IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
UP-0425406
(2006-06-21)
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등록번호 |
US-7713640
(2010-06-03)
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발명자
/ 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
5 인용 특허 :
13 |
초록
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This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yie
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
대표청구항
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What is claimed is: 1. A functional laminate structure, comprising: a substrate having a surface; a crystalline metal-nonmetal layer, comprising a metal and a nonmetal; and a first crystalline metal-oxide layer, comprising a metal constituent, wherein the metal-nonmetal layer is selected from the g
What is claimed is: 1. A functional laminate structure, comprising: a substrate having a surface; a crystalline metal-nonmetal layer, comprising a metal and a nonmetal; and a first crystalline metal-oxide layer, comprising a metal constituent, wherein the metal-nonmetal layer is selected from the group consisting of AX0.3, AX, AX2, AX3, and compounds consisting of combinations of said materials, the first metal-oxide layer is topotactic with said metal-nonmetal layer; wherein the metal-nonmetal layer is located between the surface and the metal-oxide layer and X comprises a member from the group consisting of H, C, OH, F, P, S, Cl, Se, Br, Te, and combinations thereof. 2. The structure of claim 1, wherein the surface is substantially silicon. 3. The structure of claim 1, wherein the metal-nonmetal layer has a first lattice parameter and the first metal-oxide layer has a second lattice parameter wherein the relative difference between the first and second lattice parameters is less than approximately 5% for minimizing defects. 4. The structure of claim 1, wherein the first metal-oxide layer is substantially free of mosaic spread. 5. The structure of claim 1, wherein the metal constituents of the metal-oxide layer are those of the metal-nonmetal layer. 6. The structure of claim 1, wherein X comprises a member from the group consisting of H, C, F, S, Cl, Se, Br, Te, and combinations thereof. 7. The structure of claim 1, wherein X comprises at least two members from the group consisting of N, F and S. 8. The structure of claim 1, wherein X comprises a combination of at least two elements from the group consisting of H, C, N, F, S, Cl, Se, Br and Te. 9. The structure of claim 1, wherein A is selected from the group consisting of the lanthanide elements (Ln): Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and combinations, alloys, and doped substituents thereof. 10. The structure of claim 9, wherein X comprises between 0 and 80% oxygen. 11. The structure of claim 9, wherein the metal constituents of the metal-nonmetal layer are not those of the first metal-oxide layer. 12. The structure of claim 9, wherein a second metal-oxide layer is formed epitaxially over said first metal-oxide layer. 13. The structure of claim 9, wherein the first metal-oxide layer comprises a metal-oxide, the metal-oxide is selected from the group consisting of AO, A2O3 and AO2, doped substituents thereof, and oxygen deficient versions thereof. 14. The structure of claim 9, wherein the first metal-oxide layer is selected from the group consisting of: Ln2Tr2O7, LnTrO4, (Ln,Tr)2O3, (Ln,Tr)O2, (Ln,Tr)O2-d, and compounds consisting of combinations of said materials, wherein d=0 to 0.5, Tr represents a transition metal, LN represents a lanthanide element and fractions of Ln and Tr may be any values summing to one. 15. The structure of claim 9, wherein the metal-nonmetal layer is less than two nanometers in thickness. 16. The structure of claim 9, wherein the interface between the metal-nonmetal layer and the first metal-oxide layer is diffuse. 17. The structure of claim 9, wherein the interface between the metal-nonmetal layer and the first metal-oxide layer is diffuse, such that only a compositional gradient of nonmetal constituent concentrations exists through the thickness of the structure. 18. The structure of claim 9, wherein the surface is substantially monocrystalline. 19. The structure of claim 9, wherein the surface is substantially biaxially textured or fiber textured. 20. The structure of claim 9, further comprising at least one functional electromagnetic layer. 21. The structure of claim 9, further comprising an epitaxial oxide layer. 22. The structure of claim 9, wherein X comprises at least two of the group consisting of N, F, O, S, and combinations thereof. 23. The structure of claim 9, wherein the first metal-oxide layer is epitaxial with the surface. 