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Gas baffle and distributor for semiconductor processing chamber 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/455
  • C23F-001/00
  • H01L-021/306
  • C23C-016/06
  • C23C-016/22
출원번호 UP-0075527 (2005-03-07)
등록번호 US-7722719 (2010-06-14)
발명자 / 주소
  • Lei, Lawrence Chung-Lai
  • Lu, Siqing
  • Gianoulakis, Steven E.
  • Bang, Won B.
  • Sun, David P.
  • Wang, Yen-Kun Victor
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Townsend and Townsend and Crew
인용정보 피인용 횟수 : 6  인용 특허 : 38

초록

Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting

대표청구항

What is claimed is: 1. A gas distributor for use in a processing chamber, the gas distributor comprising: a body having a threaded section configured to be coupled with a gas supply, the body also having a distal face and a central section extending between the threaded section and the distal face,

이 특허에 인용된 특허 (38)

  1. Doan,Kenny L.; Kim,Yunsang; Dahimene,Mahmoud; Liu,Jingbao; Pu,Bryan; Shan,Hongqing; Curry,Don, Apparatus for uniformly etching a dielectric layer.
  2. Swars, Helmut, Catalytic converter substrate.
  3. Masahiro Nakahara JP; Yumiko Itoh JP, Ceramic member resistant to halogen-plasma corrosion.
  4. Li Shijian ; Wang Yaxin ; Redeker Fred C. ; Ishikawa Tetsuya ; Collins Alan W., Deposition chamber and method for depositing low dielectric constant films.
  5. Li, Shijian; Wang, Yaxin; Redeker, Fred C.; Ishikawa, Tetsuya; Collins, Alan W., Deposition chamber and method for depositing low dielectric constant films.
  6. Shijian Li ; Yaxin Wang ; Fred C. Redeker ; Tetsuya Ishikawa ; Alan W. Collins, Deposition chamber and method for depositing low dielectric constant films.
  7. Li Shijian ; Redeker Fred C. ; Ishikawa Tetsuya, Deposition chamber for improved deposition thickness uniformity.
  8. Laxman Murugesh ; Padmanaban Krishnaraj ; Michael Cox ; Canfeng Lai ; Narendra Dubey ; Tom K. Cho ; Sudhir Ram Gondhalekar ; Lily L. Pang, Directing a flow of gas in a substrate processing chamber.
  9. Umotoy Salvador ; Ku Vincent ; Yuan Xiaoxiong ; Lei Lawrence Chung-Lai, Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces.
  10. Cho Tom (San Francisco CA) Ngai Christopher (Burlingame CA), Exhaust baffle for uniform gas flow pattern.
  11. Shinriki, Hiroshi; Matsumoto, Kenji, Film deposition apparatus and method.
  12. Michael Kwan ; Eric Liu, Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD.
  13. Ishikawa Tetsuya ; Krishnaraj Padmanabhan ; Gao Feng ; Collins Alan W. ; Pang Lily, Gas distribution system for a CVD processing chamber.
  14. McMillin Brian ; Nguyen Huong ; Barnes Michael ; Ni Tom, Gas injection system for plasma processing.
  15. Young Lydia J. ; Matthiesen Richard H. ; Selitser Simon ; Os Ron van, Gas injection system for semiconductor processing.
  16. Strauch,Gerd; Kaeppeler,Johannes; Dauelsberg,Martin, Gas-admission element for CVD processes, and device.
  17. Nowak Romuald ; Fairbairn Kevin ; Redeker Fred C., High density plasma CVD reactor with combined inductive and capacitive coupling.
  18. Tan, Zhengquan; Li, Dongqing; Zygmunt, Walter; Ishikawa, Tetsuya, Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD.
  19. Robles Stuardo, Method and apparatus for depositing a multilayered low dielectric constant film.
  20. Malin John D. (Reading GBX) Porucznik Paul (Kennington GBX), Method and apparatus for metering and dispensing volatile liquids.
  21. Strauch, Gerd; Reinhold, Markus, Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method.
  22. Shimogaki,Yukihiro; Kawano,Yumiko, Method of forming an oxidation-resistant TiSiN film.
  23. Hanawa Hiroji ; Ishikawa Tetsuya ; Wong Manus ; Li Shijian ; Niazi Kaveh ; Smyth Kenneth ; Redeker Fred C. ; Detrick Troy ; Pinson ; II Jay Dee, Multi-zone RF inductively coupled source configuration.
  24. DeMent,R. Bruce; Werstler,Paul, Nozzle for use in rotational casting apparatus.
  25. Deaton Paul L. (Sunnyvale CA) Riley Norma (Pleasanton CA) Rinnovatore James V. (Nazareth PA), Particulate reduction baffle with wafer catcher for chemical-vapor-deposition apparatus.
  26. Yuasa, Mitsuhiro; Homma, Koji, Plasma processing apparatus.
  27. Voll Manfred (Greifenhagenstrasse 11 6450 Hanau 9 DEX) Rothbhr Lothar (Volkerstrasse 10 503 Hermlheim DEX) Khner Gerhard (Liesingstrasse 1 6450 Hanau 9 DEX), Process and apparatus for the production of carbon black.
  28. Kholodenko, Arnold V.; Katz, Dan; Cheng, Wing L., Process chamber having multiple gas distributors and method.
  29. Basceri, Cem; Sandhu, Gurtej S., Reactors having gas distributors and methods for depositing materials onto micro-device workpieces.
  30. Liang,Qiwei; Lu,Siqing, Self-cooling gas delivery apparatus under high vacuum for high density plasma applications.
  31. Orczyk Maciek ; Murugesh Laxman ; Narwankar Pravin, Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing.
  32. Adomaitis, Raymond A.; Kidder, Jr., John N.; Rubloff, Gary W., Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation.
  33. Redeker Fred C. ; Moghadam Farhad ; Hanawa Hiroji ; Ishikawa Tetsuya ; Maydan Dan ; Li Shijian ; Lue Brian ; Steger Robert J. ; Wong Manus ; Wong Yaxin ; Sinha Ashok K., Symmetric tunable inductively coupled HDP-CVD reactor.
  34. Chang-Jae Kim KR, Temperature controllable gas distributor.
  35. Sasaki, Koji; Narui, Hironobu; Yanashima, Katsunori; Memezawa, Akihiko, Thin film-forming apparatus.
  36. Tue Nguyen, Three-dimensional showerhead apparatus.
  37. Murugesh Laxman, Unique baffle to deflect remote plasma clean gases.
  38. Rasheed,Muhammad M.; Kim,Steven H, Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas.

이 특허를 인용한 특허 (6)

  1. Begarney, Michael J.; Campanale, Frank J., Chemical vapor deposition reactor.
  2. Nangoy, Roy C.; Singh, Saravjeet; Farr, Jon C.; Pamarthy, Sharma V.; Kumar, Ajay, Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor.
  3. Nangoy, Roy C.; Singh, Saravjeet; Farr, Jon C.; Pamarthy, Sharma V.; Kumar, Ajay, Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor.
  4. Rozenzon, Yan; Tantiwong, Kyle; Yousif, Imad; Knyazik, Vladimir; Keating, Bojenna; Banna, Samer, Multi-zone gas injection assembly with azimuthal and radial distribution control.
  5. Huang, Guo-Shing; Lin, Tung-Ying; Chang, Chun-Hao; Wang, Herrison; Wabg, Teng-Yen, Plasma assisted apparatus for organic film deposition.
  6. Faguet, Jacques; Lee, Eric M., Vapor deposition system.
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