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Apparatus for processing materials in supercritical fluids and methods thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-035/00
출원번호 UP-0042858 (2005-01-25)
등록번호 US-7704324 (2010-05-20)
발명자 / 주소
  • D'Evelyn, Mark Philip
  • Giddings, Robert Arthur
  • Sharifi, Fred
  • Dey, Subhrajit
  • Hong, Huicong
  • Kapp, Joseph Alexander
  • Khare, Ashok Kumar
출원인 / 주소
  • General Electric Company
대리인 / 주소
    McDonald Hokins LLC
인용정보 피인용 횟수 : 55  인용 특허 : 38

초록

An apparatus and method for processing materials in supercritical fluids is disclosed. The apparatus includes a capsule configured to contain a supercritical fluid, a high strength enclosure disposed about the capsule and a sensor configured to sense pressure difference between an interior and an ex

대표청구항

The invention claimed is: 1. An apparatus comprising: a capsule configured to contain a supercritical fluid; a pressure vessel disposed about the capsule, wherein the pressure vessel is configured to contain a pressurized gas surrounding the capsule; a pressure control device configured to balance

이 특허에 인용된 특허 (38)

  1. Dugger Cortland O. (Newton MA), Aluminum nitride single crystal growth from a molten mixture with calcium nitride.
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  3. Shrinivasan, Krishnan; Banerjee, Souvik; Juarez, Francisco; Reinhardt, Karen A.; Gopinath, Sanjay, Apparatus and methods for processing semiconductor substrates using supercritical fluids.
  4. Wilson Herbert L. (Woodbridge VA) Guiterrez William A. (Woodbridge VA), Apparatus for producing high quality epitaxially grown semiconductors.
  5. Eagar Lee J. (P.O. Box 297 Hurricane UT 84737), Beverage container.
  6. Ter-Minassian Leon (Fresnes FR) Pruzan Philippe (L\Hay-les-Roses FR) Figuiere Pierre (Bourg-la-Reine FR) Szwarc Henri (Saint-Germain-en-Laye FR), Calorimeters for making measurements at pressures above 1000 bars.
  7. Lupton David Francis,DEX ; Schielke Jorg,DEX ; Weigelt Manfred,DEX ; Petermann Klaus,DEX ; Mix Eric,DEX ; Fornasiero Livio,DEX, Crucible for growing single crystals, process for making the same and use of the same.
  8. Young Morris S. S. (Danville CA) Zhang Shanxiang (Santa Clara CA), Crystal growth apparatus and process.
  9. Mark Philip D'Evelyn ; Kristi Jean Narang, Crystalline gallium nitride and method for forming crystalline gallium nitride.
  10. Suthanthiran Krishnan (Lorton VA), Device and method for encapsulating radioactive materials.
  11. Suscavage, Michael J.; Bliss, David F.; Callahan, Michael J.; Iseler, Gerald W.; Bailey, John S., Forming metal nitrides.
  12. Robert V. Leonelli, Jr., High pressure apparatus having transition slope binding ring that mitigates tensile stresses and corresponding method.
  13. Frushour Robert H. (2313 Devonshire Ann Arbor MI 48104), High pressure reaction vessel.
  14. D'Evelyn,Mark P.; Leonelli, Jr.,Robert V.; Allison,Peter S.; Narang,Kristi J.; Giddings,Robert A., High pressure/high temperature apparatus with improved temperature control for crystal growth.
