초록 ▼

The present invention provides an indium-doped Co4Sb12 skutterudite composition in which some Co on the cubic lattice structure may be replaced with one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; some Sb on the planar rings may be replaced by one or more members of the

The present invention provides an indium-doped Co4Sb12 skutterudite composition in which some Co on the cubic lattice structure may be replaced with one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; some Sb on the planar rings may be replaced by one or more members of the group consisting of Si, Ga, Ge and Sn; and a second dopant atom is selected from a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The composition is useful as a thermoelectric material. In preferred embodiments, the composition has a figure of merit greater than 1.0. The present invention also provides a process for the production of the composition, and thermoelectric devices using the composition.

대표청구항 ▼

What is claimed is: 1. A cooling device comprising at least two heat transfer plates, a composition disposed between the heat transfer plates, a p-type thermoelectric material disposed between the heat transfer plates, a heat sink, and a power source connected to the composition and to the p-type t

What is claimed is: 1. A cooling device comprising at least two heat transfer plates, a composition disposed between the heat transfer plates, a p-type thermoelectric material disposed between the heat transfer plates, a heat sink, and a power source connected to the composition and to the p-type thermoelectric material; wherein the composition has a skutterudite cubic lattice structure and is described by the formula Co4-mAmSb12-nXnInxMy, where A is selected from one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is selected from one or more members of the group consisting of Si, Ga, Ge and Sn; M is selected from one or more members of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; 0≦m≦1; 0≦n≦9; 0<x<1; 0<y<1; and 0<x+y≦1. 2. A device according to clam 1 wherein the composition is comprised of a purality of cubic unit cells, wherein (a) the cubic lattice of a first cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the first cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the first cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the first cubic unit cell is comprised of In; and (e) an eighth subcell in the first cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 3. A device according to claim 2 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of In; and (e) an eighth subcell in the second cubic unit cell is comprised of a different member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu than the eighth subcell in the first cubic unit cell. 4. A device according to claim 2 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of In; and (e) an eighth subcell in the second cubic unit cell is comprised of In. 5. A device according to claim 2 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and (e) an eighth subcell in the second cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 6. A device according to claim 5 wherein the seventh and eighth subcells of the second cubic unit cell are comprised of the same member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 7. A device according to claim 5 wherein the seventh and eighth subcells of the second cubic unit cell are comprised of different members of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 8. A device according to claim 2 wherein the cubic lattice of the first cubic unit cell is comprised of Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt. 9. A device according to claim 2 wherein six subcells in the first cubic unit cell are comprised of 4-member planar rings comprised of Sb and one or more members of the group consisting of Si, Ga, Ge and Sn. 10. A device according to claim 2 wherein an eighth subcell in the first cubic unit cell is comprised of a member of the group consisting of Sc, La, Ce, Yb, Nd, Pd and Y. 11. A device according to claim 1 which comprises a plurality of elements fabricated from the composition, and a plurality of elements fabricated from a p-type thermoelectric material, wherein the elements are arranged in an alternating configuration, and are electrically coupled in series and are thermally coupled in parallel. 12. A heating device comprising at least two heat transfer plates, a composition disposed between the heat transfer plates, a p-type thermoelectric material disposed between the heat transfer plated, and a power source connected to the composition and to the p-type thermoelectric material; wherein the composition has a skutterudite cubic lattice structure and is described by the formula Co4-mAmSb12-nXnInxMy, where A is selected from one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is selected from one or more members of the group consisting of Si, Ga, Ge and Sn; M is selected from one or more members of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu 0≦m≦1; 0≦n≦9; 0<x<1; 0<y<1; and 0<x+y≦1. 