초록 ▼

On a GaAs substrate 1, a light emitting part 4, an intermediate layer 5 of AlGaInP and a current spreading layer 6 are sequentially formed. The light emitting part 4 includes a first conductivity type AlGaInP based lower cladding layer 41, an AlGaInP based light emitting layer 42, and a second condu

On a GaAs substrate 1, a light emitting part 4, an intermediate layer 5 of AlGaInP and a current spreading layer 6 are sequentially formed. The light emitting part 4 includes a first conductivity type AlGaInP based lower cladding layer 41, an AlGaInP based light emitting layer 42, and a second conductivity type AlGaInP based upper cladding layer 43 sequentially formed on the GaAs substrate 1. In each layer of the light emitting part 4, a hydrogen concentration is not more than 2×1017 cm−3, a carbon concentration is not more than 2×1016 cm−3, and an oxygen concentration is not more than 2×1016 cm−3. In a partial region or in a total region of the current-spreading layer 6, a hydrogen concentration is not more than 5×1017 cm−3, a carbon concentration is not more than 5×1017 cm−3, and an oxygen concentration is not more than 2×1016 cm−3.

대표청구항 ▼

What is claimed is: 1. A light emitting diode comprising: a first conductivity type GaAs substrate; a Bragg reflection layer comprising at least two kinds of materials having different Al compositions, each of which is selected from a first conductivity type Alx0Ga1−x0As (0≦x0≦

