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In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In v

In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.

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What is claimed is: 1. A method for manufacturing an organic semiconductor element, comprising the steps of: forming a gate electrode; forming a source electrode and a drain electrode over the gate electrode; forming an organic semiconductor film over the source electrode and the drain electrode; a

What is claimed is: 1. A method for manufacturing an organic semiconductor element, comprising the steps of: forming a gate electrode; forming a source electrode and a drain electrode over the gate electrode; forming an organic semiconductor film over the source electrode and the drain electrode; and heating the organic semiconductor film under atmospheric pressure or under reduced pressure in an inert gas atmosphere after the formation of the organic semiconductor film has been completed. 2. The method for manufacturing an organic semiconductor element according to claim 1, wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film. 3. The method for manufacturing an organic semiconductor element according to claim 1 further comprising: forming a self assembled monolayer (SAM) on a surface where the organic semiconductor film is to be formed before forming the organic semiconductor film. 4. The method for manufacturing an organic semiconductor element according to claim 1, wherein the organic semiconductor film is heated at a temperature in which average value of a grain size of the organic semiconductor film does not grow 10% or more. 5. The method for manufacturing an organic semiconductor element according to claim 1, wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method. 6. The method for manufacturing an organic semiconductor element according to claim 1, wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed. 7. The method for manufacturing an organic semiconductor element according to claim 1, wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method. 8. The method for manufacturing an organic semiconductor element according to claim 1, wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten. 9. The method for manufacturing an organic semiconductor element according to claim 1, wherein the organic semiconductor element is applied to an electronic apparatus selected from the group consisting of a cellular phone, a TV receiver, and an ID card. 10. The method for manufacturing an organic semiconductor element according to claim 1 further comprising: performing a plasma treatment to a surface where the organic semiconductor film is to be formed before forming the organic semiconductor film. 11. A method for manufacturing an organic semiconductor element, comprising the steps of: forming a gate electrode; forming a source electrode and a drain electrode over the gate electrode; forming an organic semiconductor film over the source electrode and the drain electrode; and heating the organic semiconductor film under atmospheric pressure or under reduced pressure after the formation of the organic semiconductor film has been completed. 12. The method for manufacturing an organic semiconductor element according to claim 11, wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film. 13. The method for manufacturing an organic semiconductor element according to claim 11, wherein the organic semiconductor film is heated at a temperature in which average value of a grain size of the organic semiconductor film does not grow 10% or more. 14. The method for manufacturing an organic semiconductor element according to claim 11, wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method. 15. The method for manufacturing an organic semiconductor element according to claim 11, wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed. 16. The method for manufacturing an organic semiconductor element according to claim 11, wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method. 17. The method for manufacturing an organic semiconductor element according to claim 11, wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten. 18. The method for manufacturing an organic semiconductor element according to claim 11, wherein the organic semiconductor element is applied to an electronic apparatus selected from the group consisting of a cellular phone, a TV receiver, and an ID card. 19. A method for manufacturing an organic semiconductor element, comprising the steps of: forming a gate electrode; forming a gate insulating film over the gate electrode; forming a source electrode and a drain electrode over the gate insulating film; forming an organic semiconductor film over the source electrode, the drain electrode, and the gate insulating film; and heating the organic semiconductor film under atmospheric pressure or under reduced pressure after the formation of the organic semiconductor film has been completed, wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film. 20. The method for manufacturing an organic semiconductor element according to claim 19, wherein the organic semiconductor film is heated in an inert gas atmosphere. 21. The method for manufacturing an organic semiconductor element according to claim 19, wherein the organic semiconductor film is heated at a temperature in which average value of a grain size of the organic semiconductor film does not grow 10% or more. 22. The method for manufacturing an organic semiconductor element according to claim 19, wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method. 23. The method for manufacturing an organic semiconductor element according to claim 19, wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed. 24. The method for manufacturing an organic semiconductor element according to claim 19, wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method. 25. The method for manufacturing an organic semiconductor element according to claim 19, wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten. 26. The method for manufacturing an organic semiconductor element according to claim 19 further comprising: forming a self-assembled monolayer (SAM) on a surface where the organic semiconductor film is to be formed before forming the organic semiconductor film. 27. A method for manufacturing an organic semiconductor element, comprising the steps of: forming a gate electrode; forming a gate insulating film over the gate electrode; forming a source electrode and a drain electrode over the gate insulating film; forming an organic semiconductor film over the source electrode and the drain electrode; and heating the organic semiconductor film under atmospheric pressure or under reduced pressure after the formation of the organic semiconductor film has been completed. 28. The method for manufacturing an organic semiconductor element according to claim 27, wherein the organic semiconductor film is heated in an inert gas atmosphere. 29. The method for manufacturing an organic semiconductor element according to claim 27, wherein the organic semiconductor film is heated at a temperature which is less than the melting point of the organic semiconductor film. 30. The method for manufacturing an organic semiconductor element according to claim 27, wherein the organic semiconductor film is heated at a temperature in which average value of a grain size of the organic semiconductor film does not grow 10% or more. 31. The method for manufacturing an organic semiconductor element according to claim 27, wherein the organic semiconductor film is formed by depositing pentacene by using a vacuum vapor deposition method. 32. The method for manufacturing an organic semiconductor element according to claim 27, wherein the organic semiconductor film is heated in a processing chamber in which the organic semiconductor film is formed. 33. The method for manufacturing an organic semiconductor element according to claim 27, wherein the gate electrode or the source electrode and the drain electrode is formed by using a sputtering method, an ink-jetting method, a spin coating method, or a vapor deposition method. 34. The method for manufacturing an organic semiconductor element according to claim 27, wherein the gate electrode or the source electrode and the drain electrode is formed by using a conductive film having tungsten. 35. The method for manufacturing an organic semiconductor element according to claim 27 further comprising: forming a self assembled monolayer (SAM) on a surface where the organic semiconductor film is to be formed before forming the organic semiconductor film.