13. A device according to claim 12 wherein the composition is comprised of a plurality of cubic unit cells, wherein (a) the cubic lattice of a first cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the first cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the first cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the first cubic unit cell is comprised of In; and (e) an eighth subcell in the first cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 14. A device according to claim 13 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of In; and (e) an eighth subcell in the second cubic unit cell is comprised of a different member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu than the eighth subcell in the first cubic unit cell. 15. A device according to claim 13 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of In; and (e) an eighth subcell in the second cubic unit cell is comprised of In. 16. A device according to claim 13 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and (e) an eighth subcell in the second cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 17. A device according to claim 16 wherein the seventh and eighth subcells of the second cubic unit cell are comprised of the same member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 18. A device according to claim 16 wherein the seventh and eighth subcells of the second cubic unit cell are comprised of different members of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 19. A device according to claim 13 wherein the cubic lattice of the first cubic unit cell is comprised of Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt. 20. A device according to claim 13 wherein six subcells in the first cubic unit cell are comprised of 4-member planar rings comprised of Sb and one or more members of the group consisting of Si, Ga, Ge and Sn. 21. A device according to claim 13 wherein an eighth subcell in the first cubic unit cell is comprised of a member of the group consisting of Sc, La, Ce, Yb, Nd, Pd and Y. 22. A device according to claim 12 which comprises a plurality of elements fabricated from the composition, and a plurality of elements fabricated from a p-type thermoelectric material, wherein the elements are arranged in an alternating configuration, and are electrically coupled in series and are thermally coupled in parallel. 23. A power generation device comprising at least two heat transfer plates, a composition disposed between the heat transfer plates, a p-type thermoelectric material disposed between the heat transfer plates, and electrical conductors connected to the composition and to the p-type thermoelectric material, wherein a first heat transfer plate is exposed to a first temperature, and a second heat transfer plate is exposed to a second temperature that is different from the first temperature; wherein the composition has skutterudite cubic lattice structure and is described by the formula Co4-mAmSb12-nXnInxMy, where A is selected from one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is selected from one or more members of the group consisting of Si, Ga, Ge and Sn; M is selected from one or more members of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; 0≦m≦1; 0≦n≦9; 0<x<1; 0<y<1; and 0<x+y≦1. 24. A device according to claim 23 wherein the composition is comprised of a purality of cubic unit cells, wherein (a) the cubic lattice of a first cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the first cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the first cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the first cubic unit cell is comprised of In; and (e) an eighth subcell in the first cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 25. A device according to claim 24 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of In; and (e) an eighth subcell in the second cubic unit cell is comprised of a different member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu than the eighth subcell in the first cubic unit cell. 26. A device according to claim 24 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of In; and (e) an eighth subcell in the second cubic unit cell is comprised of In. 27. A device according to claim 24 wherein the composition has a second cubic unit cell, wherein (a) the cubic lattice of the second cubic unit cell is comprised of Co, or Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; (b) the second cubic unit cell is comprised of atomic crystallograhphic sites arranged in eight subcells; (c) six subcells in the second cubic unit cell are comprised of Sb, or Sb and one or more members of the group consisting of Si, Ga, Ge and Sn; (d) a seventh subcell in the second cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and (e) an eighth subcell in the second cubic unit cell is comprised of a member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 28. A device according to claim 27 wherein the seventh and eighth subcells of the second cubic unit cell are comprised of the same member of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 29. A device according to claim 27 wherein the seventh and eighth subcells of the second cubic unit cell are comprised of different members of the group consisting of Ca, Sc, Zn, Sr, Y, Pd, Ag, Cd, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. 30. A device according to claim 24 wherein the cubic lattice of the first cubic unit cell is comprised of Co and one or more members of the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt. 31. A device according to claim 24 wherein six subcells in the first cubic unit cell are comprised of 4-member planar rings comprised of Sb and one or more members of the group consisting of Si, Ga, Ge and Sn. 32. A device according to claim 24 wherein an eighth subcell in the first cubic unit cell is comprised of a member of the group consisting of Sc, La, Ce, Yb, Nd, Pd and Y. 33. A device according to claim 23 which comprises a plurality of elements fabricated from the composition, and a plurality of elements fabricated from a p-type thermoelectric material, wherein the elements are arranged in an alternating configuration, and are electrically coupled in series and are thermally coupled in parallel.