초록 ▼

It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a

It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

대표청구항 ▼

The invention claimed is: 1. A semiconductor device comprising: a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction so as to cross the bit lines so that a plurality of intersections of the bit lines an

The invention claimed is: 1. A semiconductor device comprising: a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction so as to cross the bit lines so that a plurality of intersections of the bit lines and the word lines are formed; a memory cell array including a plurality of memory cells, wherein said each memory cell is connected to one of the intersections; and a memory element provided in the memory cell, wherein the memory element includes the bit line, an organic compound layer, and the word line, wherein the bit line and the organic compound layer in the memory element are in contact with each other, wherein the organic compound layer and the word line in the memory element are in contact with each other, and wherein the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed. 2. A semiconductor device comprising: a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction so as to cross the bit lines so that a plurality of intersections of the bit lines and the word lines are formed; a memory cell array including a plurality of memory cells, wherein said each memory cell is connected to one of the intersections; and a memory element provided in the memory cell, wherein the memory element includes the bit line, an organic compound layer, and the word line, wherein the bit line and the organic compound layer in the memory element are in contact with each other, wherein the organic compound layer and the word line in the memory element are in contact with each other, and wherein the organic compound layer has a layered structure including a layer in which an inorganic compound and a first organic compound are mixed and a layer containing a second organic compound. 3. A semiconductor device comprising: a plurality of transistors including at least a first transistor and a second transistor formed over a substrate; a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction so as to cross the bit lines so that a plurality of intersections of the bit lines and the word lines are formed; a memory cell array including a plurality of memory cells, wherein said each memory cell is connected to one of the intersections; a memory element provided in the memory cell; and a conductive layer functioning as an antenna electrically connected to the first transistor, wherein the memory element includes the bit line, an organic compound layer, and the word line, wherein the bit line and the organic compound layer in the memory element are in contact with each other, wherein the organic compound layer and the word line in the memory element are in contact with each other, wherein at least one of the bit line and the word line is electrically connected to the second transistor, and wherein the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed. 4. A semiconductor device comprising: a plurality of transistors including at least a first transistor and a second transistor formed over a substrate; a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction so as to cross the bit lines so that a plurality of intersections of the bit lines and the word lines are formed; a memory cell array including a plurality of memory cells, wherein said each memory cell is connected to one of the intersections; a memory element provided in the memory cell; and a conductive layer functioning as an antenna electrically connected to the first transistor, wherein the memory element includes the bit line, an organic compound layer, and the word line, wherein the bit line and the organic compound layer in the memory element are in contact with each other, wherein the organic compound layer and the word line in the memory element are in contact with each other, wherein at least one of the bit line and the word line is electrically connected to the second transistor, and wherein the organic compound layer has a layered structure including a layer in which an inorganic compound and a first organic compound are mixed and a layer containing a second organic compound. 5. A semiconductor device according to claim 3 or claim 4, wherein the conductive layer functioning as an antenna is provided in the same layer as the bit line or the word line. 6. A semiconductor device according to any one of claims 1 to 4, wherein the bit line, the organic compound layer, and the word line are stacked. 7. A semiconductor device according to any one of claims 1 to 4, wherein the bit line and the word line are disposed in one plane, and the organic compound layer is provided between the bit line and the word line. 8. A semiconductor device according to any one of claims 1 to 4, wherein either or both of the bit line and the word line each have a light-transmitting property. 9. A semiconductor device according to any one of claims 1 to 4, wherein an element having rectifying properties is provided between the bit line and the organic compound layer, or between the organic compound layer and the word line. 10. A semiconductor device comprising: a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; and a memory cell array including a plurality of memory cells surrounded by the bit line and the word line, wherein the memory cells each includes a transistor and a memory element electrically connected to the transistor, wherein the memory element includes a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer and the organic compound layer are in contact with each other, wherein the organic compound layer and the second conductive layer are in contact with each other, and wherein the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed. 11. A semiconductor device comprising: a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; and a memory cell array including a plurality of memory cells surrounded by the bit lines and the word lines, wherein the memory cells each includes a transistor and a memory element electrically connected to the transistor, wherein the memory element includes a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer and the organic compound layer are in contact with each other, wherein the organic compound layer and the second conductive layer are in contact with each other, and wherein the organic compound layer has a layered structure including a layer in which an inorganic compound and a first organic compound are mixed and a layer containing a second organic compound. 12. A semiconductor device comprising: a plurality of transistors including at least a first transistor and a second transistor formed over a substrate; a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells surrounded by the bit lines and the word lines; and a conductive layer functioning as an antenna electrically connected to the first transistor, wherein the memory cells each include the second transistor and a memory element electrically connected to the second transistor, wherein the memory element includes a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer and the organic compound layer are in contact with each other, wherein the organic compound layer and the second conductive layer are in contact with each other, wherein at least one of the bit line and the word line is electrically connected to the second transistor, and wherein the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed. 13. A semiconductor device comprising: a plurality of transistors including at least a first transistor and a second transistor formed over a substrate; a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells surrounded by the bit lines and the word lines; and a conductive layer functioning as an antenna electrically connected to the first transistor, wherein the memory cells each include the second transistor and a memory element electrically connected to the second transistor, wherein the memory element includes a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer and the organic compound layer are in contact with each other, wherein the organic compound layer and the second conductive layer are in contact with each other, wherein at least one of the bit line and the word line is electrically connected to the second transistor, and wherein the organic compound layer has a layered structure including a layer in which an inorganic compound and a first organic compound are mixed and a layer containing a second organic compound. 14. A semiconductor device according to claim 12 or claim 13, wherein the conductive layer functioning as an antenna is provided in the same layer as the first conductive layer or the second conductive layer. 15. A semiconductor device according to any one of claims 10 to 13, wherein the first conductive layer, the organic compound layer, and the second conductive layer are stacked. 16. A semiconductor device according to any one of claims 10 to 13, wherein the first conductive layer and the second conductive layer are disposed in one plane, and the organic compound layer is provided between the first conductive layer and the second conductive layer. 17. A semiconductor device according to any one of claims 10 to 13, wherein either or both of the first conductive layer and the second conductive layer each have a light-transmitting property. 18. A semiconductor device according to any one of claims 10 to 13, wherein an element having rectifying properties is provided between the first conductive layer and the organic compound layer, or between the organic compound layer and the second conductive layer. 19. A semiconductor device according to any one of claims 3, 4 and 10 to 13, wherein the transistor is an organic transistor. 20. A semiconductor device according to any one of claims 3, 4 and 10 to 13, wherein the transistor is provided over a glass substrate. 21. A semiconductor device according to any one of claims 10 to 13, wherein the transistor is provided over a flexible substrate. 22. A semiconductor device according to any one of claims 1 to 4 and 10 to 13, wherein the inorganic compound is a metal oxide film or a metal nitride film. 23. A semiconductor device according to any one of claims 1 to 4 and 10 to 13, wherein the organic compound layer contains an electron transporting material or a hole transporting material.