What is claimed is: 1. A light emitting diode comprising: a first conductivity type GaAs substrate; a Bragg reflection layer comprising at least two kinds of materials having different Al compositions, each of which is selected from a first conductivity type Alx0Ga1−x0As (0≦x0≦1); a lower cladding layer comprising a first conductivity type (Alx1Ga1−x1)y1In1−y1P (0≦x1≦1, 0.4≦y1 ≦0.6); a light emitting layer comprising an intrinsic semiconductor layer having a multiquantum well structure comprising an (Alx2Ga1−x2)y2In1−y2P (0≦x2≦1, 0.4≦y2≦0.6); an upper cladding layer comprising a second conductivity type (Alx3Ga1−x3)y3In1−y3P (0≦x3≦1, 0.4≦y3≦0.6); and a current spreading layer comprising a second conductivity type GaP layer; wherein a first hydrogen concentration is not more than 2×1017 cm−3, a first carbon concentration is not more than 2×1016 cm−3, and a first oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer, and a second hydrogen concentration is not more than 5×1017 cm−3, a second carbon concentration is not more than 5×1017 cm−3, and a second oxygen concentration is not more than 2×1016 cm−3 in a partial region or in a total region of the current-spreading layer. 2. The light emitting diode according to claim 1, further comprising: an intermediate layer provided between the upper cladding layer and the current-spreading layer, the intermediate layer comprising (Alx7Ga1−x7)y7In1−y7P (0≦x7≦1, 0≦y7≦1) doped with a second conductivity type dopant having a concentration higher than that of a second conductivity type dopant in the upper cladding layer; wherein a third hydrogen concentration is not more than 1×1018 cm−3, a third carbon concentration is not more than 1×1018 cm−3, and a third oxygen concentration is not more than 5×1016 cm−3 in the intermediate layer. 3. The light emitting diode according to claim 2, wherein: the concentration of the second conductivity type dopant of the intermediate layer is not less than 5×1017 cm−3, and the intermediate layer further includes a first conductivity type dopant having a concentration lower than that of the second conductivity type dopant. 4. A light emitting diode comprising: a first conductivity type GaAs substrate; a Bragg reflection layer comprising at least two kinds of materials having different Al compositions, each of which is selected from a first conductivity type (Alx4Ga1−x4)y4In1−y4P (0≦x4≦1, 0.4≦y4≦0.6); a lower cladding layer comprising a first conductivity type (Alx1Ga1−x1)y1In1−y1P (0≦x1≦1, 0.4≦y1≦0.6); a light emitting layer comprising an intrinsic semiconductor layer having a multiquantum well structure comprising an (Alx2Ga1−x2)y2In1−y2P (0≦x2≦1, 0.4≦y2≦0.6); an upper cladding layer comprising a second conductivity type (Alx3Ga1−x3)y3In1−y3P (0≦x3≦1, 0.4≦y3≦0.6); and a current spreading layer comprising a second conductivity type GaP layer; wherein a first hydrogen concentration is not more than 2×1017 cm−3, a first carbon concentration is not more than 2×1016 cm−3, and a first oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer, and a second hydrogen concentration is not more than 5×1017 cm−3, a second carbon concentration is not more than 5×1017 cm−3, and a second oxygen concentration is not more than 2×1016 cm−3 in a partial region or in a total region of the current-spreading layer. 5. A light emitting diode comprising: a first conductivity type GaAs substrate; a Bragg reflection layer comprising materials selected from a first conductivity type Alx5Ga1−x5As (0≦x5≦1) and a first conductivity type (Alx6Ga1−x6)y6In1−y6P (0≦x6≦1, 0.4≦y6≦0.6); a lower cladding layer comprising a first conductivity type (Alx1Ga1−x1)y1In1−y1P (0≦x1≦1, 0.4≦y1≦0.6); a light emitting layer comprising an intrinsic semiconductor layer having a multiquantum well structure comprising an (Alx2Ga1−x2)y2In1−y2P (0≦x2≦1, 0.4≦y2≦0.6); an upper cladding layer comprising a second conductivity type (Alx3Ga1−x3)y3In1−y3P (0≦x3≦1, 0.4≦y3≦0.6); and a current spreading layer comprising a second conductivity type GaP layer; wherein a first hydrogen concentration is not more than 2×1017 cm−3, a first carbon concentration is not more than 2×1016 cm−3, and a first oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer, and a second hydrogen concentration is not more than 5×1017 cm−3, a second carbon concentration is not more than 5×1017 cm−3, and a second oxygen concentration is not more than 2×1016 cm−3 in a partial region or in a total region of the current-spreading layer. 6. A light emitting diode comprising: an n-type GaAs substrate; a Bragg reflection layer comprising at least two kinds of materials having different Al compositions, each of which is selected from an n-type Alx0Ga1−x0As (0≦x0≦1); a lower cladding layer comprising an n-type (Alx1Ga1−x1)y1In1−y1P (0≦x1≦1, 0.4≦y1≦0.6); a light emitting layer comprising an intrinsic semiconductor layer having a multiquantum well structure comprising an (Alx2Ga1−x2)y2In1−y2P (0≦x2≦1, 0.4y2≦0.6); an upper cladding layer comprising a Mg-doped p-type (Alx3Ga1−x3)y3In1−y3P (0≦x3≦1, 0.4≦y3≦0.6); and a current spreading layer comprising a Mg-doped p-type GaP layer; wherein a first hydrogen concentration is not more than 2×1017 cm−3, a first carbon concentration is not more than 2×1016 cm−3, and a first oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer, and a second hydrogen concentration is not more than 5×1017 cm−3, a second carbon concentration is not more than 5×1017 cm−3, and a second oxygen concentration is not more than 2×1016 cm−3 in a partial region or in a total region of the current-spreading layer. 