초록 ▼

A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in th

A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a display device comprising: forming a first semiconductor layer and a second semiconductor layer over a substrate; forming a first insulating film over the first semiconductor layer and the second semiconductor layer; forming a first conductive lay

What is claimed is: 1. A method for manufacturing a display device comprising: forming a first semiconductor layer and a second semiconductor layer over a substrate; forming a first insulating film over the first semiconductor layer and the second semiconductor layer; forming a first conductive layer and a second conductive layer over the first semiconductor layer and the second semiconductor layer, respectively, wherein a width of the second conductive layer is larger than a width of the first conductive layer; forming a second insulating film over the first conductive layer and the second conductive layer; forming a third conductive layer which is in electrical contact with the first semiconductor layer over the second insulating film, and forming a fourth conductive layer which is not in contact with the second semiconductor layer over the second insulating film; and forming a sealing member over the fourth conductive layer. 2. A method for manufacturing a display device according to claim 1, wherein the first insulating film is a gate insulating film. 3. A method for manufacturing a display device according to claim 1, wherein the first conductive layer is a gate electrode. 4. A method for manufacturing a display device according to claim 1, wherein the third conductive layer is one of a source electrode and a drain electrode. 5. A method for manufacturing a display device according to claim 1, wherein a spacer is included in the sealing member. 6. A method for manufacturing a display device according to claim 1, wherein the display device is a liquid crystal display device. 7. A method for manufacturing a display device according to claim 1, wherein the display device is incorporated in one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 8. A method of manufacturing a display device according to claim 1, wherein the first semiconductor layer and the second semiconductor layer are formed in a same process, wherein the first conductive layer and the second conductive layer are formed in a same process, and wherein the third conductive layer and the fourth conductive layer are formed in a same process. 9. A method for manufacturing a display device comprising: forming a first semiconductor layer and a second semiconductor layer over a substrate; forming a first insulating film over the first semiconductor layer and the second semiconductor layer; forming a first conductive layer and a second conductive layer over the first semiconductor layer and the second semiconductor layer, respectively, wherein a width of the second conductive layer is larger than a width of the first conductive layer; forming a second insulating film over the first conductive layer and the second conductive layer; forming a third conductive layer which is in electrical contact with the first semiconductor layer over the second insulating film, and forming a fourth conductive layer which is not in contact with the second semiconductor layer over the second insulating film; forming a pixel electrode which is electrically connected to the third conductive layer; and forming a sealing member over the fourth conductive layer. 10. A method for manufacturing a display device according to claim 9, wherein the first insulating film is a gate insulating film. 11. A method for manufacturing a display device according to claim 9, wherein the first conductive layer is a gate electrode. 12. A method for manufacturing a display device according to claim 9, wherein the third conductive layer is one of a source electrode and a drain electrode. 13. A method for manufacturing a display device according to claim 9, wherein a spacer is included in the sealing member. 14. A method for manufacturing a display device according to claim 9, wherein the display device is a liquid crystal display device. 15. A method for manufacturing a display device according to claim 9, wherein the display device is incorporated in one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 16. A method of manufacturing a display device according to claim 9, wherein the first semiconductor layer and the second semiconductor layer are formed in a same process, wherein the first conductive layer and the second conductive layer are formed in a same process, and wherein the third conductive layer and the fourth conductive layer are formed in a same process. 17. A method for manufacturing a display device comprising: forming a first semiconductor layer and a second semiconductor layer over a substrate; forming a first insulating film over the first semiconductor layer and the second semiconductor layer; forming a first conductive layer and a second conductive layer over the first semiconductor layer and the second semiconductor layer, respectively, wherein a width of the second conductive layer is larger than a width of the first conductive layer; forming a second insulating film over the first conductive layer and the second conductive layer; forming a third conductive layer which is in electrical contact with the first semiconductor layer over the second insulating film, and forming a fourth conductive layer which is not in contact with the second semiconductor layer over the second insulating film; forming a sealing member over the fourth conductive layer; and attaching an opposed substrate over the sealing member. 18. A method for manufacturing a display device according to claim 17, wherein the first insulating film is a gate insulating film. 19. A method for manufacturing a display device according to claim 17, wherein the first conductive layer is a gate electrode. 20. A method for manufacturing a display device according to claim 17, wherein the third conductive layer is one of a source electrode and a drain electrode. 21. A method for manufacturing a display device according to claim 17, wherein a spacer is included in the sealing member. 22. A method for manufacturing a display device according to claim 17, wherein the display device is a liquid crystal display device. 23. A method for manufacturing a display device according to claim 17, wherein the display device is incorporated in one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 24. A method for manufacturing a display device according to claim 17, wherein the first semiconductor layer and the second semiconductor layer are formed in a same process, wherein the first conductive layer and the second conductive layer are formed in a same process, and wherein the third conductive layer and the fourth conductive layer are formed in a same process. 25. A method for manufacturing a display device comprising: forming a first semiconductor layer and a second semiconductor layer over a substrate; forming a first insulating film over the first semiconductor layer and the second semiconductor layer; forming a first conductive layer and a second conductive layer over the first semiconductor layer and the second semiconductor layer, respectively, wherein a width of the second conductive layer is larger than a width of the first conductive layer; forming a second insulating film over the first conductive layer and the second conductive layer; forming a third conductive layer which is in electrical contact with the first semiconductor layer over the second insulating film, and forming a fourth conductive layer which is not in contact with the second semiconductor layer over the second insulating film; forming a pixel electrode which is electrically connected to the third conductive layer; forming a sealing member over the fourth conductive layer; and attaching an opposed substrate over the sealing member. 26. A method for manufacturing a display device according to claim 25, wherein the first insulating film is a gate insulating film. 27. A method for manufacturing a display device according to claim 25, wherein the first conductive layer is a gate electrode. 28. A method for manufacturing a display device according to claim 25, wherein the third conductive layer is one of a source electrode and a drain electrode. 29. A method for manufacturing a display device according to claim 25, wherein a spacer is included in the sealing member. 30. A method for manufacturing a display device according to claim 25, wherein the display device is a liquid crystal display device. 31. A method for manufacturing a display device according to claim 25, wherein the display device is incorporated in one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 32. A method for manufacturing a display device according to claim 25, wherein the first semiconductor layer and the second semiconductor layer are formed in a same process, wherein the first conductive layer and the second conductive layer are formed in a same process, and wherein the third conductive layer and the fourth conductive layer are formed in a same process.