24. A laminate structure for use as a precursor film to a topotactic oxide structure, comprising: a substrate having a surface; a crystalline metal-nonmetal layer, comprising a metal and a nonmetal, wherein the metal-nonmetal is selected from the group consisting of AX0.3, AX, AX2, AX3, and compounds consisting of combinations of said materials; and A is selected from the group consisting of the lanthanide elements: Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and combinations, alloys, and doped substituents thereof; and X comprises a member from the group consisting of H, C, P, S, Cl, Se, Br, Te, and combinations thereof; wherein the metal-nonmetal layer is epitaxial with the surface. 25. The structure of claim 24, wherein X further comprises the element F. 26. The structure of claim 24, wherein X comprises at least two of the group of elements consisting of: N, F, O, and S. 27. The structure of claim 24, wherein X comprises between 0 and 80% oxygen. 28. The structure of claim 24, wherein the surface comprises a (001) silicon surface. 29. The structure of claim 24 wherein X comprises Te. 30. The structure of claim 24 wherein X comprises a member from the group consisting of Te and Se and a member from the group consisting of S, O, and F. 31. The structure of claim 24 wherein A comprises Sc and X further comprises N. 32. The structure of claim 24 further comprising an electromagnetic device layer. 33. The structure of claim 24, wherein X comprises a member from the group consisting of H, C, S, Cl, Se, Br, Te, and combinations thereof. 34. The structure of claim 24, wherein X comprises at least two members from the group consisting of N, F, and S. 35. The structure of claim 24, wherein X comprises a combination of at least two elements from the group consisting of H, C, N, F, S, Cl, Se, Br and Te. 36. A functional laminate structure, comprising: a substrate having a surface, the surface being substantially a (001) silicon surface; and a crystalline metal-oxide layer; wherein the metal-oxide is selected from the group consisting of A2O3 and AO2, and A comprises a member selected from the group consisting of the lanthanide elements: Sc, Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and combinations, alloys, and doped substituents thereof, and wherein the metal-oxide layer is epitaxial to the silicon surface and has a (001) orientation. 37. The structure of claim 36, wherein the metal-oxide layer is part of an electromagnetic device. 38. The structure of claim 36, wherein the metal-oxide layer is part of a field effect transistor. 39. The structure of claim 36, wherein the metal-oxide layer functions as a gate dielectric oxide. 40. The structure of claim 36, wherein the metal-oxide layer is an epitaxial buffer layer. 41. The structure of claim 36, wherein the metal-oxide layer is ultra thin. 42. The structure of claim 36, wherein the metal-oxide layer has a fluorite, bixbyite or fluorite-derived structure. 43. The structure of claim 36, wherein the metal-oxide layer is directly on the surface. 44. The structure of claim 36, wherein the metal-oxide layer is substantially free of mosaic spread. 45. The structure of claim 36, wherein A comprises a member from the group consisting of Sc, Pr, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and combinations, alloys, and doped substituents thereof. 46. The structure of claim 36, further comprising a functional device layer deposited on the metal-oxide layer. 47. The structure of claim 46, wherein the functional device layer is epitaxial and has a wurtzite structure. 48. The structure of claim 46, wherein the functional device layer is a ferroelectric oxide material. 49. The structure of claim 46, wherein the functional device layer is an epitaxial oxide material. 50. A functional laminate structure, comprising: a substrate having a surface, the surface being substantially a (001) silicon surface; and a crystalline metal-oxide layer; wherein the metal-oxide is selected from the group consisting of AO, A2O3 and AO2, and A comprises a member selected from the group consisting of the lanthanide elements: Sc, Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and combinations, alloys, and doped substituents thereof, and wherein the metal-oxide layer is epitaxial to the silicon surface and has a (001) orientation. 51. The structure of claim 50, wherein the metal-oxide is selected from the group consisting of AO and A2O3. 52. A functional laminate structure, comprising: a substrate having a surface, the surface being substantially a (001) silicon surface; and a crystalline metal-oxide layer; wherein the metal-oxide is selected from the group consisting of AO, A2O3 and AO2, and A comprises a member selected from the group consisting of the lanthanide elements: Sc, Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and combinations, alloys, and doped substituents thereof, and wherein the metal-oxide layer is epitaxial to the silicon surface and has a (001) orientation and the metal-oxide layer is directly on the surface.
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