초록 ▼

A nanoparticle coated with a semiconducting material and a method for making the same. In one embodiment, the method comprises making a semiconductor coated nanoparticle comprising a layer of at least one semiconducting material covering at least a portion of at least one surface of a nanoparticle,

A nanoparticle coated with a semiconducting material and a method for making the same. In one embodiment, the method comprises making a semiconductor coated nanoparticle comprising a layer of at least one semiconducting material covering at least a portion of at least one surface of a nanoparticle, comprising: (A) dispersing the nanoparticle under suitable conditions to provide a dispersed nanoparticle; and (B) depositing at least one semiconducting material under suitable conditions onto at least one surface of the dispersed nanoparticle to produce the semiconductor coated nanoparticle. In other embodiments, the nanoparticle comprises a fullerene. Further embodiments include the semiconducting material comprising CdS or CdSe.

대표청구항 ▼

What is claimed is: 1. A composition, comprising, a fullerene; a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and a film of a se

What is claimed is: 1. A composition, comprising, a fullerene; a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and a film of a semiconducting material disposed on at least the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconducting material disposed on at least said surface portion of the fullerene has a thickness in a range of about 100 nm to about 5000 nm and wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3. 2. The composition of claim 1, wherein the functionalizing group provides at least one reactive site for growth of the semiconducting material. 3. The composition of claim 1, wherein the functionalizing group is suitable for dispersing the fullerene in a liquid. 4. The composition of claim 1, wherein the fullerene has at least one of a cylindrical, spherical, ovoid, oblate and oblong structure. 5. The composition of claim 1, wherein the film of the semiconducting material coats all of the surface of the fullerene. 6. The composition of claim 5, wherein the fullerene has at least one of a cylindrical, spherical, ovoid, oblate and oblong structure. 7. The composition of claim 1, wherein the fullerene comprises at least one of a C60 molecule, C72 molecule, C84 molecule, C96 molecule, C108 molecule, C120 molecule, single-walled carbon nanotube, and multi-walled carbon nanotube. 8. The composition of claim 1, wherein the semiconducting material is capable of at least one of absorbing and emitting light. 9. A composition, comprising: a fullerene; a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and a semiconducting material coating at least the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3 and wherein the semiconducting material coating on at least said surface portion of the fullerene has a thickness in a range of about 100 nm to about 5000 nm. 10. The composition of claim 9, wherein the fullerene has at least one of a cylindrical, spherical, ovoid, oblate and oblong structure. 11. The composition of claim 9, wherein the semiconducting material coats all of the surface of the fullerene. 12. The composition of claim 11, wherein the fullerene has at least one of a cylindrical, spherical, ovoid, oblate and oblong structure. 13. The composition of claim 9, wherein the functionalizing group provides at least one reactive site for growth of the semiconducting material. 14. The composition of claim 9, wherein the functionalizing group is suitable for dispersing the fullerene in a liquid. 15. The composition of claim 9, wherein the fullerene comprises at least one of a C60 molecule, C72 molecule, C84 molecule, C96 molecule, C108 molecule, C120 molecule, single-walled carbon nanotube, and multi-walled carbon nanotube. 16. The composition of claim 9, wherein the semiconducting material is capable of absorbing light. 17. The composition of claim 9, wherein the semiconducting material is capable of emitting light. 18. The composition of claim 1, wherein the film of the semiconducting material is of uniform heterogeneity. 19. A composition, comprising, a fullerene; a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and a semiconducting material disposed on the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3 and wherein the semiconducting material coats all of the surface of the fullerene and has a thickness in a range of about 100 nm to about 5000 nm.