  15. Kokta Milan R. (San Diego CA) Linares Robert C. (Warren Township ; Somerset County NJ) Di Giuseppe Michael A. (Succasunna NJ), Lanthanum indium gallium garnets.
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  17. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon.
  18. Fujikawa Takao,JPX ; Narukawa Yutaka,JPX ; Masuda Tsuneharu,JPX ; Kadoguchi Makoto,JPX, Method and device for high-temperature, high-pressure treatment of semiconductor wafer.
  19. Hammond David A. ; Buzniak Jan J. ; Grencewicz Kimberly A. ; Vukcevich Milan R., Method for growing crystal.
  20. Ciuti Brunello (San Donato Milanese IT) Angelini Ferdinando (Milan IT) Brandolese Ernesto (Grafignana IT), Method for the preparation in a continuous way of water/oil emulsions and apparatus suitable therefor.
  21. Shibata Masatomo,JPX ; Furuya Takashi,JPX, Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method.
  22. Porowski Sylwester,PLX ; Bockowski Michal,PLX ; Grzegory Izabella,PLX ; Krukowski Stanislaw,PLX ; Leszczynski Michal,PLX ; Lucznik Boleslaw,PLX ; Suski Tadeusz,PLX ; Wroblewski Miroslaw,PLX, Method of fabrication of highly resistive GaN bulk crystals.
  23. Hirano Shinichi (123 ; Meidai Yada-cho Syukusha ; 66 ; Yada-cho 2-chome Higashi-ku ; Aichi-ken JPX) Toyokuni Ryo (Tokyo JPX) Kuroda Hiroshi (Tokyo JPX), Method of manufacturing calcium carbonate single crystal.
  24. Preston Kenneth G., Nitride compacts.
  25. Watanabe Kyoichi A. (Rye Brook NY) Matulic-Adamic Jasenka (Mamaroneck NY) Price Richard W. (Scarsdale NY) Fox Jack J. (White Plains NY), Nucleosides of 5-monofluoromethyluracil and 5-difluoromethyluracil.
  26. Yellowlees John M. (Cheshire GB2), Pressure vessels.
  27. Meckie T. Harris ; Michael J. Suscavage ; David F. Bliss ; John S. Bailey ; Michael Callahan, Process and apparatus for the growth of nitride materials.
  28. Kemp, Willard E., Process for hot isostatic pressing of a metal workpiece.
  29. Hirano Shinichi (123 ; Meidai Yada-cho Syukusya ; 66 ; Yada-cho 2-chome Higashi-ku ; Nagoya-shi ; Aichi-ken JPX), Process for manufacturing calcium carbonate single crystal.
  30. Purdy Andrew P., Process for preparing bulk cubic gallium nitride.
  31. Suscavage Michael J. ; Harris Meckie T. ; Bliss David F. ; Bailey John S. ; Callahan Michael, Process for the manufacture of group III nitride targets for use in sputtering and similar equipment.
  32. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Iwata, Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate.
  33. Adamski Joseph A. (Framingham MA) Ahern Brian S. (Boxboro MA), Rapid synthesis of indium phosphide.
  34. von Platen Baltzar C. (Ystad SEX), Reaction vessel.
  35. Kilham Lawrence B. (Secaucus NJ) LeBlon Maurice W. (East Brunswick NJ), Sampling flow cell with diamond window.
  36. D'Evelyn, Mark P.; Pender, David C.; Vagarali, Suresh S.; Park, Dong-Sil, Sintered polycrystalline gallium nitride and its production.
  37. Zacharias ; Jr. Ellis M. (Tulsa OK), Sonic flow meter having improved flow straighteners.
  38. Saho Norihide,JPX ; Isogami Hisashi,JPX ; Morita Minoru,JPX ; Shibano Yoshiki,JPX, Supercritical oxidation process and apparatus.

이 특허를 인용한 특허 (55)

