초록

A method of preparing an ultra-pure organometallic compound comprising using a microchannel device for synthesis in reacting a metal halide with an alkylating agent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.

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What is claimed is: 1. A process for preparing organometallic compounds of ultra-high purity comprising: reacting a metal salt and an alkylating agent in a microchannel device to yield an organometallic compound wherein the resulting compound has the minimum purity required for chemical vapor depos

What is claimed is: 1. A process for preparing organometallic compounds of ultra-high purity comprising: reacting a metal salt and an alkylating agent in a microchannel device to yield an organometallic compound wherein the resulting compound has the minimum purity required for chemical vapor deposition processes. 2. The process of claim 1 wherein the purity of the compound ranges from is at least 99.99% pure. 3. The process of claim 1 wherein the metal salt is a metal halide. 4. The process of claim 1 further wherein the reaction is performed in the presence of a solvent. 5. The process of claim 1 further comprising purifying the alkylating agent. 6. The process of claim 5 wherein the alkylating agent is further purified using a microchannel device. 7. The process of claim 1 wherein the alkylating agent comprises a trialkylaluminum compound, an alkyl magnesium halide compound, or an alkyllithium compound and wherein the molar ratio of alkylating agent to metal halide is greater than or equal to one. 8. The process of claim 7 wherein the alkylating agent is a trialkylaluminum compound and the trialkylaluminum is in the presence a tertiary amine, a tertiary phosphine, or a mixture of a tertiary amine and a tertiary phosphine in a microchannel device. 9. A method of preparing an organometallic compound of ultra-high purity comprising purifying an organometallic compound comprising impurities in a microchannel device to reduce the level of impurities with relative volatility (□) between 0.8<□<1.5 to a level useful in electronic materials applications. 10. The method of claim 9 comprising purifying an organometallic compound comprising impurities in a microchannel device to reduce the level of impurities with relative volatility (□) between 0 8<□<1.5 to less than 1 ppm. 11. The method of claim 9 comprising purifying an organometallic compound comprising impurities in a microchannel device using temperature swing adsorption to reduce the level of impurities via adduct formation. 12. The method of claim 9 wherein the microchannel device further comprises a height equivalent theoretical plate (HETP) of less than 5 cm. 13. The process of claim 4 wherein the solvent is an ionic liquid. 14. The process of claim 13 wherein the ionic liquid solvent comprises a cation chosen from a hydrocarbylammonium cation, a hydrocarbylphosphonium cation, a hydrocarbyllpyridinium cation, and a dihydrocarblylimidazolium cation. 15. The method of claim 13 wherein the ionic liquid solvent comprises an anion chosen from a chlorometalate anion, a fluoroborate anion, and a fluorophosphate anion.