IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0369103
(2006-03-06)
|
등록번호 |
US-7671398
(2010-04-21)
|
발명자
/ 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
6 인용 특허 :
52 |
초록
▼
An apparatus includes a plurality of wash durable clothing strands; an array of nano electronic elements fabricated in the strands; and an array of memory elements coupled to the nano electronic elements. The nano electronic elements can include solar cells, display elements, or antennas, among othe
An apparatus includes a plurality of wash durable clothing strands; an array of nano electronic elements fabricated in the strands; and an array of memory elements coupled to the nano electronic elements. The nano electronic elements can include solar cells, display elements, or antennas, among others.
대표청구항
▼
What is claimed is: 1. A nano device, comprising: a. a first array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM; b. a second array of nano memory elements spin coated and vertically stacked with the first array of memory elements; and c. a decoder coupled to
What is claimed is: 1. A nano device, comprising: a. a first array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM; b. a second array of nano memory elements spin coated and vertically stacked with the first array of memory elements; and c. a decoder coupled to the first and second arrays to select one of the memory elements. 2. The device of claim 1, wherein the nano memory elements are applied using a spin-coating technique. 3. The device of claim 1, comprising redundant memory elements to replace defective memory elements. 4. The device of claim 3, wherein the redundant memory elements are tested and each faulty memory element is deselected prior to operation. 5. The device of claim 3, wherein the nano memory elements self-organize to select functional memory elements and deselect defective memory elements. 6. The device of claim 3, wherein the nano memory elements comprise a neural network to detect defective memory elements using genetic algorithm. 7. The device of claim 1, wherein data is stored in one of: a red-ox state, a physical deformation of the nano memory element, a charge stored across the nano memory element. 8. The device of claim 1, wherein the memory element comprises a nano-electro-mechanical system (NEMS). 9. The device of claim 1, wherein the memory element comprises a nanowire positioned above an electrode that, when actuated, performs one of: deforming the nanowire, flattening the nanowire, attaches the wire to the electrode, repels the wire away from the electrode. 10. The device of claim 9, wherein the nano-wires form a two-dimensional (2D) nano-scale crossbar. 11. The device of claim 1, comprising light harvesting nanowires to capture solar energy. 12. The device of claim 1, comprising an energy storage device coupled to the light harvesting nanowires. 13. The device of claim 1, comprising light emitting nanowires. 14. The device of claim 1, comprising an energy storage device coupled to the light emitting nanowires. 15. The device of claim 1, comprising a wash durable strand of clothing containing the memory elements. 16. An apparatus, comprising: a. a plurality of wash durable clothing strands; b. an array of nano electronic elements fabricated in the strands; and c. an array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM coupled to the nano electronic elements. 17. The apparatus of claim 16, wherein the nano electronic elements comprises one of: light emitting nanowires, light harvesting nanowires, an energy storage device, an antenna. 18. The apparatus of claim 16, comprising a processor coupled to the memory elements. 19. The apparatus of claim 16, wherein the nano-electronic elements substantially remain after the strand is washed at least 40 times in accordance with the wash procedure of AATCC Test Method 130-1981. 20. A nano device, comprising: a wash durable material including a substrate having strands with void spaces in the strands and between the strands; and nano-particles filling at least a part of the void spaces and forming one or more projections on the substrate, wherein the nano-particle comprises an array of light emitting elements and an array of light harvesting elements stacked vertically with the array of light emitting elements.
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