|국가/구분||United States(US) Patent 등록|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 2 인용 특허 : 8|
A semiconductor power device includes a circuit to provide a gate signal wherein the gate signal has a negative temperature coefficient of gate driving voltage for decreasing a gate driving voltage with an increase temperature whereby the semiconductor power device has a net Ids temperature coefficient that is less than or equal to zero. In an exemplary embodiment, the gate voltage driver includes a diode that has a negative forward voltage temperature coefficient connected between a gate and a source of the semiconductor power device. In another embodim...
We claim: 1. A semiconductor power device comprising: a circuit for providing a gate driving voltage to a gate of said semiconductor power device wherein said gate driving voltage has a negative temperature coefficient for providing a decreasing gate driving voltage with an increasing temperature whereby the semiconductor power device has a net temperature coefficient less than or equal to zero a circuit branch that includes a first resistor connected in series with a plurality of diodes wherein said circuit branch is connected in parallel with a source...