Substrate with organic thin film, and transistor using same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-035/24
H01L-051/00
출원번호
UP-0594152
(2005-03-24)
등록번호
US-7692184
(2010-05-20)
우선권정보
JP-2004-088077(2004-03-24)
국제출원번호
PCT/JP2005/006199
(2005-03-24)
§371/§102 date
20060925
(20060925)
국제공개번호
WO05/091377
(2005-09-29)
발명자
/ 주소
Koinuma, Hideomi
Itaka, Kenji
Yamashiro, Mitsugu
출원인 / 주소
Japan Science and Technology Agency
대리인 / 주소
Westerman, Hattori, Daniels & Adrian, LLP
인용정보
피인용 횟수 :
2인용 특허 :
4
초록▼
A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with
A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.
대표청구항▼
What is claimed is: 1. A substrate having an organic thin film, characterized in that: a buffer layer and the organic thin film are sequentially deposited on a substrate so that the organic thin film overlies the buffer layer, wherein said substrate is an insulating substrate, said buffer layer con
What is claimed is: 1. A substrate having an organic thin film, characterized in that: a buffer layer and the organic thin film are sequentially deposited on a substrate so that the organic thin film overlies the buffer layer, wherein said substrate is an insulating substrate, said buffer layer consisting essentially of either pentacene or pentacene fluoride; said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene; and said organic thin film is a two dimensional film. 2. The substrate having an organic thin film as set forth in claim 1, characterized in that a layer easily oriented with said buffer layer is further inserted between said substrate and said buffer layer. 3. The substrate having an organic thin film as set forth in claim 1, characterized in that said insulating substrate is a sapphire substrate and said Cn fullerene is C60. 4. The substrate having an organic thin film as set forth in claim 3, characterized in that the surface of said sapphire substrate is flattening-treated, and said buffer layer consists of either pentacene or pentacene fluoride deposited as a molecular layer unit. 5. A transistor provided with an organic thin film formed on a substrate, characterized in that: said organic thin film is deposited on said substrate via a buffer layer, and orienting said organic thin film flatly; wherein said substrate is an insulating substrate, said buffer layer consisting essentially of either pentacene or pentacene fluoride; wherein the organic thin film overlies the buffer layer; said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene; and said organic thin film is a two dimensional film. 6. The transistor as set forth in claim 5, characterized in that a layer easily oriented with said buffer layer is further inserted between said substrate and said buffer layer. 7. The transistor as set forth in claim 5, characterized in that said insulating substrate is a sapphire substrate, and said Cn fullerene is C60. 8. The transistor as set forth in claim 7, characterized in that the surface of said sapphire substrate is flattening-treated, and said buffer layer consists of either pentacene or pentacene fluoride deposited as a molecular layer unit. 9. A substrate having an organic thin film, characterized in that: a buffer layer and an organic thin film are sequentially deposited on the substrate so that the organic thin film overlies the buffer layer, said buffer layer consists essentially of either pentacene or pentacene fluoride, said buffer layer orients said organic thin film flatly, and said organic thin film is a two dimensional film. 10. A substrate having an organic thin film, characterized in that: a buffer layer and the organic thin film are sequentially deposited on a substrate so that the organic thin film overlies the buffer layer; said buffer layer consists essentially of either pentacene or pentacene fluoride, said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene, said buffer layer orients said organic thin film flatly, and said organic thin film is a two dimensional film. 11. A transistor, characterized in that: it is a transistor having an organic thin film formed on a substrate, said organic thin film is deposited on said substrate via a buffer layer consisting essentially of either pentacene or pentacene fluoride, said buffer layer orienting the organic thin film flatly, wherein the organic thin film overlies the buffer layer, and said organic thin film is a two dimensional film. 12. A transistor, characterized in that: it is a transistor having an organic thin film formed on substrate, said organic thin film is deposited on said substrate via a buffer layer consisting essentially of either pentacene or pentacene fluoride, said buffer layer orienting the organic thin film flatly, and said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene, wherein the organic thin film overlies the buffer layer, and said organic thin film is a two dimensional film.
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이 특허에 인용된 특허 (4)
Tsumura Akira (Amagasaki JPX) Fuchigami Hiroyuki (Amagasaki JPX) Nobutoki Hideharu (Amagasaki JPX) Koezuka Hiroshi (Amagasaki JPX), Field-effect transistor with at least two different semiconductive organic channel compounds.
Tommie W. Kelley ; Dawn V. Muyres ; Mark J. Pellerite ; Timothy D. Dunbar ; Larry D. Boardman ; Terrance P. Smith, Surface modifying layers for organic thin film transistors.
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