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Silicon-on-insulator chip with multiple crystal orientations

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 UP-0050692 (2008-03-18)
등록번호 US-7704809 (2010-05-20)
발명자 / 주소
  • Yeo, Yee-Chia
  • Yang, Fu-Liang
출원인 / 주소
  • Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소
    Slater & Matsil, L.L.P.
인용정보 피인용 횟수 : 3  인용 특허 : 72

초록

A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a second silicon island with a surface of a second crystal orientation also overlies the insulator layer.

대표청구항

What is claimed is: 1. A method of forming a semiconductor chip, the method comprising: masking a first region of a first silicon layer, the first silicon layer being formed on a dielectric layer as part of a silicon-on-insulator (SOI) substrate, and the first silicon layer having a first crystal o

이 특허에 인용된 특허 (72)

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이 특허를 인용한 특허 (3)

  1. Doris, Bruce B.; Edge, Lisa F.; Hashemi, Pouya; Reznicek, Alexander, Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same.
  2. McKay, Roger A.; Sadik, Patrick W., Island etched filter passages.
  3. McKay, Roger A.; Sadik, Patrick W., Nonparallel island etching.
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