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Radiation-emitting semiconductor element and method for producing the same

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 UP-0067349 (2005-02-25)
등록번호 US-7691659 (2010-05-20)
우선권정보 DE-100 20 464(2000-04-26); DE-100 26 255(2000-05-26); DE-100 51 465(2000-10-17)
발명자 / 주소
  • Bader, Stefan
  • Hahn, Berthold
  • Härle, Volker
  • Lugauer, Hans-Jürgen
  • Mundbrod-Vangerow, Manfred
  • Eisert, Dominik
출원인 / 주소
  • Osram GmbH
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 7  인용 특허 : 73

초록

This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being

대표청구항

What is claimed is: 1. Method for producing a radiation-emitting semiconductor component whose semiconductor body includes a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surfac

이 특허에 인용된 특허 (73)

  1. Krames Michael Ragan ; Martin Paul Scott ; Tan Tun Sein, AlGaInN-based LED having thick epitaxial layer for improved light extraction.
  2. Linn Jack H. (Melbourne FL) Lowry Robert K. (Melbourne Beach FL) Rouse George V. (Indiatlantic FL) Buller James F. (Austin TX) Speece William H. (Palm Bay FL), Bonded wafer processing.
  3. Noguchi Masahiro (Ushiku JPX) Ibuka Toshihiko (Ushiku JPX), Compound semiconductor device and method for surface treatment.
  4. Bastek John J. (Reading PA), Contact structure for light emitting device.
  5. Carter-Coman Carrie ; Hofler Gloria ; Kish ; Jr. Fred A., Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip.
  6. Edmond John A. ; Kong Hua-Shuang, Double heterojunction light emitting diode with gallium nitride active layer.
  7. Huibers, Andrew G., Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements.
  8. Lebailly Jacques (Caen FRX) Varon Jacques (Troarn FRX), Electroluminescent semiconductor device.
  9. Redwing Joan ; Tischler Michael A., High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same.
  10. Tischler Michael A. (Danbury CT), High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same.
  11. Chen, Tzer-Perng, High efficiency light emitting diode and method of making the same.
  12. Carter ; Jr. Calvin H. (Raleigh NC), High efficiency light emitting diodes from bipolar gallium nitride.
  13. Haitz Roland H. ; Kish ; Jr. Fred A., Highly reflective contacts for light emitting semiconductor devices.
  14. Schetzina Jan Frederick, Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well.
  15. Baber Samuel C. (Richardson TX), Laser assisted lift-off.
  16. Xingkun Wu ; Jouni P. Partanen ; William F. Hug ; Hamid Hemmati, Laser with absorption optimized pumping of a gain medium.
  17. Lester Steven D., Light emitting device having a finely-patterned reflective contact.
  18. Lester Steven D., Light emitting device having a finely-patterned reflective contact.
  19. Matsumoto Kenji (Kanagawa JPX), Light emitting diode resistant to change in operating temperature.
  20. Runge Hartmut (Kirchseeon DEX), Light emitting semiconductor component.
  21. Bader,Stefan; Hahn,Berthold; H��rle,Volker; Lugauer,Hans J��rgen; Mundbrod Vangerow,Manfred, Light emitting-diode chip and a method for producing same.
  22. Koike, Masayoshi, Light-emitting device using group III nitride compound semiconductor.
  23. Nakamura Shuji (Anan JPX) Mukai Takashi (Anan JPX) Iwasa Naruhito (Anan JPX), Light-emitting gallium nitride-based compound semiconductor device.
  24. Sassa Michinari,JPX ; Koide Norikatsu,JPX ; Yamazaki Shiro,JPX ; Umezaki Junichi,JPX ; Shibata Naoki,JPX ; Koike Masayoshi,JPX ; Akasaki Isamu,JPX ; Amano Hiroshi,JPX, Light-emitting semiconductor device using gallium nitride compound.