  1. Poblenz, Christiane; Speck, James S.; Kamber, Derrick S., Ammonothermal method for growth of bulk gallium nitride.
  2. D'Evelyn, Mark P., Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride.
  3. Pakalapati, Rajeev Tirumala; D'Evelyn, Mark P., Apparatus for high pressure reaction.
  4. Rajeev, Pakalapati Tirumala; Pocius, Douglas W.; D'Evelyn, Mark P., Apparatus for large volume ammonothermal manufacture of gallium nitride crystals and methods of use.
  5. Afimiwala, Kirsh; Zeng, Larry, Apparatus for processing materials at high temperatures and pressures.
  6. Rajeev, Pakalapati Tirumala; Pocius, Douglas Wayne; Kamber, Derrick S.; Coulter, Michael, Capsule for high pressure, high temperature processing of materials and methods of use.
  7. Fishman, Oleg S., Directional solidification of silicon by electric induction susceptor heating in a controlled environment.
  8. Raring, James W.; Rudy, Paul; Khosla, Vinod; Lamond, Pierre; Denbaars, Steven P.; Nakamura, Shuji; Ogawa, Richard T., Gallium and nitrogen containing laser diode dazzling devices and methods of use.
  9. Raring, James W.; Rudy, Paul; Khosla, Vinod; Lamond, Pierre; Denbaars, Steven P.; Nakamura, Shuji; Ogawa, Richard T., Gallium and nitrogen containing laser diode dazzling devices and methods of use.
  10. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling device and method.
  11. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling device and method.
  12. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling method.
  13. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William, Gallium-nitride-on-handle substrate materials and devices and method of manufacture.
  14. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William D., Gallium—nitride-on-handle substrate materials and devices and method of manufacture.
  15. Hashimoto, Tadao; Letts, Edward, Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride.
  16. Schmidt, Mathew; D'Evelyn, Mark P., High indium containing InGaN substrates for long wavelength optical devices.
  17. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  18. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  19. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  20. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  21. Pakalapati, Rajeev T.; D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  22. D'Evelyn, Mark P.; Kapp, Joseph A.; Lawrenson, John C., High pressure apparatus with stackable rings.
  23. Jiang, Wenkan; D'Evelyn, Mark P.; Kamber, Derrick S.; Ehrentraut, Dirk; Krames, Michael, High quality group-III metal nitride crystals, methods of making, and methods of use.
  24. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal.
  25. D'Evelyn, Mark P.; Speck, James S.; Kamber, Derrick S.; Pocius, Douglas W., Large area nitride crystal and method for making it.
  26. D'Evelyn, Mark P.; Speck, James; Houck, William; Schmidt, Mathew; Chakraborty, Arpan, Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices.
  27. D'Evelyn, Mark P.; Jiang, Wenkan; Kamber, Derrick S.; Pakalapati, Rajeev T.; Krames, Michael R., Large area seed crystal for ammonothermal crystal growth and method of making.
  28. D'Evelyn, Mark P.; Ehrentraut, Dirk; Jiang, Wenkan; Downey, Bradley C., Large area, low-defect gallium-containing nitride crystals, method of making, and method of use.
  29. Raring, James W.; Rudy, Paul, Laser device and method for a vehicle.
  30. Raring, James W.; Rudy, Paul, Laser device and method for a vehicle.
  31. D'Evelyn, Mark P.; Poblenz, Christiane; Krames, Michael R., Method for growth of indium-containing nitride films.
  32. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, Method for producing group III-nitride wafers and group III-nitride wafers.
  33. Jiang, Wenkan; Ehrentraut, Dirk; Downey, Bradley C.; D'Evelyn, Mark P., Method for quantification of extended defects in gallium-containing nitride crystals.
  34. D'Evelyn, Mark P.; Speck, James S., Method for synthesis of high quality large area bulk gallium based crystals.
  35. Krames, Mike; D'Evelyn, Mark; Pakalapati, Rajeev; Alexander, Alex; Kamber, Derrick, Method of making bulk InGaN substrates and devices thereon.
  36. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori, Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth.
  37. D'Evelyn, Mark P.; Sharma, Rajat, Microcavity light emitting diode method of manufacture.
  38. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
  39. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M., Photonic-crystal light emitting diode and method of manufacture.
  40. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M.; Feezell, Daniel F., Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors.
  41. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  42. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  43. D'Evelyn, Mark P., Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer.
  44. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  45. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  46. D'Evelyn, Mark P., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  47. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  48. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules.
  49. D'Evelyn, Mark P., Semi-insulating group III metal nitride and method of manufacture.
  50. Sharma, Rajat; Hall, Eric M.; Poblenz, Christiane; D'Evelyn, Mark P., Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods.
  51. Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P., Transparent group III metal nitride and method of manufacture.
  52. Alexander, Alex; Nink, Jr., John W.; D'Evelyn, Mark P., Ultrapure mineralizers and methods for nitride crystal growth.
  53. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  54. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  55. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
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