target is greater than 10,000 cm2. 11. A method for welding sputtering target tiles in an electron beam welding chamber, comprising: providing strips or powder of sputtering target material on a pre-determined at least one interfacial line between at least two sputtering target tiles on a surface of support; placing the at least two sputtering target tiles side by side with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line on top of the strips or powder of sputtering target material; pumping out the gas in the electron beam welding chamber; preheating the at least two sputtering target tiles and the strips or powder of sputtering target material to a pre-heat temperature less than the temperature at which the at least two target tiles begin to melt, undergo a change in physical state, or undergo substantial decomposition; and welding the at least two sputtering target tiles placed side by side into a large sputtering target. 12. The method of claim 11, wherein the gap spacing of the pre-determined at least one interfacial line between the abutting edges of the at least two sputtering target tiles is less than 0.05 mm. 13. The method of claim 11, wherein the at least two sputtering target tiles and the strips or powder of sputtering target material placed under the pre-determined at least one interfacial line between the at least two target tiles are preheated to at least three fifths of the melting temperature of the sputtering target material. 14. The method of claim 11, wherein the welding is performed at a pressure less than 10−4 Torr. 15. The method of claim 11, wherein the sputtering target material is selected from the group consisting of aluminum, copper, gold, nickel, tin, molybdenum, chromium, zinc, palladium, stainless steel, palladium alloys, tin alloy, aluminum alloy, copper alloy, and indium tin oxide (ITO). 16. The method of claim 11, wherein the sputtering surface area of the sputtering target is greater than 750 cm2.