  25. Uemura, Toshiya; Horiuchi, Shigemi, Light-emitting semiconductor device using group III nitride compound.
  26. Haerle Volker,DEX, Method for fabricating a plurality of semiconductor bodies.
  27. Bader, Stefan; Fehrer, Michael; Hahn, Berthold; H?rle, Volker; Lugauer, Hans-J?rgen, Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip.
  28. Gotou Hiroshi (Niiza JPX), Method for fabricating a silicon carbide substrate.
  29. Kono Mitsuo,JPX ; Matsumoto Kei,JPX, Method for fabricating an SOI substrate.
  30. Nai-Chuan Chen TW; Bor-Jen Wu TW; Yuan-Hsin Tzou TW; Nae-Guann Yih TW; Chien-An Chen TW, Method for forming a semiconductor device having a metallic substrate.
  31. Bowers John E. ; Sink R. Kehl ; Denbaars Steven P., Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials.
  32. Goossen Keith W. (Aberdeen NJ), Method for manufacturing integrated semiconductor devices.
  33. Michael A. Kneissl ; David P. Bour ; Ping Mei ; Linda T. Romano, Method for nitride based laser diode with growth substrate removed.
  34. Biebl Markus,DEX, Method for producing a layer with reduced mechanical stresses.
  35. Goesele Ulrich M. ; Tong Q.-Y., Method for the transfer of thin layers of monocrystalline material to a desirable substrate.
  36. Mori Kazuo,JPX, Method of bonding a III-V group compound semiconductor layer on a silicon substrate.
  37. Toshiya Uemura JP; Takahide Oshio JP, Method of fabricating a semiconductor light-emitting element.
  38. Yuri Masaaki,JPX ; Ueda Tetsuzo ; Baba Takaaki, Method of forming gallium nitride crystal.
  39. Ota, Hiroyuki, Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate.
  40. Ishida, Masahiro; Ueda, Daisuke; Yuri, Masaaki, Method of manufacturing nitride semiconductor substrate.
  41. Streubel, Klaus, Method of producing an optically transparent substrate and method of producing a light-emitting semiconductor chip.
  42. Kelly, Michael; Ambacher, Oliver; Stutzmann, Martin; Brandt, Martin; Dimitrov, Roman; Handschuh, Robert, Method of separating two layers of material from one another and electronic components produced using this process.
  43. Carrie Carter Coman ; R. Scott Kern ; Fred A. Kish, Jr. ; Michael R Krames ; Arto V. Nurmikko ; Yoon-Kyu Song, Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks.
  44. McIntosh Forrest Gregg ; Bedair Salah Mohamed ; El-Masry Nadia Ahmed ; Roberts John Claassen, Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows.
  45. Chai Bruce H. T. (Oviedo FL), Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film g.
  46. Haruhiko Okazaki JP; Koichi Nitta JP; Chiharu Nozaki JP, Nitride semiconductor LED with embossed lead-out surface.
  47. Evans Herbert J. ; Kini R. Manjunatha,SGX, Polypeptides that include conformation-constraining groups which flank a protein-protein interaction site.
  48. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  49. Gerner Jochen (Wiesloch DEX), Radiation-emitting diode with improved radiation output.
  50. Bader, Stefan; Hahn, Berthold; H?rle, Volker; Lugauer, Hans-J?rgen; Mundbrod-Vangerow, Manfred; Eisert, Dominik, Radiation-emitting semiconductor element and method for producing the same.
  51. Linda T. Romano ; Brent S. Krusor ; Christopher L. Chua ; Noble M. Johnson ; Rose M. Wood ; Jack Walker, Removable large area, low defect density films for led and laser diode growth.
  52. Moslehi Mehrdad M. (Dallas TX), SOI/semiconductor heterostructure fabrication by wafer bonding.
  53. Rennie John,JPX ; Hatakoshi Genichi,JPX, Semiconductor device.
  54. Ishida, Masahiro; Nakamura, Shinji; Orita, Kenji; Imafuji, Osamu; Yuri, Masaaki, Semiconductor device and semiconductor substrate, and method for fabricating the same.
