IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0261996
(2005-10-27)
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등록번호 |
US-7659981
(2010-04-02)
|
발명자
/ 주소 |
- Lo, William
- Wilsher, Kenneth
- Nataraj, Nagamani
- Boiadjieva, Nina
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
22 인용 특허 :
67 |
초록
▼
A system for probing a DUT is disclosed, the system having a pulsed laser source, a CW laser source, beam optics designed to point a reference beam and a probing beam at the same location on the DUT, optical detectors for detecting the reflected reference and probing beams, and a collection electron
A system for probing a DUT is disclosed, the system having a pulsed laser source, a CW laser source, beam optics designed to point a reference beam and a probing beam at the same location on the DUT, optical detectors for detecting the reflected reference and probing beams, and a collection electronics. The beam optics is a common-path polarization differential probing (PDP) optics. The common-path PDP optics divides the incident laser beam into two beams of orthogonal polarization—one beam simulating a reference beam while the other simulating a probing beam. Both reference and probing beams are pointed to the same location on the DUT. Due to the intrinsic asymmetry of a CMOS transistor, the interaction of the reference and probing beams with the DUT result in different phase modulation in each beam. This difference can be investigated to study the response of the DUT to the stimulus signal.
대표청구항
▼
What is claimed is: 1. A system for investigating the operation of a transistor in an integrated circuit microchip using laser probing, comprising: a laser source providing a laser beam; a beam optics comprising a polarizer polarizing said beam in a vertical direction so as to provide a vertically
What is claimed is: 1. A system for investigating the operation of a transistor in an integrated circuit microchip using laser probing, comprising: a laser source providing a laser beam; a beam optics comprising a polarizer polarizing said beam in a vertical direction so as to provide a vertically polarized beam, and a rotator rotating said vertically polarized beam through a predetermined angle so as to provide a polarized-rotated beam consisting of a vertically polarized component and a horizontally polarized component; an optical retarder positioned to receive the polarized-rotated beam and retard one of said vertically and horizontally polarized components with respect to the other; a beam pointing optics receiving said polarized-rotated beam from the optical retarder and transmitting said vertically and horizontally polarized components along the same optical path while pointing the vertically and horizontally polarized components onto the transistor in alignment with the gate length and gate width of the transistor and; a first photodetector receiving at least a portion of reflected laser light that is reflected from said microchip and providing an electrical signal; collection electronics receiving the electrical signal from said photodetector and providing an output signal; an analysis system receiving and analyzing said output signal. 2. The system of claim 1, wherein said angle is about 45 degrees from said vertical direction. 3. The system of claim 2, wherein said laser source is a mode-locked laser (MLL). 4. The system of claim 2, wherein said laser source is a pulsed laser. 5. The system of claim 3, further comprising a continuous wave (CW) laser source. 6. The system of claim 5, wherein laser output of said CW laser is pulsed. 7. The system of claim 6, wherein said CW laser comprises a wavelength-tunable, external cavity, laser source. 8. The system of claim 7, wherein said CW laser source is wavelength matched to said MLL. 9. The system of claim 7, wherein said CW laser source comprises a laser diode, a Bragg deflector, a Faraday isolator, and a drive circuit. 10. The system of claim 9, wherein said drive circuit drives said laser diode with a continuous or pulsed drive signal, selectively. 11. The system of claim 1, further comprising a second photodetector receiving a second portion of said reflected laser light that is reflected from said microchip, and providing a second electrical signal. 12. The system of claim 11, wherein said output signal comprises a differential of said electrical signal and said second electrical signal. 13. The system of claim 11, wherein said output signal comprises a ratio of said electrical signal and said second electrical signal. 14. The system of claim 11, wherein said output collection electronics comprises analog to digital converter. 15. An optical system for investigating the operation of a transistor in an integrated circuit, comprising: a laser source providing a laser beam; a polarizer receiving said laser beam and providing a polarized laser beam aligned in a first direction; a faraday rotator receiving said polarized laser beam and rotating the polarized laser beam to provide a rotated-polarized beam aligned in a second direction; an optical retarder partially retarding said rotated-polarized beam, the optical retarder having its axes aligned with gate width and gate length of the transistor; an objective lens directing said rotated-polarized beam onto a specimen; an optical deflector for deflecting at least part of a reflection of said rotated-polarized beam from said specimen. 16. The system of claim 15, wherein said deflector comprises a first beam splitter. 17. The system of claim 16, further comprising a second beam splitter deflecting a remainder of said reflection. 18. The system of claim 17, further comprising a first and a second photodetectors receiving deflected reflection from said first and second beam splitters, respectively. 19. The system of claim 15, wherein said laser source comprise a mode-locked laser (MLL) and a continuous-wave (CW) laser sources. 20. The system of claim 19, wherein the output of said CW laser source is pulsed. 21. The system of claim 20, wherein said CW laser source comprises wavelength-tunable, external cavity laser source. 22. The system of claim 21, further comprising a drive electronics circuit selectively applying to said CW laser source a pulsed or continuous drive signal. 23. The system of claim 21, wherein said CW laser source comprises a laser diode, a Bragg deflector, a Faraday isolator, and a drive circuit. 24. The system of claim 15, wherein said first direction is aligned with either the gate width or the gate length of said transistors. 25. A method for investigating the operation of a transistor in an integrated circuit microchip using laser probing, comprising: generating a pulsed laser beam; polarizing said pulsed laser beam in a first direction aligned with one of gate width or gate length of the transistor, so as to provide a polarized-pulsed laser beam; rotating said polarized-laser beam so as to provide a rotated laser beam aligned in a second direction; partially retarding said rotated laser beam; focusing said rotated laser beam onto the transistor in said microchip; and sensing beam reflection from said microchip. 26. The method of claim 25, wherein generating a pulsed laser beam comprises driving a mode-locked laser (MLL) and simultaneously driving a continuous-wave laser (CWL), and superimposing the output of said MLL and CWL. 27. The method of claim 26, further comprising pulsing the output of said CWL. 28. The method of claim 27, wherein said pulsing comprises driving said CWL with a pulsed driving signal. 29. The method of claim 26, further comprising wavelength matching the wavelength of said CWL to that of said MLL. 30. The method of claim 25, wherein said retarding comprises phase-shifting part of said beam by π/2.
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