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An object of the invention is to provide a semiconductor device and a display device which can be manufactured with improved material efficiency through a simplified manufacturing process, and a manufacturing method thereof. Another object is to provide a technique capable of forming a pattern such

An object of the invention is to provide a semiconductor device and a display device which can be manufactured with improved material efficiency through a simplified manufacturing process, and a manufacturing method thereof. Another object is to provide a technique capable of forming a pattern such as a wiring included in the semiconductor device or display device in a desired shape with good controllability. One feature of a method for manufacturing a semiconductor device is to comprise the steps of forming a layer having a rough surface, forming a region having low wettability by a composition containing a conductive material and a region having high wettability by the composition over the rough surface, and forming a conductive material using the composition in the region having high wettability. Since regions having largely different wettability (regions having a large difference in wettability) can be formed, a liquid conductive or insulating material is attached only to a formation region with precision. Accordingly, a conductive or insulating layer can be precisely formed in a desired pattern.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising: forming a layer having a rough surface; forming a first region and a second region over the rough surface wherein the second region has higher wettability with respect to a composition containing a conductive mate

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising: forming a layer having a rough surface; forming a first region and a second region over the rough surface wherein the second region has higher wettability with respect to a composition containing a conductive material than the first region; and forming a conductive layer using a droplet of the composition in the second region wherein a ratio between the rough surface including an uneven shape to a rough surface region excluding an increase in surface area due to an uneven shape is 1.5 or more. 2. A method for manufacturing a semiconductor device, comprising: forming a layer having a rough surface; forming a material having a fluorocarbon group over the layer having the rough surface; selectively irradiating the material having a fluorocarbon group with light to form a first region and a second region which has higher wettability with respect to a composition containing a conductive material than the first region; and forming a conductive layer using a droplet of the composition in the second region, wherein a ratio between the rough surface including an uneven shape to a rough surface region excluding an increase in surface area due to an uneven shape is 1.5 or more. 3. The method according to claim 2 further comprising: coating a glass substrate with an Al2O3 sol-gel solution by a spin-coating method; and soaking the substrate with the Al2O3 in water to form the layer having the rough surface. 4. A method for manufacturing a semiconductor device, comprising: forming a layer having a rough surface; selectively forming a mask layer over the layer having a rough surface; forming a material having a fluorocarbon group over the layer having a rough surface and the mask layer; removing the mask layer and the material having a fluorocarbon group over the mask layer to form a first region and a second region which has higher wettability with respect to a composition containing a conductive material than the first region; and forming a conductive layer using a droplet of the composition in the second region, wherein a ratio between the rough surface including an uneven shape to a rough surface region excluding an increase in surface area due to an uneven shape is 1.5 or more. 5. The method according to claim 4 further comprising: coating a glass substrate with an Al2O3 sol-gel solution by a spin-coating method; and soaking the substrate with the Al2O3 in water to form the layer having the rough surface. 6. A method for manufacturing a semiconductor device, comprising: forming a layer having a rough surface; forming a material containing a silane coupling agent over the layer having a rough surface; selectively irradiating the material containing a silane coupling agent with light to form a first region and a second region which has higher wettability with respect to a composition containing a conductive material than the first region; and forming a conductive layer using a droplet of the composition in the second region, wherein a ratio between the rough surface including an uneven shape to a rough surface region excluding an increase in surface area due to an uneven shape is 1.5 or more. 7. A method according to claim 6, wherein the silane coupling agent has an alkyl group. 8. The method according to claim 6, wherein the material containing a silane coupling agent further has a fluorocarbon group. 9. The method according to claim 6 further comprising: coating a glass substrate with an Al2O3 sol-gel solution by a spin-coating method; and soaking the substrate with the Al2O3 in water to form the layer having the rough surface. 10. A method for manufacturing a semiconductor device, comprising: forming a layer having a rough surface; selectively forming a mask layer over the layer having a rough surface; forming a material containing a silane coupling agent over the layer having a rough surface and the mask layer; removing the mask layer and the material containing a silane coupling agent over the mask layer to form a first region and a second region which has higher wettability with respect to a composition containing a conductive material than the first region; and forming a conductive layer using a droplet of the composition in the second region, wherein a ratio between the rough surface including an uneven shape to a rough surface region excluding an increase in surface area due to an uneven shape is 1.5 or more. 11. A method according to claim 10, wherein the silane coupling agent has an alkyl group. 12. The method according to claim 10 further comprising: coating a glass substrate with an Al2O3 sol-gel solution by a spin-coating method; and soaking the substrate with the Al2O3 in water to form the layer having the rough surface.