  55. Itaya Kazuhiko,JPX ; Yamamoto Masahiro,JPX ; Onomura Masaaki,JPX ; Fujimoto Hidetoshi,JPX ; Hatakoshi Genichi,JPX ; Sugawara Hideto,JPX ; Ishikawa Masayuki,JPX ; Rennie John,JPX ; Saito Shinji,JPX, Semiconductor device capable of easily forming cavity and its manufacturing method.
  56. Hans Peter Gauggel CH; Karl Heinz Gulden CH, Semiconductor laser device and method for fabrication thereof.
  57. Hayafuji Norio (Itami JPX) Kawazu Zempei (Itami JPX), Semiconductor laser producing short wavelength light.
  58. Tsutsui Tsuyoshi,JPX, Semiconductor light emitting device.
  59. Tzer-Perng Chen TW; Rong-Yih Hwang TW; Charng-Shyang Jong TW, Semiconductor light emitting device.
  60. Kon, Satoshi; Takeshima, Kazuki; Sonoda, Junichi, Semiconductor light emitting device and its manufacture.
  61. Okazaki, Haruhiko; Nitta, Koichi; Nozaki, Chiharu, Semiconductor light emitting device and its manufacturing method.
  62. Rennie John,JPX ; Hatakoshi Genichi,JPX ; Onomura Masaaki,JPX, Semiconductor light emitting device and method of manufacturing the same.
  63. Yoshida Hiroaki,JPX ; Itaya Kazuhiko,JPX ; Saito Shinji,JPX ; Nishio Johji,JPX ; Nunoue Shinya,JPX, Semiconductor light emitting element, and its manufacturing method.
  64. Heinen Jochen,DEX, Semiconductor light source formed of layer stack with total thickness of 50 microns.
  65. Nishio Johji,JPX ; Fujimoto Hidetoshi,JPX ; Itaya Kazuhiko,JPX, Semiconductor light-emitting device.
  66. Imler, William R., Separation method for gallium nitride devices on lattice-mismatched substrates.
  67. Nathan W. Cheung ; Timothy D. Sands ; William S. Wong, Separation of thin films from transparent substrates by selective optical processing.
  68. Soref Richard A. ; Namavar Fereydoon, SiC/111-V-nitride heterostructures on SiC/SiO.sub.2 /Si for optoelectronic devices.
  69. Kub Francis J. ; Hobart Karl D., Single-crystal material on non-single-crystalline substrate.
  70. Wong, William S.; Biegelsen, David K.; Kneissl, Michael A., Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates.
  71. Kotecki David E. ; Ma William H., Trench separator for self-defining discontinuous film.
  72. Edmond John A. (Cary NC) Bulman Gary E. (Cary NC) Kong Hua-Shuang (Raleigh NC) Dmitriev Vladimir (Fuquay-Varina NC), Vertical geometry light emitting diode with group III nitride active layer and extended lifetime.
  73. Kish Fred A. (San Jose CA) Steranka Frank M. (San Jose CA) DeFevere Dennis C. (Palo Alto CA) Robbins Virginia M. (Los Gatos CA) Uebbing John (Palo Alto CA), Wafer bonding of light emitting diode layers.

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  1. Eichler, Christoph; Härle, Volker; Rumbolz, Christian; Strauss, Uwe, Edge-emitting semiconductor laser chip.
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  3. Doan, Trung Tri; Yen, Jui Kang, LLB bulb having light extracting rough surface pattern (LERSP) and method of fabrication.
  4. Lunev, Alexander; Dobrinsky, Alexander; Shatalov, Maxim S.; Gaska, Remigijus; Shur, Michael, Ultraviolet reflective contact.
  5. Lunev, Alexander; Dobrinsky, Alexander; Shatalov, Maxim S.; Gaska, Remigijus; Shur, Michael, Ultraviolet reflective contact.
  6. Gaska, Remigijus; Shatalov, Maxim S.; Dobrinsky, Alexander; Yang, Jinwei; Shur, Michael; Simin, Grigory, Ultraviolet reflective rough adhesive contact.
  7. Gaska, Remigijus; Shatalov, Maxim S.; Lunev, Alexander; Dobrinsky, Alexander; Yang, Jinwei; Shur, Michael, Ultraviolet reflective rough adhesive contact.
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