초록 ▼

Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the la

Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

대표청구항 ▼

We claim: 1. A method of making a semiconductor apparatus, comprising the steps of: providing a substrate having a substrate surface; forming a layer of a first material overlying a first region of said substrate surface; forming a layer of a second material overlying a second region of said substr

We claim: 1. A method of making a semiconductor apparatus, comprising the steps of: providing a substrate having a substrate surface; forming a layer of a first material overlying a first region of said substrate surface; forming a layer of a second material overlying a second region of said substrate surface; and forming a layer of a semiconductor overlying said layer of first material and overlying said layer of second material; a first region of said layer of semiconductor overlying said layer of first material and including crystal grains having a first average crystal grain size, a second region of said layer of semiconductor overlying said layer of second material and including crystal grains having a second average crystal grain size, said first average crystal grain size being substantially different from said second average crystal grain size; wherein said layer of first material overlies said second region of said substrate surface; and wherein said layer of second material is between said layer of semiconductor and said layer of first material. 2. The method of claim 1, wherein each of the first and second materials includes a polymer. 3. The method of claim 1, wherein said first material includes a member selected from the group consisting of: poly(para-vinyl phenol), poly(4-vinylpyridine), poly(2-vinylnaphthalene), poly(meta-vinyl phenol), poly(ortho-vinyl phenol), poly(para-vinyl phenol)-co-2-hydroxyethylmethacrylate, poly(2-vinylpyridine), poly(2-vinylnaphthalene-co-2-ethylhexyl acrylate, poly(1-vinylnaphthalene), and blends including two or more of the foregoing. 4. The method of claim 1, wherein said second material includes a member selected from the group consisting of: poly(n-butyl methacrylate), poly(vinylidene difluoride-co-methyl vinyl ether), polystyrene, poly(p-methoxystyrene), poly(vinylidene difluoride), poly(vinyl acetate), poly(vinyl propionate), poly(methoxy acetate), poly(n-propyl methacrylate), poly(isopropyl methacrylate), poly(n-pentyl methacrylate), poly(vinylidene difluoride-co-ethyl vinyl ether), poly(vinylidene difluoride-co-propyl vinyl ether), poly(dimethylaminoethyl methacrylate), poly(dimethylaminopropyl methacrylate), poly(aminopropyl methacrylate), poly(diethylaminoethyl methacrylate), and blends including two or more of the foregoing. 5. The method of claim 1, wherein the layer of the semiconductor is in direct contact with the layer of the second material. 6. The method of claim 1, wherein said layer of the semiconductor is in direct contact with both said layer of the first material and said layer of the second material. 7. A method of making a semiconductor apparatus, comprising the steps of: providing a substrate having a substrate surface; forming a layer of a first material overlying a first region of said substrate surface; forming a layer of a second material overlying a second region of said substrate surface; and forming a layer of a semiconductor overlying said layer of first material and overlying said layer of second material; a first region of said layer of semiconductor overlying said layer of first material and including crystal grains having a first average crystal grain size, a second region of said layer of semiconductor overlying said layer of second material and including crystal grains having a second average crystal grain size, said second average crystal grain size being substantially larger than said first average crystal grain size; wherein said layer of first material overlies said second region of said substrate surface. 8. The method of claim 7, wherein each of the first and second materials includes a polymer. 9. The method of claim 7, wherein said first material includes a member selected from the group consisting of: poly(para-vinyl phenol), poly(4-vinylpyridine), poly(2-vinylnaphthalene), poly(meta-vinyl phenol), poly(ortho-vinyl phenol), poly(para-vinyl phenol)-co-2-hydroxyethylmethacrylate, poly(2-vinylpyridine), poly(2-vinylnaphthalene-co-2-ethylhexyl acrylate, poly(1-vinylnaphthalene), and blends including two or more of the foregoing. 10. The method of claim 7, wherein said second material includes a member selected from the group consisting of: poly(n-butyl methacrylate), poly(vinylidene difluoride-co-methyl vinyl ether), polystyrene, poly(p-methoxystyrene), poly(vinylidene difluoride), poly(vinyl acetate), poly(vinyl propionate), poly(methoxy acetate), poly(n-propyl methacrylate), poly(isopropyl methacrylate), poly(n-pentyl methacrylate), poly(vinylidene difluoride-co-ethyl vinyl ether), poly(vinylidene difluoride-co-propyl vinyl ether), poly(dimethylaminoethyl methacrylate), poly(dimethylaminopropyl methacrylate), poly(aminopropyl methacrylate), poly(diethylaminoethyl methacrylate), and blends including two or more of the foregoing. 11. The method of claim 7, wherein the layer of the semiconductor is in direct contact with the layer of the second material. 12. The method of claim 7, wherein said layer of the semiconductor is in direct contact with both said layer of the first material and said layer of the second material. 13. The method of claim 7, wherein said layer of second material is between said layer of semiconductor and said layer of first material.