7. The light emitting diode according to claim 6, further comprising: an intermediate layer provided between the upper cladding layer and the current-spreading layer, the intermediate layer comprising (Alx7Ga1−x7)y7In1−y7P (0≦x7≦1, 0≦y7≦1) doped with Mg to have a Mg concentration higher than that in the upper cladding layer; wherein a third hydrogen concentration is not more than 1×1018 cm−3, a third carbon concentration is not more than 1×1018 cm−3, and a third oxygen concentration is not more than 5×1017 cm−3 in the intermediate layer. 8. The light emitting diode according to claim 7, wherein: the intermediate layer includes at least one element selected from a group consisting of Si, Se, and Te as an n-type dopant, and a total of n-type dopant concentration is not less than 5×1017 cm−3 as well as lower than the Mg concentration. 9. A light emitting diode comprising: an n-type GaAs substrate; a Bragg reflection layer comprising at least two kinds of materials having different Al compositions, each of which is selected from an n-type (Alx4Ga1−x4)y4In1−y4P (0≦x4≦1, 0.4≦y4≦0.6); a lower cladding layer comprising an n-type (Alx1Ga1−x1)y1In1−y1P (0≦x1≦1, 0.4≦y1≦0.6); a light emitting layer comprising an intrinsic semiconductor layer having a multiquantum well structure comprising an (Alx2Ga1−x2)y2In1−y2P (0≦x2≦1, 0.4≦y2≦0.6); an upper cladding layer comprising a Mg-doped p-type (Alx3Ga1−x3)y3In1−y3P (0≦x3≦1, 0.4≦y3≦0.6); and a current spreading layer comprising a Mg-doped p-type GaP layer; wherein a first hydrogen concentration is not more than 2×1017 cm−3, a first carbon concentration is not more than 2×1016 cm−3, and a first oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer, and a second hydrogen concentration is not more than 5×1017 cm−3, a second carbon concentration is not more than 5×1017 cm−3, and a second oxygen concentration is not more than 2×1016 cm−3 in a partial region or in a total region of the current-spreading layer. 10. A light emitting diode comprising: an n-type GaAs substrate; a Bragg reflection layer comprising materials selected from an n-type Alx5Ga1−x5As (0≦x5≦1) and an n-type (Alx6Ga1−x6)y6In1−y6P (0≦x6≦1, 0.4≦y6≦0.6); a lower cladding layer comprising an n-type (Alx1Ga1−x1)y1In1−y1P (0≦x1≦1, 0.4≦y1≦0.6); a light emitting layer comprising an intrinsic semiconductor layer having a multiquantum well structure comprising an (Alx2Ga1−x2)y2In1−y2P (0≦x2≦1, 0.4y2≦0.6); an upper cladding layer comprising a Mg-doped p-type (Alx3Ga1−x3)y3In1−y3P (0≦x3≦1, 0.4≦y3≦0.6); and a current spreading layer comprising a Mg-doped p-type GaP layer; wherein a first hydrogen concentration is not more than 2×1017 cm−3, a first carbon concentration is not more than 2×1016 cm−3, and a first oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer, and a second hydrogen concentration is not more than 5×1017 cm−3, a second carbon concentration is not more than 5×1017cm−3, and a second oxygen concentration is not more than 2×1016 cm−3 in a partial region or in a total region of the current-spreading layer. 11. A light emitting diode comprising: a conductive substrate; a multilayered crystal layer comprising a plurality of compound semiconductor crystal layers joined with the conductive substrate via a metal layer, the multilayered crystal layer comprising: a lower cladding layer comprising a first conductivity type (Alx1Ga1−x1)y1In1−y1P (0≦x1≦1, 0.4≦y1≦0.6); a light emitting layer comprising an intrinsic semiconductor layer having a multiquantum well structure comprising an (Alx2Ga1−x2)y2In1−y2P (0≦x2≦1, 0.4≦y2≦0.6); and an upper cladding layer comprising a second conductivity type (Alx3Ga1−x3)y3In1−y3P (0≦x3≦1, 0.4≦y3≦0.6), sequentially deposited from a side in vicinity of the conductive substrate; and wherein a hydrogen concentration is not more than 2×1017 cm−3, a carbon concentration is not more than 2×1016 cm−3, and an oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer. 12. The light emitting diode according to claim 11, further comprising: a first conductivity type GaP layer provided between the conductive substrate and the lower cladding layer, wherein a hydrogen concentration is not more than 5×1017 cm−3, a carbon concentration is not more than 5×1017 cm−3, and an oxygen concentration is not more than 2×1016 cm−3 in at least a partial region of the GaP layer. 13. The light emitting diode according to claim 12 further comprising: an intermediate layer provided between the GaP layer and the lower cladding layer, the intermediate layer comprising (Alx7Ga1−x7)y7In1−y7P (0≦x7≦1, 0≦y7≦1) doped with a first conductivity type dopant having a concentration higher than that of a first conductivity type dopant in the lower cladding layer; wherein a hydrogen concentration is not more than 1×1018 cm−3, a carbon concentration is not more than 1×1018 cm−3, and an oxygen concentration is not more than 5×1016 cm−3 in the GaP layer. 14. The light emitting diode according to claim 13, wherein: the concentration of the first conductivity type dopant of the intermediate layer is not less than 5×1017 cm−3, and the intermediate layer further includes a second conductivity type dopant having a concentration lower than that of the first conductivity type dopant. 15. The light emitting diode according to claim 14, wherein: the conductive substrate comprises a material selected from a group consisting of Si, GaAs and Cu. 16. A light emitting diode comprising: a conductive substrate; a light emitting part comprising: a first conductivity type AlGaInP based lower cladding layer; a light emitting layer comprising an intrinsic semiconductor layer having an AlGaInP based multiquantum well structure; and a second conductivity type AlGaInP based upper cladding layer; wherein a hydrogen concentration is not more than 2×1017 cm−3, a carbon concentration is not more than 2×1016 cm−3, and an oxygen concentration is not more than 2×1016 cm−3 in each of the lower cladding layer, the light emitting layer, and the upper cladding layer.