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Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain

Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

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What is claimed is: 1. A method of depositing a doped crystalline Si-containing film, comprising: providing a substrate disposed within a chamber; intermixing trisilane and a dopant precursor to form a feed gas, the dopant precursor comprising an electrical dopant; contacting the substrate with the

What is claimed is: 1. A method of depositing a doped crystalline Si-containing film, comprising: providing a substrate disposed within a chamber; intermixing trisilane and a dopant precursor to form a feed gas, the dopant precursor comprising an electrical dopant; contacting the substrate with the feed gas under chemical vapor deposition conditions; and depositing a doped crystalline Si-containing film onto the substrate at a deposition rate of at least about 10 nm per minute, the doped crystalline Si-containing film having an as-deposited resistivity of about 1.0 mΩ·cm or less prior to any activation anneal, wherein the doped crystalline Si-containing film contains less than about 3×1019 atoms cm−3 of an electrically inactive dopant. 2. The method of claim 1, wherein the electrical dopant is an n-type dopant. 3. The method of claim 2, wherein the electrical dopant comprises arsenic. 4. The method of claim 2, wherein the electrical dopant comprises phosphorous. 5. The method of claim 1, wherein the electrical dopant is a p-type dopant. 6. The method of claim 5, wherein the electrical dopant comprises boron. 7. The method of claim 1, further comprising intermixing a carbon source with the trisilane and the dopant precursor to form the feed gas. 8. The method of claim 7, wherein the carbon source is selected from the group consisting of monosilylmethane, disilylmethane, trisilylmethane, tetrasilylmethane, monomethyl silane, dimethyl silane and 1,3-disilabutane. 9. The method of claim 7, wherein the carbon source comprises monomethylsilane and the dopant precursor comprises arsenic. 10. The method of claims 7, wherein the carbon source comprises monomethylsilane and the dopant precursor comprises phosphorous. 11. The method of claim 1, further comprising intermixing a germanium source with the trisilane and the dopant precursor to form the feed gas. 12. The method of claim 11, wherein the germanium source comprises germane. 13. The method of claim 1, wherein the deposition rate is at least about 20 nm per minute. 14. The method of claim 1, further comprising introducing the feed gas to the chamber. 15. The method of claim 1, wherein the doped crystalline Si-containing film comprises at least about 3×1020 atoms cm−3 of the electrical dopant. 16. The method of claim 1, wherein the doped crystalline Si-containing film comprises at least about 4×1020 atoms cm−3 of the electrical dopant. 17. The method of claim 1, wherein the doped crystalline Si-containing film contains less than about 5×1020 atoms cm−3 of an electrical dopant. 18. The method of claim 1, wherein the doped crystalline Si-containing film contains less than about 2×1019 atoms cm−3 of an electrical inactive dopant. 19. The method of claim 1, wherein the doped crystalline Si-containing film contains less than about 1×1019 atoms cm−3 of an electrically inactive dopant. 20. The method of claim 1, wherein the doped crystalline Si-containing film has a resistivity of about 0.7 mΩ·cm or less. 21. The method of claim 1, wherein the doped crystalline Si-containing film has a resistivity of about 0.5 mΩ·cm or less. 22. The method of claim 1, wherein the doped crystalline Si-containing film has a resistivity of about 0.4 mΩ·cm or less. 23. The method of claim 1, wherein the dopant precursor comprises a dopant hydride. 24. The method of claim 23, wherein the dopant hydride is a p-type dopant hydride selected from diborane or deuterated diborane. 25. The method of claim 23, wherein the dopant hydride is a n-type dopant hydride selected from phosphine, arsenic vapor or arsine.