초록 ▼

Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors

Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations.

대표청구항 ▼

I claim: 1. An apparatus for selectively forming a semiconductor film on a substrate, the apparatus comprising: a chemical vapor deposition (CVD) reactor comprising a reaction space; a substrate support within the reaction space, wherein the substrate support is sized and shaped to receive a substr

I claim: 1. An apparatus for selectively forming a semiconductor film on a substrate, the apparatus comprising: a chemical vapor deposition (CVD) reactor comprising a reaction space; a substrate support within the reaction space, wherein the substrate support is sized and shaped to receive a substrate; a first inlet set of one or more inlets in fluid communication with the reaction space; a second inlet set of one or more inlets in fluid communication with the reaction space; a first gas source configured to supply a precursor for semiconductor deposition to the first inlet set; and a second gas source configured to supply an etchant to the second inlet set, wherein the inlet sets and sources define separate flow paths for the precursor and the etchant to a mixing space within the reaction space, and wherein the flow paths and reaction space are positioned such that the etchant and precursor are uniformly mixable and have a common flow path from the mixing space to the substrate on the substrate support for selectively forming a semiconductor film on the substrate. 2. The apparatus of claim 1, wherein there are no restrictions to fluid flow between the mixing space and the substrate support. 3. The apparatus of claim 1, wherein the mixing space has a width sufficient to pass the substrate therethrough. 4. The apparatus of claim 1, wherein the CVD reactor comprises a single wafer, horizontal flow chamber. 5. The apparatus of claim 4, wherein the first and second inlet sets are formed in an inlet flange adjacent the chamber, wherein the reaction space includes the mixing space defined by the inlet flange and an inner space defined by the chamber. 6. The apparatus of claim 1, wherein the first and second inlet sets are disposed on different walls of the mixing space. 7. The apparatus of claim 6, wherein the first and second inlet sets are disposed on opposing walls of the mixing space. 8. The apparatus of claim 6, wherein the first and second inlet sets are disposed at an inlet end of the chamber, the substrate support being positioned between the inlet end and an exhaust end of the chamber. 9. The apparatus of claim 8, wherein the first and second inlet sets are disposed above and below the mixing space, respectively. 10. The apparatus of claim 1, wherein the precursor includes trisilane (Si3H8). 11. The apparatus of claim 1, wherein the etchant includes diatomic chlorine (Cl2). 12. The apparatus of claim 1, wherein a carrier gas is supplied to the second inlet set, the carrier gas comprising at least one non-hydrogen containing inert gas. 13. The apparatus of claim 1, wherein the CVD reactor comprises radiant heaters configured to heat a substrate positioned on the substrate support. 14. The apparatus of claim 1, wherein the mixing space is defined within a substrate insertion opening adjacent to a gate valve that is located at an end of the reaction space. 15. The apparatus of claim 1, further comprising a controller programmed to alternately and sequentially supply the precursor and the etchant to the first and second inlet sets, respectively. 16. The apparatus of claim 1, further comprising a controller programmed to simultaneously supply the precursor and the etchant to the first and second inlet sets, respectively. 17. An apparatus comprising: a chemical vapor deposition (CVD) reactor comprising a reaction space; a substrate support within the reaction space; a first inlet set of one or more inlets in fluid communication with the reaction space, wherein the first inlet set comprises a manifold configured to spread a precursor for semiconductor deposition across a width of the reaction space via a plurality of inlets; a second inlet set of one or more inlets in fluid communication with the reaction space; a first gas source configured to supply the precursor to the first inlet set; and a second gas source configured to supply an etchant to the second inlet set, wherein the inlet sets and sources define separate flow paths for the precursor and the etchant to a mixing space within the reaction space, and wherein the flow paths and reaction space are positioned such that the etchant and precursor are uniformly mixable and have a common flow path from the mixing space to a substrate on the substrate support for selectively forming a semiconductor film on the substrate. 18. The apparatus of claim 17, wherein the second inlet set comprises a manifold configured to spread the etchant across a width of the reaction space via a plurality of slits.