IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0186948
(2008-08-06)
|
등록번호 |
US-7655537
(2010-03-31)
|
우선권정보 |
FR-00 15280(2000-11-27) |
발명자
/ 주소 |
- Ghyselen, Bruno
- Letertre, Fabrice
|
출원인 / 주소 |
- S.O.I.Tec Silicon on Insulator Technologies
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
8 인용 특허 :
16 |
초록
▼
A method of fabricating composite substrates by associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing a sample carrier having a surface and a recess that has a depth that is appr
A method of fabricating composite substrates by associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing a sample carrier having a surface and a recess that has a depth that is approximate the same as the predetermined thickness of the intermediate substrate so that the transfer layer free surface is positioned flush with the sample carrier surface; providing a support layer both on the transfer layer free surface and on a portion of the sample carrier surface surrounding the recess; removing the portion of the support layer that extends beyond the intermediate substrate; and detaching the transfer layer and support layer from its intermediate support to form the composite substrate. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications.
대표청구항
▼
What is claimed is: 1. A method of fabricating composite substrates of semiconductor materials for use in optics, electronics, or optoelectronics which comprises: associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer
What is claimed is: 1. A method of fabricating composite substrates of semiconductor materials for use in optics, electronics, or optoelectronics which comprises: associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing a sample carrier having a surface and a recess that has a depth that is approximate the same as the predetermined thickness of the intermediate substrate so that the transfer layer free surface is positioned flush with the sample carrier surface; providing a plurality of intermediate substrates and sample carrier recesses; providing each intermediate substrate in a carrier recess so that each transfer layer free surface is positioned flush with the sample carrier surface; providing a support layer both on each transfer layer free surface and on a portion of the sample carrier surface surrounding each recess; removing the portions of the support layer that extend beyond each intermediate substrate; and detaching each transfer layer and support layer from its intermediate support to form the composite substrates. 2. The method of claim 1, wherein each transfer layer is made of the same or a different material and each composite substrate is separately detached from its intermediate support. 3. The method of claim 1, wherein the support layer is provided by deposition using at least one of chemical vapor deposition, liquid deposition, or molecular beam deposition. 4. The method of claim 3, wherein the support layer is deposited by vapor phase epitaxy, hydride vapor phase epitaxy, or by high temperature chemical vapor deposition. 5. The method of claim 1, wherein the support layer is made of at least one of monocrystalline materials, polycrystalline materials, amorphous materials, materials comprising a plurality of phases, and materials that are less expensive than that of the transfer layer. 6. The method of claim 5, wherein the support layer is silicon carbide. 7. A method of fabricating composite substrates of semiconductor materials for use in optics, electronics, or optoelectronics which comprises: associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing the transfer layer, the intermediate support, or both with a bonding layer prior to associating the transfer layers with the intermediate support; providing a sample carrier having a surface and a recess that has a depth that is approximate the same as the predetermined thickness of the intermediate substrate so that the transfer layer free surface is positioned flush with the sample carrier surface; providing a support layer both on the transfer layer free surface and on a portion of the sample carrier surface surrounding the recess; removing the portion of the support layer that extends beyond the intermediate substrate; and detaching the transfer layer and support layer from its intermediate support to form the composite substrate. 8. The method of claim 7, wherein the intermediate support is provided with a bonding layer prior to providing the transfer layer thereon. 9. The method of claim 8 wherein the bonding layer of the intermediate support is planarized prior to providing the transfer layer thereon. 10. The method of claim 8, wherein the transfer layer is provided with a bonding layer prior to being provided upon the intermediate support. 11. The method of claim 8, wherein the bonding layer is made of at least one of amorphous materials, polycrystalline materials, or metallic materials. 12. The method of claim 8, wherein the intermediate support is silicon carbide and is provided with a bonding layer of a silicon oxide or silicon nitride. 13. The method of claim 7, which further comprises removing the bonding layer from the composite substrate after it is detached from the intermediate support. 14. The method of claim 7, which further comprises removing the bonding layer from the intermediate support after the composite substrate is detached therefrom so that the intermediate support can be recycled for fabricating additional composite substrates. 15. The method of claim 7, wherein the support layer is provided by deposition using at least one of chemical vapor deposition, liquid deposition, or molecular beam deposition. 16. The method of claim 15, wherein the support layer is deposited by vapor phase epitaxy, hydride vapor phase epitaxy, or by high temperature chemical vapor deposition. 17. The method of claim 7, wherein the support layer is made of at least one of monocrystalline materials, polycrystalline materials, amorphous materials, materials comprising a plurality of phases, and materials that are less expensive than that of the transfer layer. 18. The method of claim 17, wherein the support layer is silicon carbide. 19. A method of fabricating composite substrates of semiconductor materials for use in optics, electronics, or optoelectronics which comprises: associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing a sample carrier having a surface and a recess that has a depth that is approximate the same as the predetermined thickness of the intermediate substrate so that the transfer layer free surface is positioned flush with the sample carrier surface; providing a support layer both on the transfer layer free surface and on a portion of the sample carrier surface surrounding the recess; removing the portion of the support layer that extends beyond the intermediate substrate; and detaching the transfer layer and support layer from its intermediate support to form the composite substrate; wherein in each composite substrate the transfer layer is made of at least one of silicon (1,1,1,), silicon carbide, a monocrystalline material, sapphire, diamond, gallium nitride, aluminum nitride, or a combination of at least two of these materials, the support layer is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, and a combination of at least two of these materials, and the transfer layer is a relatively thin layer compared to the support layer which is a relatively thick layer. 20. The method of claim 19, which further comprises providing the transfer layer, the intermediate support, or both with a bonding layer prior to associating the transfer layers with the intermediate support; and providing the support layer by deposition using at least one of chemical vapor deposition, liquid deposition, or molecular beam deposition, wherein the support layer is made of at least one of monocrystalline materials, polycrystalline materials, amorphous materials, materials comprising a plurality of phases, and materials that are less expensive than that of the transfer layer.
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