초록 ▼

A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from ab

A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

대표청구항 ▼

We claim: 1. A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing, said ceramic article including a solid solution ceramic having at least two phases, said solid solution ceramic formed from yttrium oxide at a molar concentration ranging fro

We claim: 1. A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing, said ceramic article including a solid solution ceramic having at least two phases, said solid solution ceramic formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, said at least one other component concentration ranging from about 10 mole % to about 30 mole %. 2. A ceramic article in accordance with claim 1, wherein said solid solution ceramic is formed from yttrium oxide at a concentration ranging from about 55 mole % to about 65 mole %, zirconium oxide at a concentration ranging from about 15 mole % to about 25 mole % and said at least one other component at a concentration ranging from about 10 mole % to about 25 mole %. 3. A ceramic article in accordance with claim 2, wherein said solid solution ceramic is formed from yttrium oxide at a concentration ranging from about 55 mole % to about 65 mole %, zirconium oxide at concentration ranging from about 20 mole % to about 25 mole %, and said at least one other component at a concentration ranging from about 10 mole % to about 20 mole %. 4. A ceramic article in accordance with claim 1, or claim 2, or claim 3, wherein said at least one other component is aluminum oxide. 5. A ceramic article in accordance with claim 4, wherein a mean grain size of said ceramic ranges from about 0.5 μm to about 10 μm. 6. A ceramic article in accordance with claim 1, wherein a flexural strength of said solid solution ceramic ranges from about 150 MPa to about 250 MPa. 7. A ceramic article in accordance with claim 1, wherein a fracture toughness of said solid solution ceramic ranges from about 1.5 MPa·m1/2 to about 2.0 MPa·m1/2. 8. A ceramic article in accordance with claim 1, wherein said article is selected from the group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner. 9. A ceramic article in accordance with claim 4, wherein said article is selected from the group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner. 10. A method of reducing the plasma erosion of a semiconductor processing apparatus contacted by a halogen-containing plasma, comprising: employing a solid solution ceramic-comprising article, said solid solution ceramic formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, said at least one other component concentration ranging from about 10 mole % to about 30 mole %. 11. A method in accordance with claim 10, wherein said solid solution ceramic-comprising article is formed from yttrium oxide at a molar concentration ranging from about 55 mole % to about 65 mole %, zirconium oxide at a concentration ranging from about 15 mole % to about 25 mole % and said at least one other component at a concentration ranging from about 10 mole % to about 25 mole %. 12. A method in accordance with claim 11, wherein said solid solution ceramic-comprising article is formed from yttrium oxide at a concentration ranging from about 55 mole % to about 65 mole %, zirconium oxide at concentration ranging from about 20 mole % to about 25 mole %, and said at least one other component at a concentration ranging from about 10 mole % to about 20 mole %. 13. A method in accordance with claim 10, or claim 11, or claim 12, wherein said at least one other component is selected to be aluminum oxide. 14. A method in accordance with claim 10, wherein said plasma erosion rate for a surface of said semiconductor processing apparatus upon exposure to a halogen-comprising plasma is less than about 0.3 μm/hr. 15. A method in accordance with claim 14, wherein said plasma erosion rate for a surface of said semiconductor processing apparatus upon exposure to a halogen-comprising plasma ranges from about 0.1 to about 0.3 μm/hr. 16. A method in accordance with claim 13, wherein said plasma erosion rate for a surface of said semiconductor processing apparatus upon exposure to a halogen-comprising plasma is less than about 0.3 μm/hr. 17. A method in accordance with claim 16, wherein said plasma erosion rate for a surface of said semiconductor processing apparatus upon exposure to a halogen-comprising plasma ranges from about 0.1 to about 0.3 μm/hr. 18. A semiconductor processing apparatus which has at least one surface exposed to a halogen-comprising plasma during said semiconductor processing, wherein said semiconductor processing apparatus surface is a solid solution ceramic, said solid solution ceramic being resistant to erosion by halogen-containing plasmas, wherein said ceramic includes at least two phases and is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, said at least one other component concentration ranging from about 10 mole % to about 30 mole %. 19. A semiconductor processing apparatus in accordance with claim 18, wherein underlying said solid solution ceramic is a high purity aluminum alloy. 20. A semiconductor processing apparatus in accordance with claim 19, wherein said apparatus is selected from the group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner. 21. A semiconductor processing apparatus in accordance with claim 18, wherein said apparatus is a solid ceramic semiconductor processing apparatus. 22. A semiconductor processing apparatus in accordance with claim 21, wherein said apparatus is selected from the group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner. 23. A method of reducing the plasma erosion of a semiconductor processing apparatus contacted by a halogen-containing plasma, comprising: spray coating at least a surface of said semiconductor processing apparatus which is exposed to said plasma with a solid solution ceramic formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, said at least one other component concentration ranging from about 10 mole % to about 30 mole %. 24. A method in accordance with claim 23, wherein said spray coating is applied over said surface which is exposed to said plasma using thermal spraying or flame spraying or plasma spraying. 25. A method in accordance with claim 23, wherein said surface is at a temperature of at least about 150° C.-200° C. at the time said spray coating is carried out. 26. A method in accordance with claim 23, wherein said surface over which said coating is sprayed is a metal or a ceramic surface. 27. A method in accordance with claim 24, wherein said surface over which said coating is sprayed is a metal or a ceramic surface. 28. A method in accordance with claim 25, wherein said surface over which said coating is sprayed is a metal or a ceramic surface. 29. A method in accordance with claim 26, wherein said surface over which said coating is sprayed is selected from the group consisting of aluminum, aluminum alloy, stainless steel, alumina, aluminum nitride, quartz, and combinations thereof. 30. A method in accordance with claim 27, wherein said surface over which said coating is sprayed is selected from the group consisting of aluminum, aluminum alloy, stainless steel, alumina, aluminum nitride, quartz, and combinations thereof. 31. A method in accordance with claim 28, wherein said surface over which said coating is sprayed is selected from the group consisting of aluminum, aluminum alloy, stainless steel, alumina, aluminum nitride, quartz, and combinations thereof. 32. A method in accordance with claim 31, wherein said aluminum alloy is a high purity aluminum alloy. 33. A method in accordance with claim 29, wherein said surface over which said coating is sprayed is aluminum oxide or aluminum nitride. 34. A method in accordance with claim 30, wherein said surface over which said coating is sprayed is aluminum oxide or aluminum nitride. 35. A method in accordance with claim 31, wherein said surface over which said coating is sprayed is aluminum oxide or aluminum nitride.