초록

One embodiment of an electronic component packaging system includes a base adapted for supporting an electronic component, a lid sealed to the base, the lid including a fillport, and the fillport hermetically sealed by light irradiation.

대표청구항 ▼

We claim: 1. An electronic component packaging system, comprising: a base adapted for supporting an electronic component; and a lid sealed to said base, said lid including a fillport; and a seal material positioned within and hermetically sealing said fillport, said seal material manufactured of a

We claim: 1. An electronic component packaging system, comprising: a base adapted for supporting an electronic component; and a lid sealed to said base, said lid including a fillport; and a seal material positioned within and hermetically sealing said fillport, said seal material manufactured of a non-conductive material that deforms when irradiated with light, wherein the seal material comprises a plurality of spheres before deformation, and wherein following deformation the plurality of spheres are melted one to another and to the fillport to hermetically seal the fillport. 2. The system of claim 1, wherein said seal material having a coefficient of thermal expansion substantially the same as a coefficient of thermal expansion of said lid. 3. The system of claim 1 wherein said fillport defines a tapered recess that receives the plurality of spheres, and wherein a diameter of at least one sphere of the plurality is greater than a smallest width of said tapered recess. 4. The system of claim 1 wherein said light irradiation comprises light directed to trace around a line of contact between at least one of the spheres and the fillport to melt said sphere along said line of contact to said fillport. 5. The system of claim 2 wherein said lid and said seal material are both chosen from one of ceramic and glass. 6. The system of claim 1 wherein said packaging system is filled with a fluid through said fillport prior to sealing of said fillport. 7. The system of claim 1 wherein said light irradiation comprises one of light from a carbon dioxide laser having a wavelength in a range of 9.0 to 11.0 microns, a light from a Nd:YAG laser having a wavelength of substantially 1064 nm, and a semiconductor laser having a wavelength range of 800 to 950 nm. 8. The system of claim 1 wherein said light irradiation produces heat localized at said fillport. 9. The system of claim 1 wherein at least one sphere of the plurality includes a coating of material adapted to facilitate melting thereof when subjected to said light irradiation. 10. The system of claim 1 wherein at least one sphere of the plurality includes an additive adapted to facilitate melting of said sphere when subjected to said light irradiation. 11. A method of sealing a fillport in a microelectronic package, comprising: placing a non-conductive sealing material at a fillport of a microelectronic package cover; and irradiating said seal material with light to deform said material so as to form a hermetic seal of said fillport, wherein said sealing material comprises a plurality of spheres positioned within said fillport, and wherein said irradiating comprises directing a laser over said plurality of spheres to weld said spheres to one another and to said fillport. 12. The method of claim 11 wherein said sealing material further comprises a plate positioned over said fillport and wherein said irradiating further comprises directing a laser around an edge of said plate to weld said edge to said cover. 13. The method of claim 11 wherein said sealing material and said cover are each chosen from one of glass, ceramic and metal. 14. The method of claim 11 wherein said irradiation comprises one of light from a carbon dioxide laser having a wavelength in a range of 9.0 to 11.0 microns, a light from a Nd:YAG laser having a wavelength of substantially 1064 nm, and a semiconductor laser having a wavelength range of 800 to 950 nm. 15. The method of claim 11 wherein said seal material has a coefficient of thermal expansion substantially the same as a coefficient of thermal expansion of said cover. 16. The method of claim 11 further comprising, prior to irradiating, flowing a fluid through said fillport into an interior of said package. 17. A method of sealing a semiconductor component package, comprising: placing a plurality of non-conductive spheres in a recess of a cover of a semiconductor component package; and welding the spheres to one another and to the recess to define a hermetic seal between the spheres and the recess. 18. The method of claim 17 wherein said welding comprises focused light irradiation. 19. The method of claim 18 wherein said irradiation comprises one of focused light from a carbon dioxide laser having a wavelength in a range of 9.0 to 11.0 microns, a focused light from a Nd:YAG laser having a wavelength of substantially 1064 nm, and a semiconductor laser having a wavelength range of 800 to 950 nm. 20. The method of claim 17 wherein said recess defines a tapered recess and wherein said at least one sphere of the plurality defines a diameter greater than a smallest width of said tapered recess. 21. The method of claim 17 wherein the plurality of spheres has a coefficient of thermal expansion substantially the same as a coefficient of thermal expansion of said cover. 22. An electronic component packaging system, comprising: base means for supporting an electronic component; and lid means for sealing said base, said lid means including means for filling and means for hermetically sealing positioned within said means for filling, said means for hermetically sealing manufactured of a non-conductive material that deforms when irradiated with light, wherein the non-conductive material comprises a plurality of spheres that when irradiated the spheres deform and melt to one another and to the means for filling to form a hermetic seal. 23. The system of claim 22 wherein said light irradiation is chosen from one of focused light from a carbon dioxide laser having a wavelength in a range of 9.0 to 11.0 microns, a focused light from a Nd:YAG laser having a wavelength of substantially 1064 nm, and a semiconductor laser having a wavelength range of 800 to 950 nm. 24. The system of claim 22 wherein said means for filling comprises a tapered recess that narrows in a lower section of said recess, and wherein said means for hermetically sealing comprises at least one sphere of the plurality having a diameter greater than a width of said lower section of said recess.